Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3 1Publication Order Number:
BAV74LT1/D
BAV74LT1
Monolithic Dual
Switching Diode
Features
•Pb−Free Package is Available
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage VR50 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 9
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JA Specific Device Code
M = Date Code
MARKING DIAGRAM
12
3
Device Package Shipping†
ORDERING INFORMATION
BAV74LT1 SOT−23 3000 / Tape & Reel
BAV74LT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JA M
BAV74LT1 SOT−23 3000 / Tape & Reel
BAV74LT3 SOT−23 10,000 / Tape & Reel
3
CATHODE
ANODE
1
2
ANODE
BAV74LT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 5.0 Adc) V(BR) 50 − Vdc
Reverse Voltage Leakage Current, (Note 3)
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
IR−
−100
0.1
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD− 2.0 pF
Forward Voltage
(IF = 100 mAdc) VF− 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 )trr − 4.0 ns
3. For each individual diode while the second diode is unbiased.
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
TA = −40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (µA)
Curves Applicable to Each Anode
BAV74LT1
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3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
BAV74LT1
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4
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BAV74LT1/D
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