MMBD1201 / 1202 / 1203 / 1204 / 1205 — Small Signal Diodes
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 1
August 2011
MMBD1201 / 1202 / 1203 / 1204 / 1205
Small Signal Diodes
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 100 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond 1.0
2.0 A
A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junct ion Temperature 150 °C
Symbol Parameter Value Units
PDPower Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
MARKING
MMBD1201 24 MMBD1202 25
MMBD1203 26 MMBD1204 27
SOT-23
1
2
324
3
2
1
MMBD1205 28
1201 1202
1203 1204
1
3
21
2
2
3
3
3
1
2NC
1205
2
3
1
1NC
Connection Diagram
MMBD1201 / 1202 / 1203 / 1204 / 1205 — Small Signal Diodes
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 2
Electrical Characteristics TA = 25°C unless otherwise noted
Typical Performance Characteristics
Symbol Parameter Test Conditions Min. Max. Units
VRBreakdown Voltage IR = 100μA100 V
VFForward Voltage IF = 1.0mA
IF = 10mA
IF = 100mA
IF = 200mA
IF = 300mA
550
660
820
0.87
-
600
740
920
1.0
1.1
mV
mV
mV
V
V
IRReverse Leakage VR = 20V
VR = 50V
VR = 50V, TA = 150°C
25
50
5.0
nA
nA
μA
CTTotal Capacitance VR = 0, f = 1.0MHz 2.0 pF
trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA
RL = 100Ω
4.0 ns
110
120
130
140
150
1 2 3 5 10 2 0 30 5 0 1 0 0
Ta= 25 C
Reverse Voltage, V
R [V]
Rev e rs e Cu rre n t, IR [u A ] 0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R [nA]
Reverse Volta
g
e, V
R
[
V
]
250
300
350
400
450
1 2 3 5 10 20 3 0 5 0 100
Ta= 25 C
Forward V oltage, V
F [mV ]
Forward C u rrent, IF [uA]
450
500
550
600
650
700
0. 1 0.2 0.3 0. 5 1 2 3 5 10
Ta= 25 C
Forw ard V oltage, V
F
[m V ]
Fo rward Current, IF [m A ]
Figure 1. Reverse V oltage vs Reverse Current
BV - 1.0 to 100uA Figure 2. Reverse Current vs Reverse V oltage
IR - 10 to 100 V
Figure 3. Forward V oltage vs Forward Current
VF - 1.0 to 100 uA Figure 4. Forward V oltage vs Forward Current
VF - 0.1 to 10 mA
°°
°
°
MMBD1201 / 1202 / 1203 / 1204 / 1205 — Small Signal Diodes
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 3
Typical Performance Characteristics (Continued)
0.6
0.8
1.0
1.2
1.4
10 2 0 30 5 0 1 00 200 3 00 5 00
Ta= 25 C
Forw ard Voltage, V
F
[V ]
Forw ard Current, I
F
[mA ] 0 2 4 6 8 10 12 14
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse Voltage [V]
Figure 5. Forward V oltage vs Forward Current
VF - 10 - 800 mA Figure 6. Total Capacitance vs Reverse V oltage
°°
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [nS]
Reverse Current [mA]
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE R ECT IF IED CURRENT - mA
C u rrent [mA]
Am b ient Temperature, TA [ C]
0 50 100 150 200
0
100
200
300
400
500
DO-35 Pkg
SOT-23 Pkg
Power Dissipation, P
D
[m W]
Average T em perature, IO [ C]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
Figure 9. Power Derating Curve
°
°
°
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I56
