4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2
January 2009
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
■
UL recognized (File # E90700, Volume 2)
■
VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon pho-
totransistor in a 6-pin dual in-line package.
Schematic Package Outlines
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3NC
5
6
4
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 2
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
Storage Temperature -40 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
SOL
Wave solder temperature (see page 8 for reflow solder profile) 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250 mW
2.94
EMITTER
I
F
DC/Average Forward Input Current 60 mA
V
R
Reverse Input Voltage 6 V
I
F
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
120 mW
1.41 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 70 V
V
ECO
Emitter-Collector Voltage 7 V
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150 mW
1.76 mW/°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10mA 1.18 1.50 V
I
R
Reverse Leakage Current V
R
= 6.0V 0.001 10 µA
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0 30 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
F
= 0 70 120 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, I
F
= 0 7 10 V
I
CEO
Collector-Emitter Dark Current V
CE
= 10V, I
F
= 0 1 50 nA
I
CBO
Collector-Base Dark Current V
CB
= 10V 20 nA
C
CE
Capacitance V
CE
= 0V, f = 1 MHz 8 pF
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
C
ISO
Isolation Capacitance V
I-O
= &, f = 1MHz 0.2 2 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 3
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
* Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio,
Collector to Emitter
I
F
= 10mA, V
CE
= 10V 4N35M, 4N36M,
4N37M
100 %
H11A1M 50
H11A5M 30
4N25M, 4N26M
H11A2M, H11A3M
20
4N27M, 4N28M
H11A4M
10
I
F
= 10mA, V
CE
= 10V,
T
A
= -55°C
4N35M, 4N36M,
4N37M
40
I
F
= 10mA, V
CE
= 10V,
T
A
= +100°C
4N35M, 4N36M,
4N37M
40
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 50mA 4N25M, 4N26M,
4N27M, 4N28M,
0.5 V
I
C
= 0.5mA, I
F
= 10mA 4N35M, 4N36M,
4N37M
0.3
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
0.4
AC CHARACTERISTICS
T
ON
Non-Saturated
Tu r n-on Time
I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
2µs
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N35M, 4N36M,
4N37M
210µs
T
OFF
Tu r n-off Time I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
2µs
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N35M, 4N36M,
4N37M
210
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 4
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
IF - FORWARD CURRENT (mA)
02468101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0V
TA = 25°CNormalized to
IF = 10 mA
Fig. 3 Normalized CTR vs. Ambient Temperature
TA - AMBIENT TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to
IF = 10 mA
TA = 25°C
IF - LED FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Fig. 5 CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (k Ω)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE= 0.3 V
Fig. 4 CTR vs. RBE (Unsaturated)
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5 mA
IF = 20 mA
IF = 10 mA
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IF = 2.5 mA
TA = 25˚C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 5
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
NORMALIZED ton - (ton(R
BE
) / ton(open))
Fig. 8 Normalized t
on
vs. R
BE
RBE- BASE RESISTANCE (k Ω)
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CC = 10 V
IC = 2 mA
RL = 100 Ω
SWITCHING SPEED - (µs)
Fig. 7 Switching Speed vs. Load Resistor
R-LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED toff - (toff(R
BE
) / toff(open))
10 100 1000 10000 100000
RBE- BASE RESISTANCE (k Ω)
Fig. 9 Normalized t
off
vs. R
BE
Fig. 10 Dark Current vs. Ambient Temperature
TA - AMBIENT TEMPERATURE
(°C)
020406080100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
VCE = 10 V
TA = 25°
C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
t
r
t
f
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
t
on
10%
90%
t
off
Figure 11. Switching Time Test Circuit and Waveforms
IC
Adjust I
F
to produce I
C
= 2 mA
Typical Performance Curves
(Continued)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 6
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 7
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option 4N25M Standard Through Hole Device
S 4N25SM Surface Mount Lead Bend
SR2 4N25SR2M Surface Mount; Tape and Reel
T 4N25TM 0.4" Lead Spacing
V 4N25VM VDE 0884
TV 4N25TVM VDE 0884, 0.4" Lead Spacing
SV 4N25SVM VDE 0884, Surface Mount
SR2V 4N25SR2VM VDE 0884, Surface Mount, Tape and Reel
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
4N25
V X YY Q
1
2
6
43 5
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 8
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Carrier Tape Specification
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 9
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The datasheet is for reference information only.
Rev. I38
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers