MBRF2070CT thru 20100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBRF2070CT
70
49
70
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak
Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
T
C
=120 C
MBRF2080CT
80
56
80
MBRF2090CT
90
63
90
MBRF20100CT
100
70
100
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 70
to
100
Volts
FORWARD CURRENT
- 20
Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm x 135 mm x 8mm Aluminum Plate Heatsink
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SEMICONDUCTOR
LITE-ON
REV. 6, May-2011, KTHC24
G
I
C
E
J
B
K
A
M
D
L
N
F
HH
PIN
1 2 3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
15.50 16.50
10.40
10.0
3.00 3.50
9.30 9.00
2.90 3.60
13.46 14.22
1.15 1.70
0.75
2.70
N
M
L
K
J
I 1.00
2.40
0.70 0.45
3.00 3.30
4.36 4.77
2.48 2.80
2.80
2.50
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
R
0JC
2.0
C/W
V
F
V
Voltage Rate of Change (Rated VR)
dv/dt 10000
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.01
10
mA
Maximum Forward
Voltage (Note 1)
T
J
=125 C
T
J
=25 C
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @
T
J
=125 C
T
J
=25 C
V/us
0.75
0.85
0.85
0.95
Typical Junction Capacitance per element (Note 3)
C
J
350
pF
V
dis
V
Dielectric Strengh from terminals to case, AC
with t=1 minute, RH<30%
2000
PIN 1
PIN 3 PIN 2
I
RRM
Peak Repetitive Reverse Current
tp=2us, square F=1KHz
1
A
@T
J
=25
C
@IR
=100uA
@IR
=100uA
@IR
=100uA