This is information on a product in full production.
April 2015 DocID025187 Rev 4 1/16
16
STGW60H65FB
STGWT60H65FB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 1.6 V (typ.) @ I
C
= 60 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
Applications
•Photovoltaic inverters
•High frequency converters
Description
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter . Furthermore, a slightly positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
TO-247
123
TO-3P
123
TAB
Table 1. Device summary
Order code Marking Package Packing
STGW60H65FB GW60H65FB TO-247 Tube
STGWT60H65FB GWT60H65FB TO-3P Tube
www.st.com
Contents STGW60H65FB, STGWT60H65FB
2/16 DocID025187 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1 T O-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 T O-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID025187 Rev 4 3/16
STGW60H65FB, STGWT60H65FB Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 650 V
I
C
Continu ous collec tor current at T
C
= 25 °C 80
(1)
1. Current level is limited by bond wires.
A
Continu ous collec tor current at T
C
= 100 °C 60
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25 °C 375 W
T
stg
Storage temperature -55 to 150 °C
T
j
Operating junction temperature -55 to 175
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-C
Thermal resistance junction-case 0.4 °C/W
R
thj-A
Thermal resistance junction-ambient 50
Electrical characteristics STGW60H65FB, STGWT60H65FB
4/16 DocID025187 Rev 4
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 650 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 60 A 1.60 2.0
V
V
GE
= 15 V, I
C
= 60 A
T
J
= 125 °C 1.75
V
GE
= 15 V, I
C
= 60 A
T
J
= 175 °C 1.85
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 650 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V ±250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacita nc e
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-7792-
pF
C
oes
Output capacitance - 262 -
C
res
Reverse transfer
capacitance -158-
Q
g
Total gate charge V
CC
= 520 V, I
C
= 60 A,
V
GE
= 15 V, see Figure 23
-306-
nCQ
ge
Gate-emitter charge - 126 -
Q
gc
Gate- collect or cha rge - 58 -
DocID025187 Rev 4 5/16
STGW60H65FB, STGWT60H65FB Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 22
-66 ns
t
r
Current rise time - 38 - ns
(di/dt)
on
Turn-on current slope - 1216 A/µs
t
d(off)
Tu rn-off delay time 210 ns
t
f
Current fall time - 20 - ns
E
on(1)
1. Energy loss includes reverse recovery of the external diode. The diode is the same as the co-packaged
STGW60H65DFB.
Turn-on switching loss - 1590 - µJ
E
off(2)
2. Turn-off loss also includes the tail of the collector current.
Tu rn-off switching loss - 900 - µJ
E
ts
Total switching loss - 2490 - µJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 22
-59 ns
t
r
Current rise time - 40 - ns
(di/dt)
on
Turn-on current slope - 1230 A/µs
t
d(off)
Tu rn-off delay time 242 ns
t
f
Current fall time - 147 - ns
E
on(1)
Turn-on switching loss - 2860 - µJ
E
off(2)
Tu rn-off switching loss - 1255 - µJ
E
ts
Total switching loss - 4115 - µ J
Electrical characteristics STGW60H65FB, STGWT60H65FB
6/16 DocID025187 Rev 4
2.1 Electrical characteristics (curve)
Figure 2. Output characteristics (T
J
= 25°C) Figure 3. Output characteristics (T
J
= 175°C)
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Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature
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I
C
60
40
20
0
050 T
C
(°C)
75
(A)
25 100
80
125 150
V
GE
= 15V, T
J
= 175 °C
GIPD270820131347FSR
Figure 6. Power dissipation vs. case
temperature Figure 7. V
CE(sat)
vs. junction temperature
P
tot
300
200
100
0
050 T
C
(°C)
75
(W)
25 100 125 150
V
GE
= 15V, T
J
= 175 °C
GIPD270820131401FSR
V
CE(sat)
1.8
1.6
1.4
1.2
-50 T
j
(°C)
(V)
100
2.0
050
2.2
150
2.4
2.6 V
GE
= 15V I
C
= 120A
I
C
= 60A
I
C
= 30A
GIPD021020131457FSR
DocID025187 Rev 4 7/16
STGW60H65FB, STGWT60H65FB Electrical characteristics
Figure 8. V
CE(sat)
vs. collector current Figure 9. Forward bias safe operating area
V
CE(sat)
1.4
1.2
020 I
C
(A)
(V)
40 60 80
2.2
2.0
1.8
1.6
V
GE
= 15V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
2.4
100
GIPD270820131423FSR
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Figure 10. Normalized V
(BR)CES
vs. junction
temperature Figure 11. Normalized V
GE(th)
vs. junction
temperature
V
GE(th)
(norm)
0.8
0.7
0.6
-50 T
J
(°C)
0 50 100 150
0.9
1.0
I
C
= 1mA
GIPD280820131503FSR
Figure 12. Gate charge vs. gate-emitter voltage Figure 13. Switching loss vs temperature
V
GE
(V)
4
2
00Q
g
(nC)
50 100 150 200
6
8
250 300 350
10
12
14
V
CC
= 520V, I
C
= 60A
I
g
= 1mA
GIPD280820131507FSR
E (μJ)
1800
1000
20025 T
J
(°C)
50 75 100 125
2600
V
CC
= 400V, V
GE
= 15V
R
g
= 10Ω, I
C
= 60A
150
E
OFF
E
ON
GIPD290820131623FSR
Electrical characteristics STGW60H65FB, STGWT60H65FB
8/16 DocID025187 Rev 4
Figure 14. Switching loss vs gate resistance Figure 15. Switching loss vs collector current
E(μJ)
2100
1300
5002R
G
(Ω)
610
2900
V
CC
= 400V, V
GE
= 15V
I
C
= 60A, T
J
= 175 °C
14 18
E
OFF
E
ON
GIPD280820131527FSR
E (μJ)
2000
1000
00I
C
(A)
20 40 60 80
3000
4000
5000
6000
7000 V
CC
= 400V, V
GE
= 15V
R
g
= 10Ω, T
J
= 175°C
100
E
OFF
E
ON
GIPD280820131538FSR
Figure 16. Switching loss vs collector emitter
voltage Figure 17. Switching times vs collector current
E (μJ)
2300
1300
300
150 V
CE
(V)
250 350 450
3300
T
J
= 175°C, V
GE
= 15V
R
g
= 10Ω, I
C
= 60A
E
OFF
E
ON
4300
GIPD280820131554FSR
t
(ns)
100
10
1
0I
C
(A)
20 40 60 80
T
J
= 175°C, V
GE
= 15V
R
g
= 10Ω, V
CC
= 400V
100
t
f
t
do
t
don
t
r
GIPD280820131613FSR
Figure 18. Switching times vs gate resistance Figure 19. Capacitance variations
t
(ns)
100
10 R
g
(Ω)
48
T
J
= 175°C, V
GE
= 15V
I
C
= 60A, V
CC
= 400V
12
t
f
t
do
16
t
don
t
r
20
GIPD280820131622FSR
C(pF)
1000
100
10
0.1 V
CE
(V)
110
10000 C
ies
C
oes
C
res
100
f = 1 MHz
GIPD280820131518FSR
DocID025187 Rev 4 9/16
STGW60H65FB, STGWT60H65FB Electrical characteristics
Figure 20. Collector current vs. switching
frequency Figure 21. Thermal impedance
20
40
60
80
100
110
Ic (A)
f (kHz)
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =10
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
GIPD080120151105FSR
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
tp
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
Test circuits STGW60H65FB, STGWT60H65FB
10/16 DocID025187 Rev 4
3 Test circuits
Figure 22. Test circuit for inductive load
switching Figure 23. Gate charge test circuit
Figure 24. Switching waveform
AM01504v1
AM01505v1
k
k
k
k
k
k
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
DocID025187 Rev 4 11/16
STGW60H65FB, STGWT60H65FB Package information
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk.
4.1 TO-247 package information
Figure 25. TO-247 package outline
0075325_H
Package information STGW60H65FB, STGWT60H65FB
12/16 DocID025187 Rev 4
Table 7. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID025187 Rev 4 13/16
STGW60H65FB, STGWT60H65FB Package information
4.2 TO-3P package information
Figure 26. TO-3P package outline
8045950_B
Package information STGW60H65FB, STGWT60H65FB
14/16 DocID025187 Rev 4
Tabl e 8. TO-3P mechanic al data
Dim. mm
Min. Typ. Max.
A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4
DocID025187 Rev 4 15/16
STGW60H65FB, STGWT60H65FB Revision history
5 Revision history
Table 9. Document revision history
Date Revision Changes
30-Aug-2013 1 Initial release.
28-Feb-2014 2 Updated title and features in cover page.
09-Jan-2015 3
Updated f eatures in cover page , Table 2: Ab solute maximu m rating s,
Table 4: Static characteristics and Table 6: Switching charac teri sti cs
(inductive load).
Updated Fi gure 5: Collector current vs . case temperat ure, Figure 6:
Power dissipation vs. case temperature, Figure 8: V
CE(sat)
vs.
collector current, Figure 17: Switching times vs collector current,
Figure 18: Switching times vs gate resistance and Figure 19:
Capa ci t anc e variations.
Added Figure 20: Collector current vs. switching frequency.
Updated Section 4: Package information.
Minor text chan ges .
01-Apr-2015 4
Text edits throughout document
Updated Table 2: Absolute maximum ratings
Updated Table 4: Static characteristics
Updated Table 6: Switching characteristics (inductive load)
Updated Section 2.1: Electrical characteristics (curve).
STGW60H65FB, STGWT60H65FB
16/16 DocID025187 Rev 4
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