MPS2222A
Document Number 85127
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
1
18855
123
2
3
1E
B
C
Small Signal Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for switch-
ing and amplifier applications.
• On special request, this transistor is also manufac-
tured in the pin configuration TO-18.
• This transistor is also available in the SOT-23 case
with the type designation MMBT2222A.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
E6/Bulk - 5 K per container, 20 K/box
E7/4 K per Ammo mag., 20 K/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
Part Ordering code Remarks
MPS2222A MPS2222A-BULK or MPS2222A-TAP Bulk / Ammopack
Parameter Test condition Symbol Value Unit
Collector - base voltage VCBO 75 V
Collector - emitter voltage VCEO 40 V
Emitter - base voltage VEBO 6.0 V
Collector current IC600 mA
Power dissipation TA = 25 °C Ptot 625 mW
Derate above 25 °C Ptot 5.0 mW/°C
TC = 25 °C Ptot 1.5 W
Derate above 25 °C Ptot 12 mW/°C
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RθJA 200 °C/W
Thermal resistance junction to
case
RθJC 83.3 °C/W
Junction temperature Rj150 °C
Storage temperature range TS- 55 to + 150 °C
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Document Number 85127
Rev. 1.2, 02-Nov-04
VISHAY
MPS2222A
Vishay Semiconductors
Electrical DC Characteristics
1) Pulse test: pulse width ≤ 300 µs, cycle ≤ 2 %
Electrical AC Characteristics
Parameter Test condition Symbol Min Ty p Max Unit
DC current gain VCE = 10 V, IC = 0.1 mA hFE 35
VCE = 10 V, IC = 1 mA hFE 50
VCE = 10 V, IC = 10 mA hFE 75
hFE 35
VCE = 10 V, IC = 150 mA 1) hFE 100 300
VCE = 1.0 V, IC = 150 mA 1) hFE 50
VCE = 10 V, IC = 500 mA 1) hFE 40
Collector - base breakdown
voltage
IC = 10 µA, IE = 0 V(BR)CBO 75 V
Collector - emitter breakdown
voltage 1)
IC = 10 mA, IB = 0 V(BR)CEO 40 V
Emitter - base breakdown
voltage
IE = 10 µA, IC = 0 V(BR)EBO 6.0 V
Collector - emitter saturation
voltage 1)
IC = 150 mA, IB = 15 mA VCEsat 0.3 V
IC = 500 mA, IB = 50 mA VCEsat 1.0 V
Base - emitter saturation voltage IC = 150 mA, IB = 15 mA VBEsat 0.6 1.2 V
IC = 500 mA, IB = 50 mA VBEsat 2.0 V
Collector-emitter cut-off current VEB = 3 V, VCE = 60 V ICEV 10 nA
Collector-base cut-off current VCB = 60 V, IE = 0 ICBO 0.01 µA
VCB = 50 V, IE = 0, TA = 125 °C ICBO 10 µA
Emitter-base cut-off current VEB = 3 V, IC = 0 IEBO 100 nA
Base cut - off current VCE = 60 V, VEB = 3.0 V IBL 20 nA
Parameter Test condition Symbol Min Ty p Max Unit
Input impedance VCE = 10 V, IC = 1 mA, f = 1 kHz hie 2.0 8.0 kΩ
VCE = 10 V, IC = 10 mA, f = 1 kHz hie 0.25 1.25 kΩ
Voltage feedback ratio VCE = 10 V, IC = 1 mA, f = 1 kHz hre 8 x 10-4
VCE = 10 V, IC = 10 mA, f = 1 kHz hre 4 x 10-4
Current gain - bandwidth
product
VCE = 20 V, IC = 20 mA,
f = 100 MHz
fT300 MHz
Output capacitance VCB = 10 V, f = 1 MHz, IE = 0 COBO 8.0 pF
Input capacitance VEB = 0.5 V, f = 1 MHz, IC = 0 CIBO 25 pF
Output admittance VCE = 10 V, IC = 1 mA, f = 1 kHz hoe 5.0 35 µS
VCE = 10 V, IC = 10 mA, f = 1 kHz hoe 25 200 µS
Small signal current gain VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 50 300
VCE = 10 V, IC = 10 mA, f = 1 kHz hfe 75 375
Collector base time constant IE = 20 mA, VCB = 20 V, f = 31.8
MHz
rb’CC150 ps
Noise figure VCE = 10 V, IC = 100 µA,
RS = 1 kΩ, f = 1 kHz
NF 4.0 dB
VISHAY
MPS2222A
Document Number 85127
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
3
Switching Characteristics
Parameter Test condition Symbol Min Ty p Max Unit
Delay time (see fig.1) IB1 = 15 mA, IC = 150 mA,
VCC = 30 V, VBE = - 0.5 V
td10 ns
Rise time (see fig.1) IB1 = 15 mA, IC = 150 mA,
VCC = 30 V, VBE = - 0.5 V
tr25 ns
Storage time (see fig.2) IB1 = IB2 = 15 mA, IC = 150 mA,
VCC = 30 V
ts225 ns
Fall time (see fig.2) IB1 = IB2 = 1 mA, IC = 10 mA,
VCC = 30 V
tf60 ns
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
<2ns
0
+16 V
-2 V
*) total shunt capacitance of test jig,
connectors and oscilloscope
scope rise time<4ns
1kΩ
200 Ω
+30V
C<10pF*)
S
1 to 100 µs
Duty cycle = 2 %
18971
*) total shunt capacitance of test jig,
connectors and oscilloscope
scope rise time<4ns
1kΩ
200 Ω
+30V
C<10pF*)
S
18972
<20ns
0
+16V
-14V
1to100µs
Duty cycle = 2 %
-4V
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Document Number 85127
Rev. 1.2, 02-Nov-04
VISHAY
MPS2222A
Vishay Semiconductors
Package Dimensions in mm (Inches)
Bottom
View
4.6 (0.181) 3.6 (0.142)
min. 12.5 (0.492) 4.6 (0.181)
max. 0.55 (0.022)
2.5 (0.098)
18776
VISHAY
MPS2222A
Document Number 85127
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
5
Packaging for Radial Taping
Dimensions in mm
±1 12.7
±1
0.3
± 0.2
±1
-0.5
18
12 ±
0.3
9
± 0.5
4
± 0.2
12.7
± 0.2
6.3
± 0.7
5.08
± 0.7
2.54
+ 0.6
- 0.1
Measure limit over 20 index - holes: ± 1
"H"
Vers. Dim. "H"
FSZ 27 ± 0.5
0.9 max
±2
18787
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Document Number 85127
Rev. 1.2, 02-Nov-04
VISHAY
MPS2222A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
