2N3819
SILICON
N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon
N-Channel JFET designed for RF amplifier and mixer
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Drain-Gate Voltage VDG 25 V
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS 25 V
Continuous Gate Current IG 10 mA
Power Dissipation PD 360 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IGSS V
GS=15V 2.0 nA
IGSS V
GS=15V, TA=100°C 2.0 A
IDSS V
DS=15V 2.0 20 mA
BVGSS I
G=1.0µA 25 V
VGS(OFF) V
DS=15V, ID=2.0nA 8.0 V
VGS V
DS=15V, ID=200A 0.5 7.5 V
|Yfs| V
DS=15V, VGS=0, f=1.0MHz 2.0 6.5 mS
|Yfs| V
DS=15V, VGS=0, f=100MHz 1.6 mS
|Yos| V
DS=15V, VGS=0, f=1.0kHz 50 S
Ciss V
DS=15V, VGS=0, f=1.0MHz 8.0 pF
Crss V
DS=15V, VGS=0, f=1.0MHz 4.0 pF
TO-92 CASE
R1 (9-January 2014)
www.centralsemi.com
2N3819
SILICON
N-CHANNEL JFET
LEAD CODE:
1) Drain
2) Gate
3) Source
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
TYPICAL ELECTRICAL CHARACTERISTICS
www.centralsemi.com
R1 (9-January 2014)
2N3819
SILICON
N-CHANNEL JFET
R1 (9-January 2014)
www.centralsemi.com
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