2005-2013 Microchip Technology Inc. DS21813F-page 1
TC1017
Features:
Space-saving 5-Pin SC-70 and SOT-23 Packages
Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
Very Low Dropout Voltage
Rated 150 mA Output Current
Requires Only 1 µF Ceramic Output Capacitance
High Output Voltage Accuracy: 0.5% (typical)
10 µs (typ.) Wake-Up Time from SHDN
Power-Saving Shutdown Mode: 0.05 µA (typ.)
Overcurrent and Overtemperature Protection
Pin-Compatible Upgrade for Bipolar Regulators
Applications:
Cellular/GSM/PHS Phones
Battery-Operated Systems
Portable Computers
Medical Instruments
Electronic Games
Pagers
General Description:
The TC1017 is a high-accuracy (typically ±0.5%)
CMOS upgrade for bipolar Low Dropout regulators
(LDOs). It is offered in a SC-70 or SOT-23 package.
The SC-70 package represents a 50% footprint reduc-
tion versus the popular SOT-23 package and is offered
in two pinouts to make board layout easier.
Developed specifically for battery-powered systems,
the TC1017’s CMOS construction consumes only
53 µA typical supply current over the entire 150 mA
operating load range. This can be as much as 60 times
less than the quiescent operating current consumed by
bipolar LDOs.
The TC1017 is designed to be stable, over the entire
input voltage and output current range, with low-value
(1 µF) ceramic or tantalum capacitors. This helps to
reduce board space and save cost. Additional inte-
grated features, such as shutdown, overcurrent and
overtemperature protection, further reduce the board
space and cost of the entire voltage-regulating
application.
Key performance parameters for the TC1017 include
low dropout voltage (285 mV typical at 150 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Package Types
SC-70
13
45
2
SHDN NC
VOUT
VIN
GND
TC1017
SOT-23
123
54
NCVOUT
SHDNGNDVIN
TC1017
13
45
2
VIN GND
NCVOUT
SHDN
TC1017R
150 mA, Tiny CMOS LDO With Shutdown
TC1017
DS21813F-page 2 2005-2013 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Power Dissipation ......................... Internally Limited (Note 7)
Maximum Voltage On Any Pin ..................VIN + 0.3V to -0.3V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
PIN FUNCTION TABLE
Name Function
SHDN Shutdown control input.
NC No connect
GND Ground terminal
VOUT Regulated voltage output
VIN Unregulated supply input
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperatures of –40°C to +125°C.
Parameter Sym. Min. Typ. Max. Units Test Conditions
Input Operating Voltage VIN 2.7 6.0 VNote 1
Maximum Output Current IOUTMAX 100 ——mANote 1
150 —— V
IN >= 3V and
VIN >= (VR + 2.5%) +
VDROPOUTMAX
Output Voltage VOUT VR – 2.5% VR ±0.5% VR + 2.5% VNote 2
VOUT Temperature Coefficient TCVOUT 40 ppm/°C Note 3
Line Regulation VOUT/VIN)| / VR—0.040.2 %/V (VR + 1V) < VIN < 6V
Load Regulation (Note 4)VOUT| / VR—0.381.5 %I
L = 0.1 mA to IOUTMAX
Dropout Voltage (Note 5)VIN – VOUT
2
90
180
285
200
350
500
mV IL = 100 µA
IL = 50 mA
IL = 100 mA
IL = 150 mA
Supply Current IIN —5390 µA SHDN = VIH, IL = 0
Shutdown Supply Current IINSD 0.05 2 µA SHDN = 0V
Power Supply Rejection Ratio PSRR 58 dB f =1 kHz, IL = 50 mA
Note 1: The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT.
2: VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 “Thermal Shutdown”, for more
details.
8: Output current is limited to 120 mA (typ) when VOUT is less than 0.5V due to a load fault or short-circuit condition.
TCVOUT
VOUTMAX VOUTMIN
106
VOUT T
--------------------------------------------------------------------------------------=
2005-2013 Microchip Technology Inc. DS21813F-page 3
TC1017
Wake-Up Time
(from Shutdown mode)
tWK —10µsV
IN = 5V, IL = 60 mA,
CIN = COUT =1 µF,
f = 100 Hz
Settling Time
(from Shutdown mode)
tS—32µsV
IN = 5V, IL = 60 mA,
CIN = 1 µF,
COUT = 1 µF, f = 100 Hz
Output Short-Circuit Current IOUTSC 120 mA VOUT = 0V, Average
Current (Note 8)
Thermal Regulation VOUT/PD—0.04V/WNotes 6,7
Thermal Shutdown Die
Temperature
TSD 160 °C
Thermal Shutdown Hysteresis TSD —10°C
Output Noise eN 800 nV/Hz f = 10 kHz
SHDN Input High Threshold VIH 45 ——%V
IN VIN = 2.7V to 6.0V
SHDN Input Low Threshold VIL ——15 %VIN VIN = 2.7V to 6.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperatures of –40°C to +125°C.
Parameter Sym. Min. Typ. Max. Units Test Conditions
Note 1: The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT.
2: VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 “Thermal Shutdown”, for more
details.
8: Output current is limited to 120 mA (typ) when VOUT is less than 0.5V due to a load fault or short-circuit condition.
TCVOUT
VOUTMAX VOUTMIN
106
VOUT T
--------------------------------------------------------------------------------------=
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +6.0V and VSS = GND.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 +125 °C Extended Temperature parts
Operating Temperature Range TA-40 +125 °C
Storage Temperature Range TA-65 +150 °C
Thermal Package Resistances3
Thermal Resistance, 5L-SOT23 JA 255 °C/W
Thermal Resistance, 5L-SC-70 JA 450 °C/W
TC1017
DS21813F-page 4 2005-2013 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-1: Dropout Voltage vs. Output
Current.
FIGURE 2-2: Load Regulation vs.
Temperature.
FIGURE 2-3: Supply Current vs. Input
Voltage.
FIGURE 2-4: Dropout Voltage vs.
Temperature.
FIGURE 2-5: Short-Circuit Current vs.
Input Voltage.
FIGURE 2-6: Supply Current vs.
Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 25 50 75 100 125 150
Load Current (mA)
Dropout Voltage (V)
TA = +125°C
TA = +25°C
TA = -40°C
VOUT = 2.85V
-0.70
-0.65
-0.60
-0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-40 -15 10 35 60 85 110
Temperature (°C)
Load Regulation (%)
VOUT
= 2.85
V
IOUT
= 0-150 mA
VIN
= 6.0
V
VIN
= 3.85V
VIN
= 3.3
V
50
51
52
53
54
55
56
57
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
Supply Current (µA)
TA = -40°C
TA = +25°C
TA = +125°C
VOUT = 2.85V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-40 -15 10 35 60 85 110
Temperature (°C)
Dropout Voltage (V)
IOUT = 50 mA
IOUT = 100 mA
IOUT = 150 mA
VOUT = 2.85V
0
20
40
60
80
100
120
140
160
123456
Input Voltage (V)
Short Circuit Current (mA)
VOUT = 2.85V
50
51
52
53
54
55
56
57
-40 -15 10 35 60 85 110
Temperature (°C)
Supply Current (µA)
VIN = 6.0V
VIN = 3.85V
VIN = 3.3V
VOUT = 2.85V
2005-2013 Microchip Technology Inc. DS21813F-page 5
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-7: Dropout Voltage vs. Output
Current.
FIGURE 2-8: Load Regulation vs.
Temperature.
FIGURE 2-9: Supply Current vs.
Temperature.
FIGURE 2-10: Dropout Voltage vs.
Temperature.
FIGURE 2-11: Supply Current vs. Input
Voltage.
FIGURE 2-12: Output Voltage vs. Supply
Voltage.
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 25 50 75 100 125 150
Load Current (mA)
Dropout Voltage (V)
VOUT = 3.30V
TA = +125°C
TA = +25°C
TA = -40°C
-0.70
-0.65
-0.60
-0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-40 -15 10 35 60 85 110
Temperature (°C)
Load Regulation (%)
VOUT = 3.30V
IOUT = 0-150 mA
VIN = 6.0V
VIN = 4.0V
VIN = 4.3V
52
53
54
55
56
57
58
59
60
-40 -15 10 35 60 85 110
Temperature (°C)
Supply Current (µA)
VOUT = 3.30V
VIN = 4.0V
VIN = 4.3V
VIN = 6.0V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-40 -15 10 35 60 85 110
Temperature (°C)
Dropout Voltage (V)
VOUT = 3.30V
IOUT = 150 mA
IOUT = 100 mA
IOUT = 50 mA
52
53
54
55
56
57
58
59
60
4.04.55.05.56.0
Input Voltage (V)
Supply Current (µA)
TA = +125°C
TA = +25°C
TA = -40°C
VOUT = 3.30V
2.862
2.863
2.864
2.865
2.866
2.867
2.868
2.869
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
Output Voltage (V)
VOUT = 2.85V
TA = -40°C
TA = +25°C
TA = +125°C
TC1017
DS21813F-page 6 2005-2013 Microchip Technology Inc.
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-13: Output Voltage vs. Output
Current.
FIGURE 2-14: Shutdown Current vs. Input
Voltage.
FIGURE 2-15: Power Supply Rejection
Ratio vs. Frequency.
FIGURE 2-16: Output Voltage vs.
Temperature.
FIGURE 2-17: Output Noise vs. Frequency.
FIGURE 2-18: Power Supply Rejection
Ratio vs. Frequency.
2.854
2.856
2.858
2.860
2.862
2.864
2.866
2.868
2.870
0 25 50 75 100 125 150
Load Current (mA)
Output Voltage (V)
VIN = 3.85V
VIN = 6.0V
VOUT = 2.85V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
Shutdown Current (µA)
TA = +25°C
TA = +125°CVOUT = 2.85V
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (KHz)
PSRR (dB)
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
IOUT = 100 μA
COUT =1 μFX7RCeramic
2.862
2.863
2.864
2.865
2.866
2.867
2.868
2.869
-40 -15 10 35 60 85 110
Temperature (°C)
Output Voltage (V)
VIN = 3.3V
VIN= 3.85V
VIN = 6.0V
VOUT = 2.85V
0.01
0.1
1
10
100
10 100 1000 10000 100000 1000000
Frequency (Hz)
Noise (µV/Hz)
VIN = 3.85V
VOUT = 2.85V
CIN = 1 µF
COUT = 1 µF
IOUT = 40 mA
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (KHz)
PSRR (dB)
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
IOUT =1mA
COUT =1μFX7RCeramic
2005-2013 Microchip Technology Inc. DS21813F-page 7
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-19: Power Supply Rejection
Ratio vs. Frequency.
FIGURE 2-20: Wake-Up Response.
FIGURE 2-21: Wake-Up Response.
FIGURE 2-22: Load Transient Response.
FIGURE 2-23: Load Transient Response.
FIGURE 2-24: Line Transient Response.
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (KHz)
PSRR (dB)
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
IOUT =50mA
COUT =1μFX7RCeramic
VIN
= 3.85V
CIN
= 10 µ
F
COUT
= 1 µF Ceramic
Shutdow n Input
VOUT = 2.85V
= 10 µ
F
= 2.85V
VIN = 3.85V
CIN
= 10 µ
F
COUT = 1 µF Ceramic
VOUT = 2.85V
IOUT = 0.1 mA to 120 mA
VIN
= 3.85V
CIN
= 10 µ
F
COUT
= 4.7 µF Ceramic
VOUT = 2.85V
IOUT = 0.1 mA to 120 mA
CIN
= 0 µ
F
COUT = 1.0 µF Ceramic
ILOAD = 120 mA
VOUT = 2.85V
VIN = 3.85V to 4.85V
TC1017
DS21813F-page 8 2005-2013 Microchip Technology Inc.
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-25: Line Transient Response. FIGURE 2-26: Line Transient Response.
FIGURE 2-27: Line Transient Response.
CIN
= 0 µ
F
COU T = 4.7 µF Ceramic
ILOAD = 120 mA
VOUT = 2.85V
VIN = 3.85V to 4.85V
CIN
= 0 µ
F
COUT = 1 µF Ceramic
ILOAD = 100 µA
VOUT = 3.33V
VIN = 4.3V to 5.3V
CIN = 0 µF
COUT = 10 µF Ceramic
ILOAD = 100 µA
VOUT = 3.33V
VIN = 4.3V to 5.3V
2005-2013 Microchip Technology Inc. DS21813F-page 9
TC1017
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.05 µA (typ.)
3.2 Ground Terminal
For best performance, it is recommended that the
ground pin be tied to a ground plane.
3.3 Regulated Voltage Output (VOUT)
Bypass the regulated voltage output to GND with a
minimum capacitance of 1 µF. A ceramic bypass
capacitor is recommended for best performance.
3.4 Unregulated Supply Input (VIN)
The minimum VIN has to meet two conditions in order
to ensure that the output maintains regulation:
VIN 2.7V and VIN [(VR + 2.5%) + VDROPOUT]. The
maximum VIN should be less than or equal to 6V.
Power dissipation may limit VIN to a lower potential in
order to maintain a junction temperature below 125°C.
Refer to Section 5.0 “Thermal Considerations”, for
determining junction temperature.
It is recommended that VIN be bypassed to GND with a
ceramic capacitor.
Pin No.
5-Pin SC-70
Pin No.
5-Pin SOT-23
5-Pin SC-70R
Symbol Description
13SHDN
Shutdown Control Input
24 NC No Connect
32
GND Ground Terminal
45VOUT Regulated Voltage Output
51V
IN Unregulated Supply Input
TC1017
DS21813F-page 10 2005-2013 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC1017 is a precision, fixed-output, linear voltage
regulator. The internal linear pass element is a
P-channel MOSFET. As with all P-channel CMOS
LDOs, there is a body drain diode with the cathode
connected to VIN and the anode connected to VOUT
(Figure 4-1).
As is shown in Figure 4-1, the output voltage of the
LDO is sensed and divided down internally to reduce
external component count. The internal error amplifier
has a fixed bandgap reference on the inverting input
and the sensed output voltage on the non-inverting
input. The error amplifier output will pull the gate
voltage down until the inputs of the error amplifier are
equal to regulate the output voltage.
Output overload protection is implemented by sensing
the current in the P-channel MOSFET. During a shorted
or faulted load condition in which the output voltage
falls to less than 0.5V, the output current is limited to a
typical value of 120 mA. The current-limit protection
helps prevent excessive current from damaging the
Printed Circuit Board (PCB).
An internal thermal sensing device is used to monitor
the junction temperature of the LDO. When the sensed
temperature is over the set threshold of 160°C (typical),
the P-channel MOSFET is turned off. When the P-chan-
nel is off, the power dissipation internal to the device is
almost zero. The device cools until the junction tem-
perature is approximately 150°C and the P-channel is
turned on. If the internal power dissipation is still high
enough for the junction to rise to 160°C, it will again shut
off and cool. The maximum operating junction tempera-
ture of the device is 125°C. Steady-state operation at or
near the 160°C overtemperature point can lead to per-
manent damage of the device.
The output voltage VOUT remains stable over the entire
input operating voltage range (2.7V to 6.0V) and the
entire load range (0 mA to 150 mA). The output voltage
is sensed through an internal resistor divider and
compared with a precision internal voltage reference.
Several fixed-output voltages are available by
changing the value of the internal resistor divider.
Figure 4-2 shows a typical application circuit. The
regulator is enabled any time the shutdown input pin is
at or above VIH. It is shut down (disabled) any time the
shutdown input pin is below VIL. For applications where
the SHDN feature is not used, tie the SHDN pin directly
to the input supply voltage source. While in shutdown,
the supply current decreases to 0.006 µA (typical) and
the P-channel MOSFET is turned off.
As shown in Figure 4-2, batteries have internal source
impedance. An input capacitor is used to lower the
input impedance of the LDO. In some applications, high
input impedance can cause the LDO to become
unstable. Adding more input capacitance can
compensate for this.
FIGURE 4-1: TC1017 Block Diagram (5-Pin SC-70 Pinout).
FIGURE 4-2: Typical Application Circuit (5-Pin SC-70 Pinout).
+
-
EA
VOUT
VREF
SHDN
VIN
5
4
R1R2
1
2
3
SHDN
GND
VIN
NC
Current Limit
Over
Error
Feedback Resistors
Control
Temp .
Body
Diode
Amp
VOUT
5
4
1
2
3
SHDN
GND
VIN
NC
BATTERY
RSOURCE
CIN F Ceramic
COUT F Ceramic
TC1017
Load
2005-2013 Microchip Technology Inc. DS21813F-page 11
TC1017
4.1 Input Capacitor
Low input source impedance is necessary for the LDO
to operate properly. When operating from batteries, or
in applications with long lead length (> 10") between
the input source and the LDO, some input capacitance
is required. A minimum of 0.1 µF is recommended for
most applications and the capacitor should be placed
as close to the input of the LDO as is practical. Larger
input capacitors will help reduce the input impedance
and further reduce any high-frequency noise on the
input and output of the LDO.
4.2 Output Capacitor
A minimum output capacitance of 1 µF for the TC1017
is required for stability. The Equivalent Series Resis-
tance (ESR) requirements on the output capacitor are
between 0 and 2 ohms. The output capacitor should be
located as close to the LDO output as is practical.
Ceramic materials X7R and X5R have low temperature
coefficients and are well within the acceptable ESR
range required. A typical 1 µF X5R 0805 capacitor has
an ESR of 50 milli-ohms. Larger output capacitors can
be used with the TC1017 to improve dynamic behavior
and input ripple-rejection performance.
Ceramic, aluminum electrolytic or tantalum capacitor
types can be used. Since many aluminum electrolytic
capacitors freeze at approximately –30C, ceramic or
solid tantalums are recommended for applications
operating below –25C. When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
4.3 Turn-On Response
The turn-on response is defined as two separate
response categories, wake-up time (tWK) and settling
time (tS).
The TC1017 has a fast wake-up time (10 µsec, typical)
when released from shutdown. See Figure 4-3 for the
wake-up time designated as tWK. The wake-up time is
defined as the time it takes for the output to rise to 2%
of the VOUT value after being released from shutdown.
The total turn-on response is defined as the settling
time (tS) (see Figure 4-3). Settling time (inclusive with
tWK) is defined as the condition when the output is
within 98% of its fully-enabled value (32 µsec, typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions and
output capacitance on VOUT (RC response).
The table below demonstrates the typical turn-on
response timing for different input voltage power-up
frequencies: VOUT = 2.85V, VIN = 5.0V, IOUT = 60 mA
and COUT = 1 µF.
FIGURE 4-3: Wake-Up Time from Shutdown.
Frequency Typical (tWK) Typical (tS)
1000 Hz 5.3 µsec 14 µsec
500 Hz 5.9 µsec 16 µsec
100 Hz 9.8 µsec 32 µsec
50 Hz 14.5 µsec 52 µsec
10 Hz 17.2 µsec 77 µsec
VIH
tS
tWK
VOUT
98%
2%
VIL
SHDN
TC1017
DS21813F-page 12 2005-2013 Microchip Technology Inc.
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when the die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
5.2 Power Dissipation: SC-70
The TC1017 is available in the SC-70 package. The
thermal resistance for the SC-70 package is
approximately 450°C/W when the copper area used in
the PCB layout is similar to the JEDEC J51-7 high ther-
mal conductivity standard or semi-G42-88 standard.
For applications with a larger or thicker copper area,
the thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application” (DS00792), for a method to
determine the thermal resistance for a particular appli-
cation.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
state junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-1:
The VIN x IGND term is typically very small when
compared to the (VIN–VOUT) x ILOAD term, simplifying
the power dissipation within the LDO to be:
EQUATION 5-2:
To determine the maximum power dissipation
capability, the following equation is used:
EQUATION 5-3:
Given the following example:
Find:
1. Internal power dissipation:
2. Maximum allowable ambient temperature:
3. Maximum allowable power dissipation at
desired ambient:
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised 71°C
over the ambient. The absolute maximum power
dissipation is 155 mW when given a maximum ambient
temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-1 and Figure 5-2 depict typical maximum
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient tempera-
ture, with a 1V input voltage to output voltage
differential, respectively.
FIGURE 5-1: Power Dissipation vs.
Ambient Temperature (SC-70 package).
PDVIN VOUT
ILOAD VIN IGND
+=
PDVIN VOUT
ILOAD
=
PDMAX
TJ_MAX TA_MAX

R
JA
----------------------------------------------=
Where:
TJ_MAX = the maximum junction
temperature allowed
TA_MAX = the maximum ambient
temperature
RJA = the thermal resistance from
junction to air
VIN = 3.0V to 4.1V
VOUT = 2.85V ±2.5%
ILOAD = 120 mA (output current)
TA= 55°C (max. desired ambient)
PDMAX VIN_MAX VOUT_MIN
ILOAD
=
4.1V 2.85 0.975120mA=
158.5mW=
TA_MAX TJ_MAX PDMAX R
JA
=
125
C 158.5mW 450
C/W=
54
C=
125
C71
C=
PD
TJ_MAX TA
R
JA
------------------------------=
155mW=
125
C55
C
450
C/W
-----------------------------------=
0
50
100
150
200
250
300
350
400
-40 -15 10 35 60 85 110
Ambient Temperature (°C)
Power Dissipation (mW)
2005-2013 Microchip Technology Inc. DS21813F-page 13
TC1017
FIGURE 5-2: Maximum Current vs.
Ambient Temperature (SC-70 package).
5.3 Power Dissipation: SOT-23
The TC1017 is also available in a SOT-23 package for
improved thermal performance. The thermal resistance
for the SOT-23 package is approximately 255°C/W
when the copper area used in the printed circuit board
layout is similar to the JEDEC J51-7 low thermal
conductivity standard or semi-G42-88 standard. For
applications with a larger or thicker copper area, the
thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application” (DS00792), for a method to
determine the thermal resistance for a particular
application.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
state junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-4:
The VIN x IGND term is typically very small when
compared to the (VIN–VOUT) x ILOAD term, simplifying the
power dissipation within the LDO to be:
EQUATION 5-5:
To determine the maximum power dissipation
capability, the following equation is used:
EQUATION 5-6:
Given the following example:
Find:
1. Internal power dissipation:
2. Maximum allowable ambient temperature:
3. Maximum allowable power dissipation at
desired ambient:
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised
40.5°C over the ambient. The absolute maximum
power dissipation is 157 mW when given a maximum
ambient temperature of +85°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-3 and Figure 5-4 depict typical maximum
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient tempera-
ture with a 1V input voltage to output voltage
differential, respectively.
0
20
40
60
80
100
120
140
160
-40 -15 10 35 60 85 110
Ambient Temperature (°C)
Maximum Current (mA)
VIN - VOUT = 1V
PDVIN VOUT
ILOAD VIN IGND
+=
PDVIN VOUT
ILOAD
=
VIN = 3.0V to 4.1V
VOUT = 2.85V ±2.5%
ILOAD = 120 mA (output current)
TA= +85°C (max. desired ambient)
PDMAX
TJ_MAX TA_MAX

RJA
-------------------------------------------------=
Where:
TJ_MAX = the maximum junction
temperature allowed
TA_MAX = the maximum ambient
temperature
RJA = the thermal resistance from
junction to air
PDMAX VIN_MAX VOUT_MIN
ILOAD
=
4.1V 2.85 0.975120mA=
158.5mW=
TA_MAX TJ_MAX PDMAX R
JA
=
125
C 158.5mW 255
C/W=
84.5
C=
125
C40.5
C=
PD
TJ_MAX TA
R
JA
------------------------------=
157mW=
125
C85
C
255
C/W
-----------------------------------=
TC1017
DS21813F-page 14 2005-2013 Microchip Technology Inc.
FIGURE 5-3: Power Dissipation vs.
Ambient Temperature (SOT-23 Package).
FIGURE 5-4: Maximum Current vs.
Ambient Temperature (SOT-23 Package).
5.4 Layout Considerations
The primary path for heat conduction out of the SC-70/
SOT-23 package is through the package leads. Using
heavy, wide traces at the pads of the device will
facilitate the removal of the heat within the package,
thus lowering the thermal resistance RJA. By lowering
the thermal resistance, the maximum internal power
dissipation capability of the package is increased.
FIGURE 5-5: SC-70 Package Suggested
Layout.
0
100
200
300
400
500
600
700
-40 -15 10 35 60 85 110
Ambient Temperature (°C)
Power Dissipation (mW)
0
20
40
60
80
100
120
140
160
-40 -15 10 35 60 85 110
Ambient Temperature (°C)
Maximum Current (mA)
VIN - VOUT = 1V
SHDN
U1
V
IN
V
OUT
GND
C
1
C
2
2005-2013 Microchip Technology Inc. DS21813F-page 15
TC1017
6.0 PACKAGE INFORMATION
6.1 Package Marking Information
5-Pin SC-70/SC-70R
Top Side Bottom Side
XXN YWW
XXN
Part Number TC1017 Pinout
Code
TC1017R Pinout
Code
TC1017 – 1.8VLT CE CU
TC1017 – 1.85VLT CQ DF
TC1017 – 1.9VLT CB
TC1017 – 2.5VLT CR CV
TC1017 – 2.6VLT CF CW
TC1017 – 2.7VLT CG CX
TC1017 – 2.8VLT CH CY
TC1017 – 2.85VLT CJ CZ
TC1017 – 2.9VLT CK DA
TC1017 – 3.0VLT CL DB
TC1017 – 3.2VLT CC DC
TC1017 – 3.3VLT CM DD
TC1017 – 4.0VLT CP DE
5-Pin SC-70/SC-70R
N
Legend: XX...X Customer-specific information*
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
OR
5-Lead SOT-23
XXNN
Part Number Code
TC1017 – 1.8VCT DA
TC1017 – 1.85VCT DK
TC1017 – 2.6VCT DB
TC1017 – 2.7VCT DC
TC1017 – 2.8VCT DD
TC1017 – 2.85VCT DE
TC1017 – 2.9VCT DF
TC1017 – 3.0VCT DG
TC1017 – 3.3VCT DH
TC1017 – 4.0VCT DJ
Example:
DANN
TC1017
DS21813F-page 16 2005-2013 Microchip Technology Inc.
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2YHUDOO+HLJKW $  ± 
0ROGHG3DFNDJH7KLFNQHVV $  ± 
6WDQGRII $  ± 
2YHUDOO:LGWK (   
0ROGHG3DFNDJH:LGWK (   
2YHUDOO/HQJWK '   
)RRW/HQJWK /   
/HDG7KLFNQHVV F  ± 
/HDG:LGWK E  ± 
D
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TC1017
1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW
KWWSZZZPLFURFKLSFRPSDFNDJLQJ
TC1017
DS21813F-page 18 2005-2013 Microchip Technology Inc.
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2XWVLGH/HDG3LWFK H %6&
2YHUDOO+HLJKW $  ± 
0ROGHG3DFNDJH7KLFNQHVV $  ± 
6WDQGRII $  ± 
2YHUDOO:LGWK (  ± 
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2YHUDOO/HQJWK '  ± 
)RRW/HQJWK /  ± 
)RRWSULQW /  ± 
)RRW$QJOH  ± 
/HDG7KLFNQHVV F  ± 
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N
b
E
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D
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2005-2013 Microchip Technology Inc. DS21813F-page 19
TC1017
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
TC1017
DS21813F-page 20 2005-2013 Microchip Technology Inc.
NOTES:
2005-2013 Microchip Technology Inc. DS21813F-page 21
TC1017
APPENDIX A: REVISION HISTORY
Revision F (April 2013)
The following is the list of modifications:
Updated the information for the Maximum Output
Current parameter in the Electrical Characteristics
table.
Revision E (January 2013)
Added a note to each package outline drawing.
Revision D (February 2005)
Undocumented changes.
TC1017
DS21813F-page 22 2005-2013 Microchip Technology Inc.
NOTES:
2005-2013 Microchip Technology Inc. DS21813F-page 23
TC1017
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC1017: 150 mA Tiny CMOS LDO with Shutdown
TC1017R:150 mA Tiny CMOS LDO with Shutdown
(SC-70 only)
Voltage Options:*
(Standard)
1.8V
1.85V
2.5V SC-70 only
2.6V
2.7V
2.8V
2.85V
2.9V
3.0V
3.2V SC-70 only
3.3V
4.0V
* Other voltage options available. Please contact
your local Microchip sales office for details.
Temperature
Range:
V = -40°C to +125°C
Package: LTTR = 5-pin SC-70 (Tape and Reel)
CTTR = 5-pin SOT-23 (Tape and Reel)
PART NO. X.XX X
TemperatureVoltage
Options
Device
Range
Examples:
a) TC1017-1.8VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
b) TC1017R-1.8VLTTR:150mA, Tiny CMOS
LDO with Shutdown,
SC-70R package.
c) TC1017-2.6VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
d) TC1017-2.7VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
e) TC1017-2.8VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
f) TC1017-2.85VLTTR:150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
g) TC1017-2.9VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
h) TC1017-3.0VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
i) TC1017-3.3VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
j) TC1017-4.0VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
XXXX
Package
TC1017
DS21813F-page 24 2005-2013 Microchip Technology Inc.
NOTES:
2005-2013 Microchip Technology Inc. DS21813F-page 25
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2005-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620771440
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21813F-page 26 2005-2013 Microchip Technology Inc.
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China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
ASIA/PACIFIC
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
EUROPE
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Worldwide Sales and Service
11/29/12