US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A trr 50 ns, 75 ns VF at IF 1.0 V, 1.7 V TJ max. 150 C Package DO-214AC (SMA) Diode variations Single die MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, automotive grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code US1A US1B US1D US1G US1J US1K US1M UA UB UD UG UJ UK UM UNIT 100 200 400 600 800 1000 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 110 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -55 to +150 C Operating and storage temperature range Revision: 30-Oct-13 Document Number: 88768 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A US1A US1B VF (1) TA = 25 C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 100 C US1D US1G US1J 1.0 US1K US1M 1.7 V 10 IR UNIT A 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 10 pF Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance US1A US1B US1D US1G RJA (1) 75 RJL (1) 27 US1J US1K US1M UNIT C/W Note PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE US1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel (1) 0.064 5AT 7500 13" diameter plastic tape and reel US1JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel US1JHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel US1JHE3/5AT Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 30 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 0.4 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 0 TL = 110 C 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 0 25 50 75 100 125 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 30-Oct-13 Document Number: 88768 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor 1000 Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A) 100 TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0.3 US1A thru US1G 0.7 0.9 1.1 1.3 1.5 10 TJ = 100 C 1 US1J thru US1M 0.1 1.7 TJ = 25 C 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics 100 TJ = 150 C Junction Capacitance (pF) Instantaneous Reverse Leakage Current (A) TJ = 125 C 0.01 0.5 100 TJ = 125 C 10 TJ = 100 C 1 0.1 US1A thru US1G US1A thru US1G TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p US1J thru US1M 10 TJ = 25 C 1 0.1 0.01 0 20 40 60 80 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction Capacitance 100 TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C US1J thru US1M 0.01 0.2 0.7 1.2 1.7 2.2 2.7 3.2 Transient Thermal Impedance (C/W) 100 Instantaneous Forward Current (A) TJ = 150 C 100 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Transient Thermal Impedance Revision: 30-Oct-13 Document Number: 88768 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 30-Oct-13 Document Number: 88768 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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