SCT3022KLHR
Automotive Grade N-channel SiC power MOSFET
ID
*1
67
A
Continuous Drain current
Tc = 100°C
Tc = 25°C
ID
*1
95
A
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
Gate - Source surge voltage (tsurge < 300nsec)
VGSS_surge
*3
-4 to +26
V
Recommended drive voltage
VGS_op
*4
0 / +18
V
Pulsed Drain current
ID,pulse
*2
237
A
Gate - Source voltage (DC)
VGSS
-4 to +22
V
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Unit
Drain - Source Voltage
VDSS
1200
V
Value
・Automobile
・Switch mode power supplies
Type
5) Easy to parallel
Tube
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lApplication
lInner circuit
lFeatures
1) Qualified to AEC-Q101
2) Low on-resistance
3) Fast switching speed
4) Fast reverse recovery
lOutline
VDSS
1200V
TO-247N
RDS(on) (Typ.)
22mΩ
ID
*1
95A
PD
427W
SCT3022KL
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
-
30
C11
lPackaging specifications
-
(1) Gate
(2) Drain
(3) Source
*Body Diode
(1)
(2)
(3)
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001 1/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
V
Ω
Gate input resistance
RG
f = 1MHz, open drain
-
4
-
mΩ
Tj = 25°C
-
22
28.6
Tj = 150°C
-
38
-
Static Drain - Source
on - state resistance
RDS(on)
*5
VGS = 18V, ID =
36A
nA
Gate - Source leakage current
IGSS-
VGS =
-4V
, VDS = 0V
-
-
Gate - Source leakage current
IGSS+
VGS =
+22V
, VDS = 0V
-
-100
nA
Gate threshold voltage
VGS (th)
VDS = 10V, ID =
18.2mA
2.7
-
5.6
-
1
10
Tj = 150°C
-
2
-
-
100
Zero Gate voltage
Drain current
IDSS
VGS = 0V, VDS
=1200V
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
μA
Tj = 25°C
V
Tj = 25°C
1200
-
-
Tj = -55°C
1200
-
-
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
lThermal resistance
lTypical Transient Thermal Characteristics
Value
Symbol
Unit
Rth1
Rth2
Value
Unit
1.23E-03
1.73E-02
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
0.27
0.35
°C/W
4.86E-02
K/W
Ws/K
Rth3
6.66E-03
1.14E-01
1.49E-01
Symbol
Cth1
Cth2
Cth3
PD
Tj Tc
Ta
Rth,n
Rth1
Cth1 Cth2 Cth,n
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 2/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
0V/+18V
VGS =
ID =
18A
400V
VDS =
RG =
0Ω
-
44
-
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 200pF
See Fig. 2-1, 2-2.
RG =
0Ω, L = 250μH
VDS =
600V
VGS=0V/18V, ID =
Turn - off delay time
td(off)
*5
-
67
μJ
Turn - off switching loss
Eoff
*5
-
243
-
Turn - on switching loss
Eon
*5
-
632
-
28
-
36A
RL =
22Ω
See Fig. 1-1, 1-2.
VGS = 0V
VDS =
0V to 600V
VDS = 10V, ID =
36A
VDS =
800V
pF
Turn - on delay time
td(on)
*5
-
29
-
ns
Rise time
Effective output capacitance,
energy related
Co(er)
-
213
-
-
Fall time
tf
*5
-
tr
*5
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
S
Input capacitance
Ciss
VGS = 0V
-
2879
-
pF
Output capacitance
Coss
Transconductance
gfs
*5
-
14.2
-
-
237
-
Reverse transfer capacitance
Crss
f = 1MHz
-
108
-
36A
ID =
VGS = 18V
Total Gate charge
Qg
*5
-
178
-
nC
Gate - Source charge
Qgs
*5
-
26
-
Gate - Drain charge
Qgd
*5
See Fig. 1-1.
-
97
-
VDS =
600V
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 3/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
*1 Limited by maximum temperature allowed.
*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
12
-
175
-
nC
A
*3 Example of acceptable VGS waveform
*2 PW 10μs, Duty cycle 1%
Peak reverse recovery current
Irrm
*5
-
Lσ = 50nH, Cσ = 200pF
See Fig. 3-1, 3-2.
Please note especially when using driver source that VGSS_surge must be in the range of
36A
IF =
600V
VR =
di/dt = 1100A/μs
Reverse recovery time
trr
*5
-
28
-
ns
Reverse recovery charge
Forward voltage
VSD
*5
-
3.2
-
Qrr
*5
-
VGS = 0V, ID
ISM *2
-
-
V
= 36A
Tc = 25°C
-
-
95
A
thermal runaway.
absolute maximum rating.
*5 Pulsed
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
237
A
Body diode continuous,
forward current
IS *1
Body diode direct current,
pulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 4/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Transient Thermal Resistance :
RthJC [K/W]
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Power Dissipation : PD [W]
Drain Current : ID [A]
Pulse Width : PW [s]
Case Temperature : TC [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
0
50
100
150
200
250
300
350
400
450
25 75 125 175
0.0001
0.001
0.01
0.1
1
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1
Ta = 25ºC
Single Pulse
0.1
1
10
100
1000
0.1 1 10 100 1000 10000
Operation in this area is limited by RDS(on)
PW = 100μs
PW = 1ms
PW = 10ms
Ta = 25ºC
Single Pulse
*Calculation(PW10μs)
PW = 10μs*
PW = 1μs*
PW = 100ns*
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 5/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 25ºC 3rd Quadrant Characteristics
Drain Current : ID [A]
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
Drain Current : ID [A]
Drain Current : ID [A]
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-10 -8 -6 -4 -2 0
Ta = 25ºC
Pulsed
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
0
10
20
30
40
50
60
70
80
90
100
0 2 4 6 8 10
Ta = 25ºC
Pulsed
10V
VGS= 8V
16V
18V
14V
20V
12V
0
5
10
15
20
25
30
35
40
45
50
012345
Ta = 25ºC
Pulsed
VGS= 8V
10V
14V
16V
18V
20V
12V
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 6/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Drain - Source Voltage : VDS [V]
Gate - Source Voltage : VGS [V]
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
Fig.10 Body Diode Forward Voltage
　　　 vs. Gate - Source Voltage
Drain Current : ID [A]
Body Diode Forward Voltage : VSD [V]
Fig.7 Tj = 150ºC Typical Output
Characteristics(I)
Fig.8 Tj = 150ºC Typical Output
Characteristics(II)
Drain Current : ID [A]
Drain Current : ID [A]
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-10 -8 -6 -4 -2 0
Ta = 150ºC
Pulsed
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
0
10
20
30
40
50
60
70
80
90
100
0246810
Ta = 150ºC
Pulsed
10V
VGS= 8V
18V
16V
20V
14V
12V
0
5
10
15
20
25
30
35
40
45
50
012345
Ta = 150ºC
Pulsed
10V
VGS= 8V
16V
14V
20V
18V
12V
0
1
2
3
4
5
6
-4 0 4 8 12 16 20
Ta= 150ºC
Ta= 25ºC
ID=36A
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 7/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Junction Temperature : Tj [ºC]
Drain Current : ID [A]
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Fig.14 Transconductance vs. Drain Current
Gate Threshold Voltage : V GS(th) [V]
Transconductance : gfs [S]
Fig.11 Typical Transfer Characteristics (I)
Fig.12 Typical Transfer Characteristics (II)
Drain Current : ID [A]
Drain Current : ID [A]
0.1
1
10
0.1 1 10
V
DS
= 10V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
1
2
3
4
5
6
-50 0 50 100 150 200
VDS = 10V
ID = 18.2mA
0.01
0.1
1
10
100
0246810 12 14 16 18 20
T
a= 150ºC
T
a= 75ºC
T
a= 25ºC
Ta= -25ºC
VDS = 10V
Pulsed
0
10
20
30
40
50
60
70
80
90
100
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
VDS = 10V
Pulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 8/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Drain Current : ID [A]
Junction Temperature : Tj [ºC]
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Junction Temperature
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
Normalized Drain - Source
Breakdown Voltage
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
810 12 14 16 18 20 22
Ta = 25ºC
Pulsed
0.00
0.01
0.02
0.03
0.04
0.05
-50 0 50 100 150 200
V
GS
= 18V
Pulsed
ID= 63A
ID= 36A
ID= -36A
ID= 63A
ID= 36A
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-50 0 50 100 150 200
0.01
0.1
110 100
V
GS
= 18V
Pulsed
T
a
= 150ºC
T
a = 12
5ºC
T
a = 75ºC
T
a = 25ºC
Ta = -25ºC
ID= -36A
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 9/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Total Gate Charge : Qg [nC]
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
*Gate Charge Waveform
Gate - Source Voltage : VGS [V]
Fig.19 Typical Capacitance
　　　　　vs. Drain - Source Voltage
Fig.20 Coss Stored Energy
Capacitance : C [pF]
Coss Stored Energy : EOSS [µJ]
0
10
20
30
40
50
60
70
0 100 200 300 400 500 600 700 800
Ta = 25ºC
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºC
f = 1MHz
VGS = 0V
0
5
10
15
20
040 80 120 160 200
Ta = 25ºC
VDD = 600V
ID = 36A
Pulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 10/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lElectrical characteristic curves
Drain Current : ID [A]
External Gate Resistance : RG [Ω]
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
　　　　　vs. Drain Current
Fig.22 Typical Switching Loss
　　　　　vs. External Gate Resistance
Switching Energy : E [µJ]
Switching Energy : E [µJ]
Fig.19 Typical Switching Time
　　　　　vs. Drain Current
Fig.20 Typical Switching Loss
　　　　　vs. Drain - Source Voltage
Switching Time : t [ns]
Switching Energy : E [µJ]
0
800
1600
2400
3200
4000
4800
5600
0 5 10 15 20 25 30
Eon
Eoff
0
800
1600
2400
3200
4000
4800
5600
020 40 60 80 100
Eon
Eoff
0
200
400
600
800
1000
1200
1400
200 400 600 800 1000
Eon
Eoff
1
10
100
1000
10000
0.1 1 10 100
tf
td(on)
td(off)
tr
Ta = 25°C
ID =36A
VGS= +18V/0V
RG =0Ω
L = 250μH
Ta = 25°C
VDD=600V
VGS= +18V/0V
RG =0Ω
L = 250μH
Ta = 25°C
ID =36A
VDD=600V
VGS= +18V/0V
L = 250μH
Ta = 25°C
VDD=400V
VGS= +18V/0V
RG =0Ω
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 11/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
SCT3022KLHR
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time
Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss
Fig.3-1 Reverse Recovery Time Measurement Circuit
Fig.3-2 Reverse Recovery Waveform
Vsurge
Irr
Eon =
ID∙VDS dt Eoff =
ID∙VDS dt
ID
VDS
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 12/12
TSQ50211-SCT3022KLHR
16.Nov.2018 - Rev.001
Datasheet
R1107
S
www.rohm.com
©2012ROHMCo.,Ltd.Allrightsreserved.
Notice
ROHM Customer Support System
http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions.
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
12)
13)