BAS16TDW MMBD4148TDW Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 150m AMPERES P b Lead(Pb)-Free 75 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 6 5 1 2 4 3 SOT-363 Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) SOT-363 Outline Dimensions Unit:mm A 6 5 SOT-363 4 B C 1 2 D 3 E H K J WEITRON http://www.weitron.com.tw L M 1/3 Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 09-Feb-06 BAS16TDW MMBD4148TDW Maximum Ratings@ TA= 25C unless otherwise specified Characteristic Symbol Value Unit VRM 100 V VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current (Note 1) IFM 300 mA Average Rectified Output Current (Note 1) IO 150 mA IFSM 2.0 1.0 A PD 200 mW RJA 625 C/W Tj +150 C TSTG -55 to +150 C Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current@ t = 1.0s @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 2) IR = 100A Forward Voltage (Note 2) IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Symbol Min Max Unit V(BR)R 75 - V VF - 0.715 0.855 1.0 1.25 V A A A nA Reverse Current (Note 2) VR = 75V VR = 75V, Tj = 150C VR = 25V, Tj = 150C VR = 20V IR - 1.0 50 30 25 Total Capacitance VR = 0V, f = 1.0MHz CT - 2.0 pF Reverse Recovery Time IF= IR=10mA, Irr=0.1 x IR, RL=100 Trr - 4.0 ns Notes:2. Short duration test pulse used to minimize self-heating effect. WEITRON http://www.weitron.com.tw 2/3 09-Feb-06 BAS16TDW MMBD4148TDW Device Marking Item Marking BAS16TDW MMBD4148TDW Eqivalent Circuit diagram 1 2 3 KA2 6 5 4 Typical Characteristics 1 10000 0.1 IR,INSTANTANEOUS REVERSE CURRENT (nA) IF,INSTANTANEOUS FORWARD CURRENT (mA) TA = 150C TA = 150C TA = 75C TA = 25C TA = 0C TA = -40C 0.01 0.001 1.0 0.5 1.5 0 VF,INSTANTANEOUS FORWARD VOLTAGE (V) TA = 75C TA = 25C 10 TA = 0C 1 TA = -40C 0.1 20 0 60 40 80 100 Fig.2 Typical Reverse Characteristics 300 2.0 f = 1.0MHz 1.8 250 1.6 1.4 Pd,POWER DISSIPATION (mW) CT,TOTAL CAPACITANCE (pF) 100 VR, REVERSE VOLTAGE(V) Fig.1 Typical Forward Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0.0 TA = 125C 1000 0 10 30 20 VR,REVERSEVOLTAGE(V) WEITRON 150 100 50 0 40 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig.4 Power Derating Curve, Total Package Fig.3 Typical Capacitancevs .Reverse Voltage http://www.weitron.com.tw 200 3/3 09-Feb-06