IRF9530NSPbF IRF9530NLPbF Benefits Advanced Process Technology Surface Mount (IRF9530NS) Low-profile through-hole(IRF9530NL) 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET Package Type IRF9530NLPbF TO-262 IRF9530NSPbF RDS(on) 0.20 ID -14A D Tape and Reel Left S D S G G TO-262 Pak IRF9530NLPbF D2 Pak IRF9530NSPbF G Gate D Drain Standard Pack Form Quantity Tube 50 D2-Pak Absolute Maximum Ratings Symbol -100V D Description Fifth Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. Base part number VDSS Orderable Part Number IRF9530NLPbF (Obsolete) 800 IRF9530NSTRLPbF Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ -10V -14 ID @ TC = 100C IDM PD @TA = 25C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -10 -56 3.8 PD @TC = 25C Maximum Power Dissipation VGS EAS IAR EAR Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy dv/dt TJ TSTG Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RJA 1 Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount, steady state) S Source Units A W 79 W 0.53 20 250 -8.4 7.9 W/C V mJ A mJ -5.0 -55 to + 175 V/ns C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- --- 1.9 40 C/W 2016-5-27 IRF9530NS/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LS Internal Source Inductance IGSS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions -100 --- --- V VGS = 0V, ID = -250A --- -0.11 --- V/C Reference to 25C, ID = -1mA --- --- 0.20 VGS = -10V, ID = -8.4A -2.0 --- -4.0 V VDS = VGS, ID = -250A 3.2 --- --- S VDS = -50V, ID = -8.4A --- --- -25 VDS = -100V, VGS = 0V A --- --- -250 VDS = -80V,VGS = 0V,TJ =150C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V --- --- 58 ID = -8.4A nC VDS = -80V --- --- 8.3 VGS = -10V See Fig.6 and 13 --- --- 32 --- 15 --- VDD = -50V --- 58 --- ID = -8.4A ns --- 45 --- RG= 9.1 --- 46 --- RD= 6.2See Fig.6 Between lead, --- 7.5 --- nH and center of die contact --- 760 --- VGS = 0V pF VDS = -25V --- 260 --- = 1.0MHz, See Fig. 5 --- 170 --- Min. Typ. Max. Units --- --- -14 --- --- -56 --- --- --- --- 130 650 -1.6 190 970 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -8.4A,VGS = 0V ns TJ = 25C ,IF = -8.4A nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) starting TJ = 25C, L = 7.0mH, RG = 25, IAS = -8.4A. (See fig. 12) ISD -8.4A, di/dt -490A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Uses IRF9530N data and test conditions. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2016-5-27 IRF9530NS/LPbF Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics 3 Fig. 2 Typical Output Characteristics Fig. 4 Normalized On-Resistance vs. Temperature 2016-5-27 IRF9530NS/LPbF Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2016-5-27 IRF9530NS/LPbF Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2016-5-27 IRF9530NS/LPbF Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2016-5-27 IRF9530NS/LPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for PChannel HEXFET(R) Power MOSFETs 7 2016-5-27 IRF9530NS/LPbF D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L ASSEMBLY LOT CODE OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to Infineon's web site www.infineon.com 8 2016-5-27 IRF9530NS/LPbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to Infineon's web site www.infineon.com 9 2016-5-27 IRF9530NS/LPbF D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to Infineon's web site www.infineon.com 10 2016-5-27 IRF9530NS/LPbF Qualification Information Qualification Level Moisture Sensitivity Level D2-Pak TO-262 RoHS Compliant Industrial (per JEDEC JESD47F) MSL1 (per JEDEC J-STD-020D) N/A Yes Qualification standards can be found at Infineon's web site www.infineon.com Applicable version of JEDEC standard at the time of product release. Revision History Date 5/27/2016 Comments Updated datasheet with corporate template. Added disclaimer on last page. TO-262 package was removed from ordering information since it is EOL on page 1. Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AUConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DIPOLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, mydTM, NovalithICTM, OPTIGATM, Op MOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PROSILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respec ve owners. Edi on 20160419 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2016 Infineon Technologies AG. All Rights Reserved. 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