VS-10BQ015-M3/5BT - Vishay Semiconductors

VS-10BQ015-M3

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Revision: 29-May-12 1Document Number: 93349

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Schottky Rectifier, 1.0 A

FEATURES

• Low forward voltage drop

• Guard ring for enhanced ruggedness and long

term reliability

• 125 °C TJ operation (VR < 5 V)

• Optimized for OR-ing applications

• High frequency operation

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The VS-10BQ015-M3 surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. The proprietary

barrier technology allows for reliable operation up to 125 °C

junction temperature. Typical applications are in disk drives,

switching power supplies, converters, freewheeling diodes,

battery charging, and reverse battery protection.

PRODUCT SUMMARY

Package SMB

IF(AV) 1.0 A

VR15 V

VF at IF0.21 V

IRM 35 mA at 100 °C

TJ max. 125 °C

Diode variation Single die

EAS 1.0 mJ

Cathode Anode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 1.0 A

VRRM 15 V

IFSM tp = 5 μs sine 140 A

VF1.0 Apk, TJ = 125 °C 0.21 V

TJRange - 55 to 125 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-10BQ015-M3 UNITS

Maximum DC reverse voltage VR15 V

Maximum working peak reverse voltage VRWM 25

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

See fig. 5 IF(AV) 50 % duty cycle at TL = 134 °C, rectangular waveform 1.0 A

Maximum peak one cycle

non-repetitive surge current

See fig. 7

IFSM

5 μs sine or 3 μs rect. pulse Following any rated load

condition and with rated

VRRM applied

140

10 ms sine or 6 ms rect. pulse 40

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 2 mH 1.0 mJ

Repetitive avalanche current IAR

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A

VS-10BQ015-M3

www.vishay.com Vishay Semiconductors

Revision: 29-May-12 2Document Number: 93349

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width = 300 μs, duty cycle = 2 %

Notes

(1) thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop

See fig. 1 VFM (1)

1 A TJ = 25 °C 0.33

2 A 0.39

1 A TJ = 125 °C 0.21

2 A 0.29

Maximum reverse leakage current

See fig. 2 IRM

TJ = 25 °C VR = Rated VR

0.5 mA

TJ = 100 °C 35

Threshold voltage VF(TO) TJ = TJ maximum -V

Forward slope resistance rt-m

Typical junction capacitance CTVR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF

Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH

Maximum voltage rate of change dV/dt Rated VR10 000 V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature range TJ (1) - 55 to 125 °C

Maximum storage temperature range TStg - 55 to 150

Maximum thermal resistance,

junction to lead RthJL (2) DC operation

See fig. 4 36

°C/W

Maximum thermal resistance,

junction to ambient RthJA DC operation 80

Approximate weight 0.10 g

0.003 oz.

Marking device Case style SMB (similar to DO-214AA) 1C

dPtot

dTJ

------------- 1

RthJA

--------------<

VS-10BQ015-M3

www.vishay.com Vishay Semiconductors

Revision: 29-May-12 3Document Number: 93349

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

VFM - Forward Voltage Drop (V)

IF - Instantaneous Forward Current (A)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

0.1

Tj = 25°C

TJ = 100 °C

TJ = 125 °C

TJ = 75 °C

Reverse Voltage (V)

IR - Reverse Current (mA)

0 3 6 9 12 15

0.01

0.1

100

25 °C

100 °C

75 °C

50 °C

1000

100

VR - Reverse Voltage (V)

CT - Junction Capacitance (pF)

15312

t1 - Rectangular Pulse Duration (s)

ZthJC - Thermal Impedance (°C/W)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

100

Single pulse

(thermal resistance)

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

PDM

Notes:

1. Duty factor D = t1/t2

2. Peak TJ = PDM x ZthJC + TC

VS-10BQ015-M3

www.vishay.com Vishay Semiconductors

Revision: 29-May-12 4Document Number: 93349

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 5 - Maximum Average Forward Current vs.

Allowable Lead Temperature

Fig. 6 - Maximum Average Forward Dissipation vs.

Average Forward Current

Fig. 7 - Maximum Non-Repetitive Surge Current

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

F(AV)

Average

Forward Current (A)

Allowable Case Temperature (°C)

0.0 0.3 0.6 0.9 1.2 1.5

100

110

Square wave (D = 0.50)

80 % rated VR applied

see note (1)

D = 0.75

D = 0.20

D = 0.25

D = 0.33

D = 0.50

IF(AV) - Average Forward Current (A)

Average Power Loss (W)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

0.2

0.3

0.4

D = 0.75

D = 0.20

D = 0.25

D = 0.33

D = 0.50

RMS limit

tp - Square Wave Pulse Duration (µs)

100

1000

IFSM - Non-Repetitive Surge Current (A)

10 100 1000 10 000

At any rated load condition and

with rated VRRM applied

following surge

VS-10BQ015-M3

www.vishay.com Vishay Semiconductors

Revision: 29-May-12 5Document Number: 93349

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-10BQ015-M3/5BT 5BT 3200 13" diameter plastic tape and reel

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95401

Part marking information www.vishay.com/doc?95403

Packaging information www.vishay.com/doc?95404

2- Current rating

3- B = SMB

4- Q = Schottky “Q” series

5- Voltage rating (015 = 15 V)

1- Vishay Semiconductors product

Device code

51 32 4 6

VS- 10 B Q 015 -M3

- Environmental digit:

-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 02-Oct-12 1Document Number: 91000

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operating parameters, including typical parameters, must be validated for each customer application by the customer’s

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