FEATURES
DTrenchFETr Power MOSFET
DUltra-Low rSS(on)
DESD Protected: 4000 V
DNew MICRO FOOTt Chipscale Packaging Reduces
Footprint Area Profile (0.62 mm) and On-Resistance
Per Footprint Area
APPLICATIONS
DBattery Protection Circuit
– 1-2 Cell Li+/LiP Battery Pack for Portable Devices
Si8900EDB
Vishay Siliconix
New Product
Document Number: 71830
S-20217—Rev. A, 01-Apr-02 www.vishay.com
1
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VSS (V) rSS(on) () ISS (A)
0.024 @ VGS = 4.5 V 7
0.026 @ VGS = 3.7 V 6.8
20 0.034 @ VGS = 2.5 V 5.0
0.40 @ VGS = 1.8 V 5.5
G2
S2
G1
S1
N-Channel
4 k
4 k
MICRO FOOTt
Device Marking:
8900E = P/N Code
xxx = Date/Lot Traceability Code
S2
S2
S2
S2
67
Bump Side View
G2G1
5
4
8
9
S1S1
310
S1S1
21
Backside View
8900E
xxx
Pin 1 Identifier
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VSS 20
Gate-Source Voltage VGS "12 V
_aTA = 25_C75.4
Continuous Drain Current (TJ = 150
_
C)aTA = 85_CISS 5.1 3.9 A
Pulsed Drain Current ISM 10
TA = 25_C 1.8 1
Maximum Power DissipationaTA = 85_CPD0.9 0.5 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 5 sec 55 70
Maximum Junction-to-AmbientaSteady State RthJA 95 120 _C/W
Maximum Junction-to-FootbSteady State RthJF 12 15
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. The Foot is defined as the top surface of the package.
Si8900EDB
Vishay Siliconix New Product
www.vishay.com
2 Document Number: 71830
S-20217—Rev. A, 01-Apr-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VSS = VGS, ID = 250 A 0.45 1.0 V
VSS = 0 V, VGS = "4.5 V "4A
Gate-Body Leakage IGSS VSS = 0 V, VGS = "12 V "10 mA
VSS = 16 V, VGS = 0 V 1
Zero Gate Voltage Drain Current ISS VSS = 16 V, VGS = 0 V, TJ = 85_C 5 A
On-State Drain CurrentaISS(on) VSS = 5 V, VGS = 4.5 V 5 A
VGS = 4.5 V, ISS = 1 A 0.020 0.024
VGS = 3.7 V, ISS = 1 A 0.022 0.026
Drain-Source On-State ResistancearSS(on) VGS = 2.5 V, ISS = 1 A 0.026 0.034
VGS = 1.8 V, ISS = 1 A0.032 0.40
Forward Transconductanceagfs VSS = 10 V, ISS = 1 A 31 S
Dynamicb
Turn-On Delay Time td(on) 3 5
Rise Time trV
SS
= 10 V, R
L
= 10 4.5 7
Turn-Off Delay Time td(off)
VSS = 10 V, RL = 10
ISS ^ 1 A, VGEN = 4.5 V, RG = 6 55 85 s
Fall Time tf15 25
Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
100
10,000 Gate Current vs. Gate-Source Voltage
0
4
8
12
16
20
0 3 6 9 12 15
Gate-Current vs. Gate-Source Voltage
VGS – Gate-to-Source Voltage (V)
0.1
1
10
1,000
VGS – Gate-to-Source Voltage (V)
– Gate Current (IGSS A)
0369 15
TJ = 25_C
TJ = 150_C
– Gate Current (mA)IGSS
IGSS @ 25_C (mA)
12
Si8900EDB
Vishay Siliconix
New Product
Document Number: 71830
S-20217—Rev. A, 01-Apr-02 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.01
0.02
0.03
0.04
0.05
0246810
0
2
4
6
8
10
01234
0.6
0.8
1.0
1.2
1.4
1.6
–50 –25 0 25 50 75 100 125 150
VGS = 5 thru 1.5 V
25_C
TC = 125_C
VGS = 4.5 V
ID = 1 A
VGS = 4.5 V
VGS = 2.5 V
–55_C
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
– On-Resistance (rDS(on) )
ID – Drain Current (A)
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (_C)
(Normalized)
– On-Resistance (rDS(on) )
VGS = 1.8 V
1 V
VGS = 3.7 V
0.00
0.02
0.04
0.06
0.08
0.10
012345
ID = 1 A
On-Resistance vs. Gate-to-Source Voltage
– On-Resistance (rDS(on) )
VGS – Gate-to-Source Voltage (V)
ID = 5 A
–0.4
–0.3
–0.2
–0.1
–0.0
0.1
0.2
–50 –25 0 25 50 75 100 125 150
ID = 250 A
Threshold Voltage
Variance (V)VGS(th)
TJ – Temperature (_C)
Si8900EDB
Vishay Siliconix New Product
www.vishay.com
4 Document Number: 71830
S-20217—Rev. A, 01-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
30
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
20
25
10–310–21 10 60010–1
10–4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef fective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 95_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
1 1000100.10.01
15
10–310–2110–1
10–4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef fective Transient
Thermal Impedance
100
10
Si8900EDB
Vishay Siliconix
New Product
Document Number: 71830
S-20217—Rev. A, 01-Apr-02 www.vishay.com
5
PACKAGE OUTLINE
MICRO FOOT: 10$BUMP (2 X 5, 0.8$mm PITCH)
Recommended Land
Mark on Backside of Die
e
e
10 O 0.30 X 0.31
Note 3
Solder Mask O X 0.40
8900E
xxx
b Diamerter
E
D
S1e
e
S2
Bump Note 2
Silicon
AA2
A1
NOTES (Unless Otherwise Specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are Eutectic solder 63/57 Sn/Pb.
3. Non-solder mask defined copper landing pad.
MILLIMETERS* INCHES
Dim Min Max Min Max
A0.600 0.650 0.0236 0.0256
A10.260 0.290 0.102 0.0114
A20.340 0.360 0.0134 0.0142
b0.370 0.410 0.0146 0.0161
D4.050 4.060 0.1594 0.1598
E1.980 2.000 0.0780 0.0787
e0.750 0.850 0.0295 0.0335
S10.430 0.450 0.0169 0.0177
S20.580 0.600 0.0228 0.0236
* Use millimeters as the primary measurement.
Si8900EDB
Vishay Siliconix New Product
www.vishay.com
6 Document Number: 71830
S-20217—Rev. A, 01-Apr-02
CARRIER TAPE
MICRO FOOT: 10$BUMP ( 2 X 2, 0.8$mm PITCH)
8900E
xxx
8900E
xxx
8900E
xxx
8900E
xxx
8900E
xxx
4.00"0.10
4.00"0.10 2.00"0.05 1.50)0.101.75"0.10
5.50"0.05
12.00 )0.30
*0.10
A0K0B0
5_ MAX
2.21"0.05 0.81"0.05 4.22"0.05
5_ MAX
0.279"0.02
DEVICE ON TAPE ORIENTATION
NOTES:
1. Material: Black Conductive Polycarbonate.
2. Cover tape is conductive pressure sensitive adhesive tape. Resistivity X1.00E+5 /sq.; minimum removal force X 31 oz. min.
3. All Dimensions are in millimeters unless otherwise specified.
VER A0B0K0REEL DIA. LENGTH
–1 2.21 4.22 0.81 178 14 m approx.
QUANTITY PER REEL
T1 3000
