PD - 9.1383A IRFP064N HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008 G ID = 110A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 110 80 390 200 1.3 20 480 59 20 5.0 -55 to + 175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient http://store.iiic.cc/ Typ. Max. Units --- 0.24 --- 0.75 --- 40 C/W 8/25/97 IRFP064N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Qgd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 --- --- 2.0 42 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.057 --- --- --- --- --- --- --- --- --- --- 14 100 43 70 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 5.0 LS Internal Source Inductance --- 13 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 4000 1300 480 V(BR)DSS V(BR)DSS/T J I GSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.008 VGS = 10V, ID = 59A 4.0 V VDS = VGS , ID = 250A --- S V DS = 25V, I D = 59A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 170 ID = 59A 32 nC VDS = 44V 74 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- I D = 59A ns --- RG = 2.5 --- RD = 0.39, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- 110 --- --- 390 --- --- --- --- 110 450 1.3 170 680 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 59A, VGS = 0V TJ = 25C, IF = 59A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 190H Uses IRF3205 data and test conditions RG = 25, IAS = 59A. (See Figure 12) I SD 59A, di/dt 290A/s, VDD V(BR)DSS , TJ 175C Caculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 http://store.iiic.cc/ IRFP064N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP I , D ra in -to -S o u rc e C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D TOP 100 4.5 V 2 0 s PU LSE W ID TH TC = 2 5C 10 0.1 1 10 A 100 4.5V 100 0.1 V D S , D rain-to-S ource V oltage (V ) R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D r ain- to-S ourc e C urre nt (A ) 2.0 TJ = 2 5 C TJ = 1 7 5 C 100 10 V DS = 2 5 V 2 0 s P U L SE W ID TH 5 6 7 8 9 10 A 100 Fig 2. Typical Output Characteristics 1000 4 1 V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics 1 20 s P UL SE W IDTH TC = 17 5C 10 10 A I D = 98 A 1.5 1.0 0.5 V G S = 10 V 0.0 V G S , Ga te-to-S o urce V oltage (V ) Fig 3. Typical Transfer Characteristics http://store.iiic.cc/ -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T emperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRFP064N 20 V GS C iss C rss C oss 7000 C , C a p a c ita n c e (p F ) 6000 = = = = 0V, f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd V G S , G a te -to -S o u rc e V o lta g e (V ) 8000 I D = 5 9A V DS = 44 V V DS = 28 V V DS = 11 V 16 C i ss 5000 12 C os s 4000 3000 2000 C rs s 8 4 1000 0 A 1 10 FO R TES T C IR CU IT SEE FIG U R E 13 0 0 100 60 90 120 150 A 180 Q G , Total Gate Charge (nC ) V D S , Drain-to-Source V oltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 O PER ATION IN TH IS AR EA LIM ITE D BY R D S(o n) 10s I D , D ra in C u rre n t (A ) IS D , R e ve rs e D ra in C u rre n t (A ) 30 TJ = 175 C 100 T J = 2 5C 100 1 00s 1m s 10 10m s VG S = 0 V 10 0.6 1.0 1.4 1.8 2.2 2.6 A T C = 25 C T J = 17 5C S ing le Pulse 1 1 3.0 A 10 V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area http://store.iiic.cc/ 100 IRFP064N VDS 120 VGS LIMITED BY PACKAGE RD D.U.T. RG 100 + ID , Drain Current (A) - VDD 80 10V Pulse Width 1 s Duty Factor 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 90% 20 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case http://store.iiic.cc/ 1 IRFP064N L VDS D.U.T. RG + - VDD IAS 10 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 1200 TO P 1000 B OTTO M ID 24 A 4 2A 59 A 800 600 400 200 VD D = 2 5V 0 25 A 50 75 100 125 150 175 VDS Starting T J , Junction Temperature (C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V QG .2F .3F 10 V QGS D.U.T. QGD VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform http://store.iiic.cc/ + V - DS IRFP064N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS http://store.iiic.cc/ ISD * IRFP064N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B - 0 .25 (.0 1 0) M D B M -A 5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4 NOT ES : 5. 50 (.2 17 ) 4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 3 -C - 1 4.8 0 (.5 8 3 ) 1 4.2 0 (.5 5 9 ) 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C A S 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) LEAD AS SIGN MENT S 1 2 3 4 - G ATE DRAIN SO URCE DRAIN Part Marking Information TO-247AC E X AM PL E : T H IS I S A N IR F1 010 E XAM P LE : HT HAISS SISE MB A N LY IR FP E3 0 W IT IT H MB L Y L OT WCO D EAS9SE B1M L O T C O D E 3 A1 Q A I NT E RN A TIO N AL IN TER N AT IO N AL R E C TIF IE R R EC T IF IER LLOG O G OO IRIRF F PE10 3 010 9246 3 A19B Q 9 310 2M A SSBELMB A S SEM Y LY L O TLOTC O DCEOD E A P AR T N M B ER P AR T U NU M BE R D A TE C OD E D A TE C O D E (Y YW W ) (Y YW W ) Y Y = YE A R YY = YE A R W W = W EE K W W W EE K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/