MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401T) Ultra-Small Surface Mount Package SOT-523 Mechanical Data * * * * * * * * Dim Min Max Typ A A 0.15 0.30 0.22 C B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G 0.90 1.10 1.00 B C TOP VIEW Case: SOT-523, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 2T Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) B E G H K N J M L D C H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 All Dimensions in mm B Maximum Ratings E @ TA = 25C unless otherwise specified Characteristic Symbol MMBT4403T Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30273 Rev. 2 - 2 1 of 2 MMBT4403T NEW PRODUCT Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO -40 3/4 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 3/4 V IE = -100mA, IC = 0 ICEX 3/4 -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL 3/4 -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 3/4 3/4 3/4 300 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base- Emitter Saturation Voltage VBE(SAT) -0.75 3/4 -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb 3/4 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb 3/4 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 3/4 Output Admittance hoe 1.0 100 mS fT 200 3/4 MHz Delay Time td 3/4 15 ns Rise Time tr 3/4 20 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 30 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = -100mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information (Note 3) Note: Device Packaging Shipping MMBT4403T-7 SOT-523 3000/Tape & Reel 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2TYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30273 Rev. 2 - 2 2 of 2 MMBT4403T