General Purpose Transistor
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Absolute Maximum Ratings
Features:
• NPN silicon planar epitaxial transistors
• Generalpurposetransistors,bestsuitedforuseindriverstagesofaudioampliers,oftaperecorders.
Lownoiseinputstages,Hi-Fiampliers,signalprocessingcircuitsoftelevisionreceivers
Parameters Symbol Value Unit
Collector Emitter Voltage VCEO 30
VCollector Base Voltage VCBO
Emitter Base Voltage VEBO 5
Collector Current Continuous IC100 mA
Power Dissipation at Ta = 25°C
Derate above 25°C PD
625
5
mW
mW/°C
Power Dissipation at TC = 25°C
Derate above 25°C
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range Tj, Tstg -55 to +150 °C
Thermal Resistance
Junction to Ambient Rth (j-a) 200
°C/W
Junction to Case Rth (j-c) 83.3
Pin Conguration:
1.Emitter
2.Base
3.Collector
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Page <2> V1.003/01/13
General Purpose Transistor
Electrical Characteristics (Ta = 25°C unless otherwise specied)
Parameters Symbol Test Condition Min. Typ. Max. Units
Collector Emitter Voltage VCEO IC = 1mA, IB = 0
30
- -
V
Collector Base Voltage VCBO IC = 10µA, IE = 0 - -
Emitter Base Voltage VEBO IE = 10µA, IC = 0 5 - -
Collector Cut off Current ICBO
VCB = 30V, IE = 0
VCB = 30V, IE = 0,
Ta = +125°C
- - 15
5
nA
µA
Emitter Cut off Current IEBO VEB = 4V, IC = 0 - - 15 nA
DC Current Gain hFE
VCE = 5V, IC = 10µA
VCE = 5V, IC = 2mA
100
420
270
500
-
800 -
Collector Emitter Saturation Voltage VCE (sat)
IC = 10mA, IB=0.5mA
IC = 10mA, IB = see
note1
IC = 100mA, IB = 5mA*
-
0.075
0.3
0.25
0.25
0.6
0.6
V
Base Emitter Saturation Voltage VBE (sat) IC = 10mA, IB = 5mA* - 1.1 -
Base Emitter on Voltage VBE (on)
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 2mA, VCE = 5V
0.55
0.52
0.55
0.62
0.7
Dynamic Characteristics
Transition Frequency fT
IC = 10mA, VCE = 5V,
f = 100MHz - 250 - MHz
Collector Output Capacitance Ccbo
IE = 0, VCE = 10V
f = 1MHz -2.5 - pF
Noise Figure
NF1*
NF2
VCE = 5V, IC = 200µA
RS=2KΩ,
f = 30Hz -15kHz
VCE = 5V, IC = 200µA
RS=100KΩ,f=1kHz
-0.6 2.5
10 dB
Small Signal Current Gain hfe
VCE = 5V, IC = 2mA
f = 1kHZ 450 600 900 -
Note 1: IB is value for which IC = 11mA at VCE = 1V
*PulseCondition:=PulseWidth≤300μs,DutyCycle≤2%.
General Purpose Transistor
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Description Part Number
Transistor, NPN, TO-92 BC549C
Part Number Table
Pin Conguration:
1.Emitter
2.Base
3.Collector
Dimensions Min. Max.
A4.32 5.33
B4.45 5.2
C3.18 4.19
D0.41 0.55
E0.35 0.5
F 5°
G
1.14
1.4
H1.53
K12.7 -
L1.982 2.082
Dimensions : Millimetres