2SA1300
2007-11-01
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TOSHIBA T ransistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −0.5 V (max)
(IC = −2 A, IB = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −20 V
VCES −20
Collector-emitter voltage VCEO −10 V
Emitter-base voltage VEBO −6 V
DC IC −2
Collector current Pulsed
(Note 1) ICP −5 A
Base current IB −0.2 A
Collector power dissipation PC 750 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Hand book
(“Handling Precautions”/“Der ating Concept and Methods”) and individu al reliability data (i.e. reliability te st
report and estimated failure rate, etc).
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −20 V, IE = 0 ⎯ ⎯ −0.1 μA
Emitter cut-off current IEBO V
EB = −6 V, IC = 0 ⎯ ⎯ −0.1 μA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ⎯ ⎯ V
Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −6 ⎯ ⎯ V
hFE (1)
(Note 2) VCE = −1 V, IC = −0.5 A 140 ⎯ 600
DC current gain
hFE (2) V
CE = −1 V, IC = −4 A 60 120 ⎯
Collector-emitter saturation voltage VCE (sat) I
C = −2 A, IB = −50 mA ⎯ −0.2 −0.5 V
Base-emitter voltage VBE V
CE = −1 V, IC = −2 A ⎯ −0.83 −1.5 V
Transition frequency fT V
CE = −1 V, IC = −0.5 A ⎯ 140 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 50 ⎯ pF
Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
2SA1300
2007-11-01
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2SA1300
2007-11-01
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