© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
• Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 V
• These are Pb−Free devices
Features
Designed primarily for half-wave ac control applications,
such as motor controls, heating controls and power
supplies; or wherever half−wave silicon gate−controlled,
solid−state devices are needed.
Description
2N6400
Functional Diagram
Pb
Additional Information
Samples
Resources
Datasheet
Pin Out
TO 220AB
CASE 221A
STYLE 3
1
2
3
4
2N640xG
AYWW
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Rating Part Number Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6400
VDRM,
VRRM
50
V
2N6401 10 0
2N6402 200
2N6403 400
2N6404 600
2N6405 800
On-State RMS Current
(180° Conduction Angles; TC = 100°C) IT (RMS) 16 A
Average On-State RMS Current
(180° Conduction Angles; TC = 100°C) IT (AV) 10 A
Peak Non−Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) ITSM 160 A
Circuit Fusing Considerations (t = 8.3 ms) I2t145 A2s
Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 100°C) PGM 20 W
Forward Average Gate Power (t = 8.3 ms, TC = 100°C) PG(AV) 0.5 W
Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 100°C) IGM 2.0 A
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Maximum Ratings † (TJ = 25°C unless otherwise noted)
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Maximum Ratings † (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Thermal Resistance, Junction-to-Case RΘJC 1. 5 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds TL260 °C
† Indicates JEDEC Registered Data
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)
Electrical Characteristics - ON
Characteristic Symbol Min Typ Max Unit
†Peak Repetitive Blocking Current
(VAK = VDRM = VRRM; Gate Open)
TJ = 25°C IDRM,
IRRM
- - 1. 0 µA
TJ = 125°C - - 2.0 mA
†Indicates JEDEC Registered Data
Dynamic Characteristics
Characteristic Symbol Min Typ Max Unit
Critical Rate−of−Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform) TJ= +125°C dv/dt(c) − 50 − V/µs
Characteristic Symbol Min Typ Max Unit
†Peak Forward On−State Voltage
(ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM − – 1. 7 V
†Gate Trigger Voltage (Continuous DC), All Quadrants
(Continuous dc) (VD = 12 Vdc, RL = 100 Ω)
TC = 25°C
IGT
− 9.0 30
mA
TC= -40°C − − 60
†Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω)
TC = 25°C
VGT
− 0.7 1. 5
V
TC= -40°C − − 2.5
Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ω) TC = +125°C VGD 0.2 − − V
†Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
TC = 25°C
IH
−18 40
mA
TC= -40°C − − 60
Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) tgt −1. 0 – µs
Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)
TC = 25°C
tq
−15 −
µs
TJ= +125°C − 35 −
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Voltage Current Characteristic of SCR
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
I
I
I
°
α °
α = CONDUCTION ANGLE
α
°
°
dc
°
Figure 1. Current Derating Figure 2. Maximum On-State Power Dissipation
TJ ≈ °C
IT(AV)
7.0
α = CONDUCTION ANGLE
α
°
α °
°
°
°
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Figure 4. Maximum Non−Repetitive Surge CurrentFigure 3. On−State Characteristics
Figure 5. Thermal Response
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Figure 6. Typical Gate Trigger Current vs. Pulse Width
Typical Characteristics
Figure 7. Typical Gate Trigger Current vs. Junction Temperature
Figure 8. Typical Gate Trigger Voltage vs. Junction Temperature Figure 9. Typical Holding Current vs. Junction Temperature
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Dimensions Part Marking System
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Dim
Inches Millimeters
Min Max Min Max
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1. 15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1. 1 5 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1. 1 5 −−−
Z −−− 0.080 −−− 2.04
Ordering Information
Device Package Shipping
2N6400G
TO-220AB
(Pb-Free)
500 Units / Box
2N6401G
2N6402G
2N6403G
2N6403TG 50 Units / Rail
2N6404G
500 Units / Box
2N6405G
A
K
L
V
G
D
N
Z
H
Q
FB
12 3
4
SEATING
PLANE
S
R
J
U
TC
Pin Assignment
1 Cathode
2 Anode
3 Gate
4 Anode
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
TO 220AB
CASE 221A
STYLE 3
1
2
3
4
2N640xG
AYWW
x= 0, 1, 2, 3, 4 or 5
A= Assembly Location
Y= Year
WW = Work Week
G= Pb Free Package
