IRFP064N
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 –– – –– – V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.008 ΩVGS = 10V, ID = 59A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 42 ––– ––– S VDS = 25V, I D = 59A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 10 0 V GS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– –– – 170 ID = 59A
Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– – – – 74 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 1 4 ––– V DD = 28V
trRise Time ––– 100 ––– I D = 59A
td(off) Turn-Off Delay Time ––– 43 ––– R G = 2.5Ω
tfFall Time ––– 70 ––– RD = 0.39Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 4000 ––– VGS = 0V
Coss Output Capacitance ––– 1300 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
5.0
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
VDD = 25V, starting TJ = 25°C, L = 190µH
RG = 25Ω, IAS = 59A. (See Figure 12)
ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 59A, VGS = 0V
trr Reverse Recovery Time ––– 110 1 7 0 ns TJ = 25°C, IF = 59A
Qrr Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
110
390
13
Uses IRF3205 data and test conditions
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