SEMICONDUCTORS
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.125 ;I
D= -3.2A
DESCRIPTION
This new generation of high cell density trench MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•Low profile SOIC package
APPLICATIONS
•DC-DC Converters
•Power management functions
•Disconnect switches
•Motor control
DEVICE MARKING
ZXMP
6A17D
ZXMP6A17DN8
ISSUE 1 - OCTOBER 2005
1
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A17DN8TA 7’‘ 12mm 500 units
ZXMP6A17DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) RθJA 100 °C/W
Junction to Ambient (b)(e) RθJA 70 °C/W
Junction to Ambient (b)(d) RθJA 60 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGS ⫾20 V
Continuous Drain Current@VGS=10V; TA=25⬚C(b)(d)
@VGS=10V; TA=70⬚C(b)(d)
@VGS=10V; TA=25⬚C(a)(d)
ID-3.2
-2.5
-2.4
A
A
A
Pulsed Drain Current (c) IDM -14.2 A
Continuous Source Current (Body Diode)(b) IS-3.0 A
Pulsed Source Current (Body Diode)(c) ISM -14.2 A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD1.81
14.5
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD2.15
17
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
3
1 10 100
10m
100m
1
10
Single Pulse
Tamb=25°C
Oneactivedie
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IDDrain Current (A)
-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Two active die
Oneactivedie
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110
Tamb=25°C
Oneactivedie
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Oneactivedie
Pulse Power Dissipation
Pulse Width (s)
Maxi mum Power ( W)
CHARACTERISTICS
ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -60 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 ␮AV
DS=-60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250␮A, VDS=V
GS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.125
0.190
⍀
⍀
VGS=-10V, ID=-2.3A
VGS=-4.5V, ID=-1.9A
Forward Transconductance (1)(3) gfs 4.7 S VDS=-15V,ID=-2.3A
DYNAMIC (3)
Input Capacitance Ciss 637 pF
VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 53 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.6 ns
VDD =-30V, ID=-1A
RG≅6.0Ω,V
GS=-10V
Rise Time tr3.4 ns
Turn-Off Delay Time td(off) 26.2 ns
Fall Time tf11.3 ns
Gate Charge Qg9.8 nC VDS=-30V,VGS=-5V,
ID=-2.2A
Total Gate Charge Qg17.7 nC
VDS=-30V,VGS=-10V,
ID=-2.2A
Gate-Source Charge Qgs 1.6 nC
Gate-Drain Charge Qgd 4.4 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25°C, IS=-2A,
VGS=0V
Reverse Recovery Time (3) trr 25.1 ns TJ=25°C, IF=-1.7A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 27.2 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
TYPICAL CHARACTERISTICS
ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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TYPICAL CHARACTERISTICS
ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.35 1.75 0.053 0.069 e 1.27 BSC 0.050 BSC
A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020
D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010
H 5.80 6.20 0.228 0.244 ⍜0° 8° 0° 8°
E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050 - ----
PACKAGE DIMENSIONS