DS30833 Rev. 7 - 2
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BC846AS
© Diodes Incorporated
BC846AS
DUAL NPN SURFACE MO UNT SMALL SIGNAL TRANSISTOR
Features
• Ideally Suited for Automatic Insertion
• For Switching and AF Amplifier Applications
• Complementary PNP Type Available (BC856AS)
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J ⎯ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimensions in mm
C
1
654
3
2
1
B
2
E
2
E
1
B
1
C
2
A
M
JL
D
BC
H
K
F
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 65 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation (Note 2) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 2) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, Tstg -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) V(BR)CBO 80 — — V
IC = 10μA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 65 — — V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO 6 — — V
IE = 1μA, IC = 0
DC Current Gain (Note 3) hFE 110 — 220 —
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 90
200 250
600 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700
900 — mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) 580
— 660
— 700
770 mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 3) ICES
ICBO
ICBO
—
—
—
—
—
—
15
15
5.0
nA
nA
µA
VCE = 80V
VCB = 40V
VCB = 30V, TA = 150°C
Gain Bandwidth Product fT100 — — MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCB — 2.0 — pF
VCB = 10V, f = 1.0MHz
Notes: 1. No purposefully added lead.
2. Device mounted on FR-4 PCB, pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.