MPS2222A Vishay Semiconductors Small Signal Transistor (NPN) Features C 3 * NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. * On special request, this transistor is also manufactured in the pin configuration TO-18. * This transistor is also available in the SOT-23 case with the type designation MMBT2222A. 2 B 1 2 3 E 1 18855 Mechanical Data Case: TO-92 Plastic case Weight: approx. 177 mg Packaging Codes/Options: E6/Bulk - 5 K per container, 20 K/box E7/4 K per Ammo mag., 20 K/box Parts Table Part Ordering code MPS2222A Remarks MPS2222A-BULK or MPS2222A-TAP Bulk / Ammopack Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Unit Collector - base voltage Parameter Test condition VCBO 75 V Collector - emitter voltage VCEO 40 V Emitter - base voltage VEBO 6.0 V IC 600 mA Ptot 625 mW Collector current Power dissipation TA = 25 C Derate above 25 C Ptot 5.0 mW/C TC = 25 C Ptot 1.5 W Derate above 25 C Ptot 12 mW/C Maximum Thermal Resistance Symbol Value Unit Thermal resistance junction to ambient air Parameter Test condition RJA 200 C/W Thermal resistance junction to case RJC 83.3 C/W Junction temperature Rj 150 C Storage temperature range TS - 55 to + 150 C Document Number 85127 Rev. 1.2, 02-Nov-04 www.vishay.com 1 MPS2222A VISHAY Vishay Semiconductors Electrical DC Characteristics Parameter DC current gain Symbol Min VCE = 10 V, IC = 0.1 mA Test condition hFE 35 VCE = 10 V, IC = 1 mA hFE 50 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 1.0 V, IC = 150 mA 1) 1) VCE = 10 V, IC = 500 mA 1) hFE 75 hFE 35 hFE 100 hFE 50 hFE 40 Typ Max Unit 300 Collector - base breakdown voltage IC = 10 A, IE = 0 V(BR)CBO 75 V Collector - emitter breakdown IC = 10 mA, IB = 0 V(BR)CEO 40 V Emitter - base breakdown voltage IE = 10 A, IC = 0 V(BR)EBO 6.0 V Collector - emitter saturation IC = 150 mA, IB = 15 mA VCEsat 0.3 V IC = 500 mA, IB = 50 mA VCEsat 1.0 V Base - emitter saturation voltage IC = 150 mA, IB = 15 mA VBEsat 1.2 V IC = 500 mA, IB = 50 mA VBEsat 2.0 V VEB = 3 V, VCE = 60 V ICEV 10 nA voltage 1) voltage 1) Collector-emitter cut-off current 0.6 VCB = 60 V, IE = 0 ICBO 0.01 A VCB = 50 V, IE = 0, TA = 125 C ICBO 10 A Emitter-base cut-off current VEB = 3 V, IC = 0 IEBO 100 nA Base cut - off current VCE = 60 V, VEB = 3.0 V IBL 20 nA Collector-base cut-off current 1) Pulse test: pulse width 300 s, cycle 2 % Electrical AC Characteristics Parameter Test condition Symbol Min Max Unit VCE = 10 V, IC = 1 mA, f = 1 kHz hie 2.0 8.0 k VCE = 10 V, IC = 10 mA, f = 1 kHz hie 0.25 1.25 VCE = 10 V, IC = 1 mA, f = 1 kHz hre 8 x 10 VCE = 10 V, IC = 10 mA, f = 1 kHz hre 4 x 10-4 Current gain - bandwidth product VCE = 20 V, IC = 20 mA, f = 100 MHz fT Output capacitance VCB = 10 V, f = 1 MHz, IE = 0 COBO Input capacitance VEB = 0.5 V, f = 1 MHz, IC = 0 CIBO 25 pF Output admittance VCE = 10 V, IC = 1 mA, f = 1 kHz hoe 5.0 35 S VCE = 10 V, IC = 10 mA, f = 1 kHz hoe 25 200 S 300 Input impedance Voltage feedback ratio Small signal current gain Typ 300 k -4 MHz 8.0 pF VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 50 VCE = 10 V, IC = 10 mA, f = 1 kHz hfe 75 Collector base time constant IE = 20 mA, VCB = 20 V, f = 31.8 MHz rb'CC 150 ps Noise figure VCE = 10 V, IC = 100 A, RS = 1 k, f = 1 kHz NF 4.0 dB www.vishay.com 2 375 Document Number 85127 Rev. 1.2, 02-Nov-04 MPS2222A VISHAY Vishay Semiconductors Switching Characteristics Max Unit Delay time (see fig.1) Parameter IB1 = 15 mA, IC = 150 mA, VCC = 30 V, VBE = - 0.5 V Test condition td 10 ns Rise time (see fig.1) IB1 = 15 mA, IC = 150 mA, VCC = 30 V, VBE = - 0.5 V tr 25 ns Storage time (see fig.2) IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30 V ts 225 ns Fall time (see fig.2) IB1 = IB2 = 1 mA, IC = 10 mA, VCC = 30 V tf 60 ns Duty cycle = 2 % 1 to 100 s Symbol Min Typ + 30 V 200 +16 V 1 k 0 C S < 10 pF *) -2 V < 2 ns scope rise time < 4 ns *) total shunt capacitance of test jig, connectors and oscilloscope 18971 Figure 1. Turn-On Time Duty cycle = 2 % 1 to 100 s + 30 V + 16 V 200 0 1 k - 14 V C S < 10 pF *) < 20 ns -4V 18972 scope rise time < 4 ns *) total shunt capacitance of test jig, connectors and oscilloscope Figure 2. Turn-Off Time Document Number 85127 Rev. 1.2, 02-Nov-04 www.vishay.com 3 MPS2222A VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) Bottom View www.vishay.com 4 18776 Document Number 85127 Rev. 1.2, 02-Nov-04 MPS2222A VISHAY Vishay Semiconductors Packaging for Radial Taping Dimensions in mm 2 12.7 1 "H" 0.5 9 12 0.3 18 1 -0.5 0.3 0.2 1 Vers. Dim. "H" FSZ 5.08 0.7 4 0.2 2.54 27 0.5 0.9 max + 0.6 - 0.1 6.3 0.7 12.7 0.2 Measure limit over 20 index - holes: 1 18787 Document Number 85127 Rev. 1.2, 02-Nov-04 www.vishay.com 5 MPS2222A VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85127 Rev. 1.2, 02-Nov-04