TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
1
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with the
TIP31 Series
●40 W at 25°C Case Temperature
●3 A Continuous Collector Current
●5 A Peak Collector Current
●Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
TIP32
TIP32A
TIP32B
TIP32C
VCBO
-80
-100
-120
-140
V
Collector-emitter voltage (IB = 0)
TIP32
TIP32A
TIP32B
TIP32C
VCEO
-40
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-3 A
Peak collector current (see Note 1) ICM -5 A
Continuous base current IB-1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 40 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Unclamped inductive load energy (see Note 4) ½LIC232 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA
(see Note 5)
IB = 0
TIP32
TIP32A
TIP32B
TIP32C
-40
-60
-80
-100
V
ICES
Collector-emitter
cut-off current
VCE = -80 V
VCE = -100 V
VCE = -120 V
VCE = -140 V
VBE =0
VBE =0
VBE =0
VBE =0
TIP32
TIP32A
TIP32B
TIP32C
-0.2
-0.2
-0.2
-0.2
mA
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB=0
IB=0
TIP32/32A
TIP32B/32C
-0.3
-0.3 mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -1 mA
hFE
Forward current
transfer ratio
VCE = -4 V
VCE = -4 V
IC= -1 A
IC= -3 A (see Notes 5 and 6) 25
10 50
VCE(sat)
Collector-emitter
saturation voltage IB = -375 mA IC= -3 A (see Notes 5 and 6) -1.2 V
VBE
Base-emitter
voltage VCE = -4 V IC= -3 A (see Notes 5 and 6) -1.8 V
hfe
Small signal forward
current transfer ratio VCE = -10 V IC=-0.5A f = 1 kHz 20
|hfe|Small signal forward
current transfer ratio VCE = -10 V IC=-0.5A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3.125 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t ime I C = -1 A
VBE(off) = 4.3 V
IB(on) = -0.1 A
RL = 30 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
0.3 µs
toff Turn-off time 1µs
TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
3
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·01 -0·1 -1·0 -10
hFE - DC Current Gain
10
100
1000 TCS632AA
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - mA
-0·1 -1·0 -10 -100 -1000
VCE(sat) - Collector-Emitter Saturation Voltage - V
-0·01
-0·1
-1·0
-10 TCS632AB
IC = -100 mA
IC = -300 mA
IC = -1 A
IC = -3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·01 -0·1 -1 -10
VBE - Base-Emitter Voltage - V
-0·5
-0·6
-0·7
-0·8
-0·9
-1 TCS632AC
VCE = -4 V
TC = 25°C
TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·01
-0·1
-1·0
-10
-100 SAS632AA
TIP32
TIP32A
TIP32B
TIP32C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50 TIS631AA
