- These types are subdivided into three groups A, B
and C according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
SYMBOL UNIT
P
TOT
mW
I
C
mA
I
CM
mA
T
J
, T
STG
°C
SYMBOL UNIT
V
CB
= 30V I
CBO
nA
V
EB
= 5 V I
EBO
nA
Document Number: DS_S1405001
Current Gain Group:
B
C
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
- For switching and AF amplifier applications
Taiwan Semiconductor
VALUE
Small Signal Product
NPN Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
TO-92
BC546A/B/C ~ BC550A/B/C
MECHANICAL DATA
BC547, BC550
BC548, BC549
FEATURES
Total Power dissipation 500
V
CBO
Collector-Base Voltage
V
6
6
6
PARAMETER
V
Collector-Emitter Breakdown Voltage I
C
= 10mA V
200
65
45
30
Collector-Emitter Voltage
Emitter-Base Voltage
BC548, BC549 6
V
CEO
Peak Collector Current
Collector Current
BC546
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
V
V
V
80
50
30
65
45
30
Junction and Storage Temperature Range
100
-65 to + 150
6
6
V
EBO
Version: B14
PARAMETER
Collector-Base Breakdown Voltage I
C
= 100μA
80
50
30
Collector Base Cutoff Current
Emitter Base Cutoff Current
DC Current Gain V
CE
= 5V,
I
C
= 2mA
V
(BR)CBO
h
FE
Emitter-Base Breakdown Voltage I
E
= 100μA
V
(BR)CEO
V
(BR)EBO
BC546
BC547, BC550
BC548, BC549
100
V
220
450
800
200
420
MIN
-
-
110
MAX
-
-
-
15