MC74HCT374A
http://onsemi.com
3
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MAXIMUM RATINGS
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
Value
Unit
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Current, per Pin
±20
mA
Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Current, per Pin
±35
mA
ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Current, VCC and GND Pins
±75
mA
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
750
500
450
mW
Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Temperature
– 65 to + 150
_C
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
260
_C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
Min
Max
Unit
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise and Fall Time (Figure 1)
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Parameter
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
VIH
Minimum High−Level Input Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Maximum Low−Level Input Voltage
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Minimum High−Level Output Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
3.98
3.84
3.7
VOL
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Maximum Low−Level Output Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
0.26
0.33
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
±0.1
±1.0
±1.0
mA
IOZ
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ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Maximum Three−State Leakage
Current
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
±0.5
±5.0
±10
mA
ICC
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Maximum Quiescent Supply Current
(per Package)
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Vin = VCC or GND
Iout = 0 mA
5.5
4.0
40
160
mA
DICC
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Additional Quiescent Supply Current
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 mA
5.5
≥ −55_C
25_C to 125_C
mA
2.9
2.4
1. Total Supply Current = ICC + ΣDICC.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.