T4-LDS-0230-1, Rev. 1 (111901) ©2011 Microsemi Corporation Page 1 of 5
1N5550US thru 1N5554US
Available on
commercial
versions
VOIDLESS HERMETICALLY S EALED SURFACE
MOUNT STANDARD RECOVERY GLASS REC TIFIERS
Qualified to MIL-PRF-19500/420
Qualified Levels:
JAN, J AN TX, JAN TXV
and JANS
DESCRIPTION
Thi s “stan dard rec overy” s urface moun t recti fi er diode seri es is mi lit ar y qualif i ed and i s ideal
for high-r el iability app l ication s where a f ailure cannot be t ol er ated. Th ese ind ustry-recognized
5.0 amp rated rect ifiers for working peak r everse volt ages from 200 to 1000 volts are
hermeti cally sealed wi th voidless -glas s construction using an in ternal “Category 1”
metallu r gical bond . Thes e devic es are also avai l able i n axia l -leaded pac kag es for thru-hole
moun ting. Micr osemi als o off er s n umerous other rec tifier produ cts t o meet h igher and lower
current ratings wi th various reco very time speeds .
“B” SQ-MELF (D-5B)
Package
Also available in:
“B” Package
(axial-leaded)
1N5550 – 1N5554
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDEC registered 1N5550 thru 1N5554 series.
• Voidless hermetically sealed glass package.
• Extremely robust cons truction.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
• RoHS compliant versions available (commercial grade onl y).
APPLIC ATIONS / BENEFITS
• Standard recovery 5 amp 200 to 1000 volts rectifiers series.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Low thermal resis tance.
• Controlled avalanche with peak reverse power capabili ty.
• Extremely robust cons truction.
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAXIMUM RATINGS @ TA = 25 oC unless oth er wis e noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-End Cap
RӨJEC
6.5
oC/W
T her mal I mpedan ce @ 10 ms heating ti me (1)
ZӨJX
1.5
oC/W
Maximum Forward Surge Current (8.3 ms hal f sine)
IFSM
100
A
Average Rectified Forward Current (2) @ T EC = 130 oC
IO(L)
5
A
Average Rectified Forward Current
(3)
@ T A = 55
o
C
@ T A = 100
o
C
IO2
(2)
IO3
(4)
3
2
A
A
Wor king Peak R ev er se Voltage 1N5550US
1N5551US
1N5552US
1N5553US
1N5554US
VRWM 200
400
600
800
1000
V
Solder Temperature @ 10 s
TSP
260
OC
S ee n ot es on ne xt page.
T4-LDS-0230-1, Rev. 1 (111901) ©2011 Microsemi Corporation Page 2 of 5
1N5550US thru 1N5554US
MAXIMUM RATINGS
Notes: 1. De rate li near ly at 6 6. 6 mA/º C abo ve TEC = 100 ºC. An IO of up to 6 Amps is allowable provided that appropriate heat sinking or forced air
cooling maintains the junction temperature at or below +200 oC.
2. De rate li near ly at 22.2 mA/ºC from +55 ºC to +100 oC.
3. These IO ratings are for a thermall y (PC boards or other) mounting methods where the lead or end-cap tem peratures cannot be maintained
and where thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX) do es not exce ed 175 oC. This
equates to RθJX ≤ 47 ºC/W.
4. De rate li nearly at 26.7 mA/°C above TA= +100 °C to +175 ° C am bient .
M ECHANI CAL and PACKAGI NG
• CASE: Hermetically sealed voidless hard glass with tung sten slug s.
• TERMINA LS: End caps are copper with tin/lead (Sn/Pb) finish. RoHS compliant ma tte-tin is available for commercial only.
• MARKING: Cathode band only.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
• WEIGHT: 539 milligrams.
• See Package Dimensions and recommended Pad Layout on last page.
PART NOME NCLAT URE
JAN 1N5550 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
SYMBOLS & DEF INITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Worki ng Peak Reverse V oltage: The maximum peak vol tage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhi bit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified vol tage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward di rection to the reverse direction and a specified decay point after a peak reverse current occ urs.
T4-LDS-0230-1, Rev. 1 (111901) ©2011 Microsemi Corporation Page 3 of 5
1N5550US thru 1N5554US
ELECTRICAL CHARACTERIST ICS @ TA = 25 oC unless other wise noted .
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR
IR @ 50
µ
A
Volts
FO RWARD VOLTAGE
VF @ 9 A (pk)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
µ
A
REVERSE
RECOVERY
trr
(Note 1)
µs
MIN.
Volts
MAX.
Volts
1N5550US
220
0.6 V (pk)
1.2 V (pk)
1.0
2.0
1N5551US
440
0.6 V (pk)
1.2 V (pk)
1.0
2.0
1N5552US
660
0.6 V (pk)
1.2 V (pk)
1.0
2.0
1N5553US
880
0.6 V (pk)
1.3 V (pk)
1.0
2.0
1N5554US
1100
0.6 V (pk)
1.3 V (pk)
1.0
2.0
NOTE 1: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A.
T4-LDS-0230-1, Rev. 1 (111901) ©2011 Microsemi Corporation Page 4 of 5
1N5550US thru 1N5554US
GRAPHS
tH Heating Tim e ( second s)
FIGURE 1
Max i mum Th er mal Imped anc e
VF – Forward Voltag e (V)
FIGURE 4
Typical Forward Voltage vs. Forward Current
Z
ӨJX
(oC/Watt)
I
F
– Forward Current (A)
T4-LDS-0230-1, Rev. 1 (111901) ©2011 Microsemi Corporation Page 5 of 5
1N5550US thru 1N5554US
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions ar e pr e-solder dip.
4. Mi nimum clearance of glass body to mounting surface on all orientations.
5. In accordance with ASME Y14.5M, diameters are equival ent to Φx symbology.
6. This package outline has also previously been identified as “D5B”.
PAD LAYOUT
Ltr
Inch
Millimeters
MIN
MAX
MIN
MAX
BL .200 .275 5.08 6.99
BD .137 .186 3.48 4.72
ECT .019 .034 0.48 0.86
S .003 --- 0.08 ---
Ltr
Inch
Millimeters
A
0.288
7.32
B
0.070
1.78
C 0.155 3.94
Note: If mounting requires
adhesive separate from the solder,
an additional 0.080 inch diameter
contact may be placed in the center
between the pads as an optional
s pot for cement.
