MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 4 A Collector Peak Current 8 A A IC I CM Base Current 2 I BM Base Peak Current 4 A P tot Total Power Dissipation at Tcase 25 o C 75 W T stg Storage Temperature IB Tj Max. Operating Junction Temperature October 1995 -65 to +150 o C 150 o C 1/4 MJE13005 THERMAL DATA R thj-case Thermal Resistance Junction-case o 1.67 Max C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 700V V CE = 700V I EBO Emitter Cut-off Current (I C = 0) V EB = 9 V Collector-Emitter VCEO(sus) Sustaining Voltage (I B = 0) Min. Typ. T case = 100 o C Max. Unit 1 5 mA mA 1 mA 400 I C = 10 mA V V CE(sat) Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 4 A I B = 0.2 A I B = 0.5 A IB = 1 A 0.5 0.6 1 V BE(sat) Base-Emitter Saturation Voltage IC = 1 A IC = 2 A I B = 0.2 A I B = 0.5 A 1.2 1.6 V h FE DC Current Gain IC = 1 A IC = 2 A 60 40 V t on ts tf Turn-on Time Storage Time Fall Time IC = 2 A I B1 = -IB2 = 0.4 A V CC = 250 V 0.8 4 0.9 s s s Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/4 V CE = 5 V V CE = 5 V 10 8 30 V V MJE13005 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 MJE13005 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4