©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
MPSA43
TO-92
Absolute Maximum Ratings * TA=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 200 V
VCBO Collector-Base Voltage 200 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condit ion Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 200 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 200 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 100µA, IC = 0 6.0 V
ICBO Collect or Cutoff Current VCB = 160V, IE = 0 0.1 µA
IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 0.1 µA
On Characteristics *
hFE DC Current Gain IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
25
40
50 200
VCE(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 2.0mA 0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 20mA, IB = 2.0mA 0.9 V
Small Signal Characteristics *
fTCurrent Gain Dandwidth Product IC = 10mA, VCE = 20V, f = 100MHz 50 MHz
Ccb Collector-Base Capacitance VCB = 20V, IE = 0, f = 1.0MHz 4.0 pF
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
MPSA43
NPN High Voltage Amplifier
• This device is designed for application as a video output to drive color
CRT and other high voltage applications.
• Sourced from process 48.
• See MPSA42 for characteristics.
1. Emitter 2. Base 3. Collector
1
Package Dimensions
MPSA43
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2002 Fairchild Semiconductor Corporation Rev. I1
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