SYNSEMI SEMICONDUCTOR BZX85C Series SILICON ZENER DIODES Vz: 2.4 - 200 Volts DO - 41 Po : 1.3 Watts FEATURES : ah _ * Complete Voltage Range 2.7 to 200 Volts 0.107 (2 " * High peak reverse power dissipation 0.080 (2 * High reliability * Low leakage current 0.205 (5.2) | 0206 6.2) 0-186 (4 in MECHANICAL DATA salen, _ *Case - DO-41 Malded plastic 0.084 (086) a * Epoxy : UL94V-0 rate flame retardant oor) 28 (0 * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any Dimensions in inches and ( millimeters } * Weight : 0.339 gram MAXIMUM RATINGS Rating at 25 C ambient temperature unless olhenwise specified Rating Symbol Value Unit Dc Power Dissipation at TL = 50 c (Note) Po 13 Watts Maximum Forward Voltage at IF = 200 mA VF 1.0 Volts Junction Temperature Range TJ -56to + 175 C Storage Temperature Range Ts -55ta+ 175 we Note: (1) TL =Lead temperature at 3/8" (9.5mm) fram body Fig. 1 POWER TEMPERATURE DERATING CURVE L= 9/8" (9.6m ag (NATTS) 06 0.3 Po, MAXIMUM DISSIPATION 0 25 60 75 400 125 160 175 Ti, LEAD TEMPERATURE (#0) SYNSEMI SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Rating at = 25 C ambient ternperature unless otherwise specified Nominal Zener Maximum Zener Maximum Reverse Maximum BC TYPE Voltage Impedance Leakage Current Zener Current Vz @ lav | lar Zzt @ lar | 22K @ lz lzK IR @ VR zn Mw | (may (2) (2) {mA} (uA) vy) (mA) BZxX85 C2V4 24 80 20 400 1.0 150 1.0 410 BZX85 C2V7 27 80 20, 400 1.0 150 1.0 370 B2xX85 C3V0 3.0 80 20, 400 1.0 100 1.0 240 BZX85 C3V3 3.3 80 20 400 1.0 40 1.0 320 BZX85 C3V6 3.6 70 20 500 1.0 20) 1.0 290 BZX85 C3V9 39 60 15 500 1.0 10 4.0 280 BzZxX85 C4V3 43 50 13 500 1.0 3.0 1.0 250 BZX85 CAV? AT 45 13 500 1.0 3.0 1.0 215 BzZxX85 C5V1 5.1 45 10 500 1.6 1.0 15 200 BZX85 C5V6 56 45 7.0 400 1.6 1.0 20 190 BZX85 C6V2 6.2 35 40 300 1.0 1.0 3.0 170 BZxX85 C6V8 68 36 3.5 300 1.0 20 40 155 BZX85 C7V5 75 35 3.0 200 as 20 46 140 B2ZxX85 C8V2 8.2 25 5.0 200 as 20 6.2 130 BzZx85 CoV1 9 25 5.0 200 O5 20 6.8 120 Bzx85 C10 10 25 7.0 200 Os 20 75 105 BZX85 C11 11 20 8.0 300 05 50 8.2 oF BzZzx85 C12 i 20 9.0 350 O05 0.5 9 83. BZX85 C13 13 20 10 400 O05 0.5 10 7g BzZxX85 C15 15 16 15 500 Os 05 le 7 BZX85 C16 16 16 15 500 05 Os 12 66 Bz2xX85 C18 18 16 20 500 a5 0.5 13 62 BzZzX85 C20 20 10 24 600 05 0.5 15 56 BZX85 C22 22 10 25 600 05 0.5 16 52 BZX85 C24 24 10 25 600 05 0.5 18 4T BZX85 C27 27 8.0 30 750 0.25 05 20 41 Bz2X85 C30 30 8.0 30) 1000 0.25 05 22 36 BZX85 C33 33 8.0 35 1000 0.25 05 2d 33. BZX85 C36 36 8.0 40 1000 0.25 Os 27 30 BZX85 C39 39 6.0 50. 1000 0.25 OS 30 23, BZX85 C43 43 60 50. 1000 0.25 Os 33 26 BZx85 C47 47 40 90, 1500 0.25 Os 36 23, BZ2X85 C51 51 40 115 1500 0.25 Os 3g 2] BZX85 C56 56 40 120 2000 0.25 Os 43 19 BZX85 C62 62 40 125 2000 0.25 Os 47 16 BZX85 C68 68 40 130 2000 0.25 Os St 15 BZX85 C75 75 40 135 2000 0.25 Os 56 14 B2xss C82 82 27 200 3000 0.26 Os 62 12 B2xX85 C91 a4 Qt 250 3000 0.25 Os 88 4a B2x85 C100 100 27 350 3000 0.25 Os 7 g4 B2x85 C110 110 27 460 4000 0.25 Os 82 8.6 B2x85 C120 120 20 650 4500 0.25 Os a 7.8 Bz2xX85 C130 130 20 7Og 5000 0.25 Os 100 7.0 B2ZxX85 C150 160 20 4000 6000 0.25 Os 110 64 B2x85 C160 160 125 1100 6500 0.25 Os 120 5.8 BzZzxX85 C180 180 18 1200 7000 0.25 0.5 130 5.2 Bz2zx85 C200 200 1.5) 1500 8000 0.25 0.5 150 47 Note : (1) The type number listed have a standard tolerance on the nominal zener voltage of +-5.0% (2) "BZX "will be omitted in marking on the diode