MJE13005
SILICON NPN SWITCHING TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPE
DESCRI PTI ON
The MJE13005 is a silicon multiepitaxial mesa
NPN transistor in Jedec TO-220 plastic package
particularly intended for switch-mode
applications.
INTERNAL SCHEMAT IC DIAG RAM
October 1995
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 9V
I
C
Collector Current 4A
I
CM Collector Peak Current 8A
I
B
Base Current 2A
I
BM Base Peak Current 4A
P
tot Total Power Dissipation at Tcase 25 oC75 W
Tstg Storage Temperature -65 to +150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.67 oC/W
ELE CT RICAL CHA RACT ERISTI CS (Tcase = 25 oC unless oth erwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = 700V
VCE = 700V Tca se = 100oC1
5mA
mA
IEBO Emitter Cut-off
Current (IC = 0) VEB = 9 V 1mA
V
CEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0) IC = 10 mA 400 V
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.5 A
IC = 4 A IB = 1 A
0.5
0.6
1
V
V
VBE(sat)Base-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.5 A 1.2
1.6 V
hFE DC Current Gain IC = 1 A VCE = 5 V
IC = 2 A VCE = 5 V 10
830 60
40 V
ton
ts
tf
Turn-on Time
Storage Time
Fall Time
IC = 2 A
IB1 = -IB2 = 0.4 A
VCC = 250 V
0.8
4
0.9
µs
µs
µs
P ulsed: P ulse durat ion = 300µs, duty cycle = 1.5 %
MJE13005
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
MJE13005
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informat ion nor for any inf ring ement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specificat ions mentione d
in this publicat i on ar e subj ec t to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approv al o f S G S-THOM SO N M icroelecto nics.
© 1995 SGS-TH OMSO N Microe lectroni cs - All Rights Res er ved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MJE13005
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