SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 – APRIL 2006
FEATURES
* 60 Volt VCEO
PARTMARKIN G DETAIL – 702
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous D rain Current at Tamb=25°C ID115 mA
Pulsed Drain Current IDM 800 mA
Gate-Source Voltage VGS ± 40 V
Power Dissipa tion at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 60 V ID=10µA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 12.5VI
D=250mA, VDS= VGS
Gate-Body Leakage IGSS 10 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage Drain
Current IDSS 1
500 µA
µAVDS=48V, VGS=0V
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Voltage (1) VDS(on) 3.75
375 V
mV VGS=10V, ID=500mA
VGS=5V, ID=50mA
Static Drain-Source On-State
Resistance (1) RDS(on) 7.5
7.5 Ω
ΩVGS=10V, ID=500mA
VGS=5V, ID=50mA
Forward Transconductance
(1)(2) gfs 80 mS VDS=25V, ID=500mA
Input Capacitance (2) Ciss 50 pF
Common Source O utput
Capacitance (2) Coss 25 pF VDS=25V, VGS=0 V, f=1 MHz
Reverse Transfer Capacitance
(2) Crss 5pF
Turn-On Time (2)(3) t(on) 20 ns VDD
≈30V, I D=200mA
Rg=25Ω, RL=150Ω
Turn-Off Time (2)(3) t(off) 20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
2N7002
D
G
S
SOT23
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