FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL *2N 3819 TRANSISTOR A EFFET DE CHAMP, SILICIUM. CANAL N Preferred device Dispositif recommand - LF amplification Amplification BF - HF amplification Amplification HF pss 2-20mA Yois kHz) 2mS min. Y215 (100 MHz) 1,6mS_ min. C1255 4 pF max. Maximum power dissipation Plastic case TO-92See outline drawing CB-97 on last pages Dissipation de puissance maximale Boitier plastique Voir dessin cot CB-97 dernires pages Prot (mw) 200 150 G j see) 0 100 Weight : 0,3 g. Bottom view 0 25 50) 75 100 Tp (PC) Masse Vue de dassous ABSOLUTE RATINGS (LIMITING VALUES) T. b= +25C (Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION am (Sauf indications contraires} Drain-source voltage Tension drain-source Vv DS 25 : Vv Gate-source voltage Tension grille-source Ves 25 v Gate-drain voltage Tension grille-drain Veo 25 v Gate current Courant de grille Fe 10 mA Power dissipation Dissipation de puissance Prot 200 mW Junction temperature . Temprature de jonction max. Tj 125 c Storage temperature min. T 55 Temprature de stockage max. stg +150 c af. 75-47 V3 THOMSON-CSF Gun 767 SeSsasom 2N 3819 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated} (Saut indications contraires) Test conditions Min. Typ. Max. Conditions de mesure Total gate leakage current Vps = 9 { -2 nA Courant de fuite total de grille Ves =-15V GSS Total gate leakage current ys _ AS Vv I -2 pA Courant de fuite total de grille GS > GSS Tamb = 100C Gate-source breakdown voltage Vps =0 Vv BR)GSS -25 Vv Tension de claquage grille-source lg =-1pA (BR) Drain current Vos = 15V * Courant de drain Ves =0 'pss 2 20 mA Gate-source cut-off voltage Vos = i5V a Tension gritle-source de blocage Ip =2nA Ves off 8 v < Voce = 15V Gate-source voltage DS v ~ _ Tension grilte-source Ip = 200 pA Gs 05 7.6 Vv DYNAMIC CHARACTERISTICS ( for small signals } CARACTERISTIQUES DYNAMIQUES { pour petits signaux } (nput capacitance NDS = , v c 8 pF Capacit dentre GS 11s f = 1MHz Reverse transfer capacitance vDS = . V Cc 4 E Capacit de transfert inverse Gs 12ss Pp f = 1 MHz Forward transfer admittance vDS - . v Y * 2 65 mS Admittance de transfert direct GS | 21 s| , f = 1kHz Voc = 15 V Forward transfer admittance DS Von S Admittance de transfert direct Ves =0 | 21s | 1,6 m f = 100 MHz Vinc = 15 V Output admittance DS * Admittance de sortie Veg = 9 \Y22s| 50 BS f = 1kHz * Pulsed to < 300yns 6 < 2% i p impulsions 2/3 768 2N 3819 STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS ( for small signals ) CARACTERISTIQUES STATIQUES CARACTERISTIQUES DYNAMIQUES ( pour petits signaux } Ip Y 21s (mA) tp & 300 ps (mS) 6 & 2% 101 100 1071 2 468 2 468 2 468 0 1 2 3 4 ~Veslv gs (V) 1072 1071 100 Ip (mA) DYNAMIC CHARACTERISTICS ( for small signals } CARACTERISTIQUES DYNAMIQUES ( pour petits signaux } Criss C12ss {pF) Vps = 15V (pF) Vps = 15V 8 f = 1MHz 8 f = 1MHz 6 6 4 4a PN rm, ] 2 2 S| 10! 40 0 2 4 6 8 1 2 4 0 2 4 6 8 1 4 10' 10 Vestv) 10) 10 ~ Ves (v} 3/3 769