APT50M60JVFR 500V 63A POWER MOS V(R) FREDFET 0.060 S S 27 2 T- D G Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. SO "UL Recognized" ISOTOP (R) * Popular SOT-227 Package * Avalanche Energy Rated * Faster Switching * FAST RECOVERY BODY DIODE D G * Lower Leakage S MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT50M60JVFR UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25C 63 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 568 Watts Linear Derating Factor 4.55 W/C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 252 -55 to 150 C 300 Amps 63 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 31.5A) TYP MAX UNIT Volts 0.060 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 5-2004 Characteristic / Test Conditions 050-7265 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol Ciss APT50M60JVFR Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 250V tf ID = 63A @ 25C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 ns 1235 VDD = 333V, VGS = 15V 2820 ID = 63A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 10 RG = 0.6 Eon UNIT pF 795 560 70 285 20 25 80 ID = 63A @ 25C Turn-off Delay Time MAX 10600 1800 VDD = 250V Rise Time td(off) TYP VGS = 10V Qgs tr MIN J 1700 VDD = 333V, VGS = 15V ID = 63A, RG = 5 2900 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 252 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -63A) 1.3 Volts 15 V/ns dv/ Peak Diode Recovery dt dv/ dt 63 5 t rr Reverse Recovery Time (IS = -63A, di/dt = 100A/s) Tj = 25C 300 Tj = 125C 600 Q rr Reverse Recovery Charge (IS = -63A, di/dt = 100A/s) Tj = 25C 2.6 Tj = 125C 10 IRRM Peak Recovery Current (IS = -63A, di/dt = 100A/s) Tj = 25C 17 Tj = 125C 34 Amps ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7265 Rev A 5-2004 0.25 0.15 0.3 0.1 0 t1 t2 0.05 10-5 Duty Factor D = t1/t2 SINGLE PULSE 0.05 10-4 10-3 C/W 4 Starting Tj = +25C, L = 1.61mH, RG = 25, Peak IL = 63A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID63A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 UNIT Peak TJ = PDM x ZJC + TC 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 200 RC MODEL 0.0516 Power (watts) 0.149 0.0198 180 0.0260F 0.448F 42.3F ID, DRAIN CURRENT (AMPERES) Junction temp. (C) Case temperature. (C) APT50M60JVFR VGS =15 & 10V 8V 160 7.5V 140 120 7V 100 80 6.5V 60 40 6V 20 5.5V 0 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 80 TJ = -55C 60 TJ = +25C 40 TJ = +125C 20 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 60 50 40 30 20 10 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 I D V 1.05 1.00 0.95 0.90 0.85 = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.10 1.2 = 31.5A GS 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.30 1.15 70 NORMALIZED TO = 10V @ 31.5A GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 5-2004 120 V 050-7265 Rev A ID, DRAIN CURRENT (AMPERES) 140 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 10 1mS 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10mS TC =+25C TJ =+150C SINGLE PULSE 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 D = 63A VDS = 100V 12 VDS = 250V 8 4 VDS = 400V 0 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE C, CAPACITANCE (pF) 100S 50 I Coss 1,000 Crss 100 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250 700 V DD R G 600 td(off) 500 V DD R T = 125C J L = 100H 300 J L = 100H 150 100 200 50 100 6,000 30 0 10 70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 7,000 V DD R G 50 70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000 = 333V DD I D T = 125C EON includes diode reverse recovery. 4,000 3,000 Eoff Eon SWITCHING ENERGY (J) SWITCHING ENERGY (J) 5-2004 L = 100H 2,000 30 V = 5 J 5,000 tr td(on) 0 10 050-7265 Rev A tf = 333V = 5 G 400 = 333V = 5 T = 125C 200 tr and tf (ns) td(on) and td(off) (ns) Ciss 10,000 100 1 APT50M60JVFR 20,000 OPERATION HERE LIMITED BY RDS (ON) IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 252 50 = 333V = 63A T = 125C 20,000 J L = 100H EON includes Eoff diode reverse recovery. 15,000 10,000 Eon 5,000 1,000 0 10 30 50 70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT50M60JVFR 10% 90% Gate Voltage Gate Voltage TJ125C td(off) td(on) Drain Current 90% 90% tr T 125C J Drain Voltage tf 10% 0 5% 5% 10% Drain Voltage Switching Energy Switching Energy Drain Current Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT60DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 5-2004 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7265 Rev A 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)