1N5221B~1N5267B Voltage Range 2.4 to 75 Volts Zener diode DO-35 Features 1.High reliability 2.Very sharp reverse characteristic 3.Low reverse current level 4.Vz-tolerance*5% 1.02(26.0) MIN .079(2.0) MAX Applications Voltage stabilization .165(4.2) MAX 1.02(26.0) MIN .020(.52) TYP Absoluto Maximum Ratings 0 Tj=25 C Dimensions in inches and (millimeters) Symbol Value Unit PD 500 mW Z-current lz PD/Vz mA Junction temperature Tj 200 0C Tstg -65~+200 0C Parameter Test Conditions Type Tamb*750C Power dissipation Storage temperature range Maximum Thermal Resistance Tj=250C Parameter Junction ambient Test Condltions Symbol Value Unit I=9.5mm(3/8") TL=constant RthJA 300 K/W Electrcal Characteristics Tj=250C Parameter Forward voltage Test Conditions lF=200mA Type Symbol VF Min Typ Max Unit 1.1 V Type 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B Vznom V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 lzt for Vzt and Rzt mA * 20 <30 20 <30 20 <30 20 <30 20 <29 20 <28 20 <24 20 <23 20 <22 20 <19 20 <17 20 <11 20 <7 20 <7 20 <5 20 <6 20 <8 20 <8 20 <10 20 <17 20 <22 20 <30 9.5 <13 9.0 <15 8.5 <16 7.8 <17 7.4 <19 7.0 <21 6.6 <23 6.2 <25 5.6 <39 5.2 <33 5.0 <35 4.6 <41 4.5 <44 4.2 <49 3.8 <58 3.4 <70 3.2 <80 3.0 <93 2.7 <105 2.5 <125 2.2 <150 2.1 <170 2.0 <185 1.8 <230 1.7 <270 Rzk * <1200 <1250 <1300 <1400 <1600 <1600 <1700 <1900 <2000 <1900 <1600 <l600 <1600 <1000 <750 <500 <500 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <700 <700 <800 <900 <1000 <1100 <1300 <1400 <1400 <1600 <1700 at lzk mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 lR at VR uA <100 <100 <75 <75 <50 <25 <15 <10 <5 <5 <5 <5 <5 <5 <3<3 <3 <3 <3 <3 <2 <1 <0.5 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 15 16 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 58 1)Based on DC-measurement at thermal equilibrium while maintaining the lead temperature (TL)at 300C, 9.5mm(3/8") from the diode body. TKvz %/K <-0.085 <-0.085 <-0.080 <-0.080 <-0.075 <-0.070 <-0.065 <-0.060 <+0.055 <+0.030 <+0.030 <+0.038 <+0.038 <+0.045 <+0.050 <+0.058 <+0.062 <+0.065 <+0.068 <+0.075 <+0.076 <+0.077 <+0.079 <+0.082 <+0.082 <+0.083 <+0.084 <+0.085 <+0.086 <+0.086 <+0.087 <+0.088 <+0.089 <+0.090 <+0.091 <+0.091 <+0.092 <+0.093 <+0.094 <+0.095 <+0.095 <+0.096 <+0.096 <+0.097 <+0.097 <+0.097 <+0.098