3–661
Motorola Bipolar Power Transistor Device Data
Designer's
Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100
_
C
Inductive Switching Matrix 2 to 4 Amp, 25 and 100
_
C
...t
c @ 3A, 100
_
C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Value
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
400
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter V oltage
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
VCEV
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
700
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
VEBO
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
9
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current Continuous
Peak (1)
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
IC
ICM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
4
8
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current Continuous
Peak (1)
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
IB
IBM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
2
4
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Current Continuous
Peak (1)
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
IE
IEM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
6
12
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
2
16
ÎÎÎÎ
ÎÎÎÎ
Watts
mW/
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
75
600
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Watts
mW/
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
65 to +150
ÎÎÎÎ
ÎÎÎÎ
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
RθJA
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
62.5
ÎÎÎÎ
ÎÎÎÎ
_
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
RθJC
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
1.67
ÎÎÎÎ
ÎÎÎÎ
_
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering
Purposes: 1/8 from Case for 5 Seconds
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
275
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE13005
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
75 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
REV 3
MJE13005
3–662 Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
_
C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining V oltage
(IC = 10 mA, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎ
400
ÎÎ
ÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100
_
C)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEV
ÎÎ
ÎÎ
ÎÎ
1
5
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IEBO
ÎÎ
ÎÎ
ÎÎ
1
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with base forward biased
ÎÎÎÎ
ÎÎÎÎ
IS/b
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
See Figure 11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Clamped Inductive SOA with Base Reverse Biased
ÎÎÎÎ
ÎÎÎÎ
RBSOA
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
See Figure 12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎ
10
8
ÎÎ
ÎÎ
60
40
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation V oltage
(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 4 Adc, IB = 1 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100
_
C)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
0.5
0.6
1
1
ÎÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100
_
C)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VBE(sat)
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
1.2
1.6
1.5
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
fT
ÎÎ
4
ÎÎ
ÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎ
ÎÎÎÎ
Cob
65
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Resistive Load (Table 2)
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Delay T ime
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
td
0.025
0.1
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Rise T ime
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 125 Vdc, IC = 2 A,
IB1 =I
B2 =04A t =25µs
ÎÎÎÎ
ÎÎÎÎ
tr
0.3
0.7
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Storage T ime
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
IB1
=
IB2
=
0
.
4
A
,
t
p =
25
µs
,
Duty Cycle
v
1%)
ÎÎÎÎ
ÎÎÎÎ
ts
1.7
4
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Fall T ime
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
tf
0.4
0.9
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Inductive Load, Clamped (Table 2, Figure 13)
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Voltage Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
(I 2 A V 300 Vd
ÎÎÎÎ
ÎÎÎÎ
tsv
0.9
4
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Crossover Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2 A, Vclamp = 300 Vdc,
I
B1
= 0.4 A
,
V
BE(off)
= 5 Vdc
,
T
C
= 100
_
C
)
ÎÎÎÎ
ÎÎÎÎ
tc
0.32
0.9
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Fall T ime
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
IB1
0
.
4
A
,
VBE(off)
5
Vdc
,
TC
100 C)
ÎÎÎÎ
ÎÎÎÎ
tfi
0.16
ÎÎÎ
ÎÎÎ
µs
*Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
MJE13005
3–663
Motorola Bipolar Power Transistor Device Data
C, CAPACIT ANCE (pF) VCE(sat), COLLECTOR–EMITTER SATURATION
VOLTAGE (VOLTS)
V
BE
,
BASE–EMI
TT
ER
V
OL
T
AGE (
V
OL
T
S
)
VCE, COLLECTOR–EMITTER VOLT AGE (VOLTS
)
IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
1.1
1.3
0.7
0.3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.1 0.4 2 4
10
Figure 2. Collector Saturation Region
0.03 IB, BASE CURRENT (AMP)
0.30.05
1.2
0.4
0
100
h
FE
,
DC
C
URREN
T
GAIN
0.1 0.2 0.5 3
Figure 3. Base–Emitter Voltage Figure 4. Collector–Emitter Saturation Voltage
Figure 5. Collector Cutoff Region
2
0.8
0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0
TJ = 25°C
0.2 1
Figure 6. Capacitance
2 k
VR, REVERSE VOLT AGE (VOLTS)
Cib
Cob
0.3
,
C
OLLE
CT
OR
C
URREN
T
(A
)
µIC
0.4 0.2
70
50
300
1.6
0.5
IC = 1 A
TJ = –55°C
5
0.04 0.6
0.06 0.1 10.04 0.40.2 0.6
70
50
30
7
300
200
100
20
30
10050510.5
150°C
IC/IB = 4
+0.6
2 A
0.7 1 2
0.9 0.35
0.55
0.25
0.05
0.45
0.06
VCE = 2 V
VCE = 5 V
TJ = 150°C
25°C
–55°C
2
0.15
+0.4+0.2
1
10
100
1 k
10 k
500
700
1 k
10 30
REVERSE FORWARD
VCE = 250 V
VBE(sat) @ IC/IB = 4
VBE(on) @ VCE = 2 V
20
3 A 4 A
4
25°C
25°C
0.06 0.1 10.04 0.40.2 0.6 2 4
3
TJ = –55°C
25°C
150°C
TJ = 150°C
125°C
100°C
75°C
50°C
25°C
MJE13005
3–664 Motorola Bipolar Power Transistor Device Data
trv
TIME
IC
VCE 90% IB1
tsv
ICPK Vclamp
90% Vclamp 90% IC
10% Vclamp 10%
ICPK 2% IC
IB
tfi tti
tc
Figure 7. Inductive Switching Measurements
Table 1. Typical Inductive Switching Performance
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
AMP
ÎÎÎ
Î
Î
Î
ÎÎÎ
TC
_
C
ÎÎÎ
Î
Î
Î
ÎÎÎ
tsv
ns
ÎÎÎ
Î
Î
Î
ÎÎÎ
trv
ns
ÎÎÎ
Î
Î
Î
ÎÎÎ
tfi
ns
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
tti
ns
ÎÎÎ
Î
Î
Î
ÎÎÎ
tc
ns
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2
ÎÎÎ
Î
Î
Î
ÎÎÎ
25
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
600
900
ÎÎÎ
Î
Î
Î
ÎÎÎ
70
110
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
240
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
80
130
ÎÎÎ
Î
Î
Î
ÎÎÎ
180
320
ÎÎÎÎ
ÎÎÎÎ
3
ÎÎÎ
ÎÎÎ
25
100
ÎÎÎ
ÎÎÎ
650
950
ÎÎÎ
ÎÎÎ
60
100
ÎÎÎ
ÎÎÎ
140
330
ÎÎÎÎ
ÎÎÎÎ
60
100
ÎÎÎ
ÎÎÎ
200
350
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
4
ÎÎÎ
Î
Î
Î
ÎÎÎ
25
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
550
850
ÎÎÎ
Î
Î
Î
ÎÎÎ
70
110
ÎÎÎ
Î
Î
Î
ÎÎÎ
160
350
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
100
160
ÎÎÎ
Î
Î
Î
ÎÎÎ
220
390
NOTE: All Data recorded in the inductive Switching Circuit In Table 2.
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 1090% Vclamp
tfi = Current Fall Time, 9010% IC
tti = Current Tail, 102% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + t fi
]
tc. However , at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100
_
C.
t, TIME ( s)µ
t, TIME ( s)µ
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
tr
td @ VBE(off) = 5 V
0.02
0.01
1
0.5
0.2
IC, COLLECTOR CURRENT (AMP)
0.4 4120.04
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.2
0.05
0.1
0.1
Figure 9. Turn–Off Time
0.2
0.1
10
5
1
0.5 4120.04
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.2
0.3
0.5
0.1
2
ts
tf
RESISTIVE SWITCHING PERFORMANCE
MJE13005
3–665
Motorola Bipolar Power Transistor Device Data
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
TEST CIRCUITS
CIRCUIT
VALUES
TEST WAVEFORMS
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
5 V
PW
DUTY CYCLE 10%
tr, tf 10 ns 68 1 k
0.001 µF
0.02 µF
1N4933
270
+5 V
1 k 2N2905
47
1/2 W 100
–VBE(off)
MJE200
T.U.T.
IB
RB
1N4933
1N4933 33
33
2N2222
1 k
MJE210
VCC
+5 V
L
IC
MR826*
Vclamp
*SELECTED FOR 1 kV
VCE
5.1 k
51
+125 V
RC
SCOPE
4.0 V
D1
RBTUT
t1 ADJUSTED TO
OBTAIN IC
t1 Lcoil (ICpk)
VCC
t2 Lcoil (ICpk)
Vclamp
+10 V 25 µs
0
–8 V
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 T urns) #16
GAP for 200 µH/20 A
Lcoil = 200 µHVCC = 20 V
Vclamp = 300 Vdc
VCC = 125 V
RC = 62
D1 = 1N5820 or Equiv.
RB = 22
Test Equipment
Scope–Tektronics
475 or Equivalent
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
t1
IC
VCE
TIME
IC(pk)
VCE or
Vclamp
t2t
t
tf
tf CLAMPED
tf UNCLAMPED t2
Table 2. Test Conditions for Dynamic Performance
t, TIME (ms)
1
0.01
0.01
0.7
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
0.05 1 2 5 10 20 50 100 200 500
ZθJC(t) = r(t) RθJC
RθJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1 0.50.2
(NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.02
Figure 10. Typical Thermal Response [ZθJC(t)]
0.1
0.02
MJE13005
3–666 Motorola Bipolar Power Transistor Device Data
The Safe Operating Area Figures 1 1 and 12 are specified ratings
for these devices under the test conditions shown.
IC(pk)
,
C
OLLE
CT
OR
C
URREN
T
(AMP
)
IC
,
C
OLLE
CT
OR
C
URREN
T
(AMP
)
5 ms 500 µs
1 ms
dc
10
7VCE, COLLECTOR–EMITTER VOLT AGE (VOLTS)
0.02
10 400
2
1
5
0.5
0.1
0.05
30 50 70 100
Figure 11. Forward Bias Safe Operating Area
Figure 12. Reverse Bias Switching
Safe Operating Area
0.2
0.01 300 500
MJE13005
520
4
0800
1
100 300
TC 100°C
IB1 = 2.0 A
500 700
VBE(off) = 9 V
0
2
VCE, COLLECTOR–EMITTER CLAMP VOLT AGE (VOLTS)
3
200 400 600
5 V
MJE13005 3 V
200
1.5 V
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC 25
_
C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 12 gives the complete RBSOA charac-
teristics.
Figure 13. Forward Bias Power Derating
TC, CASE TEMPERATURE (°C)
040 120 160
0.6
POWER DERATING F ACTOR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60 100 14080
THERMAL
DERATING
20
2–3
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 1. Plastic (Isolated TO–220 Type)
Device Type Resistive Switching
ICCont
Amps
Max
VCEO(sus)
Volts
Min
VCES
Volts
Min NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD (Case)
Watts
@ 25°C
1 250
MJF47
30/150 0.3 2 typ 0.17 typ 0.3 10 28
2 400 700
BUL44F
14/34 0.2 2.75(3) 0.2(3) 1 13 typ 25
1000
MJF18002
14/34 0.2 2.75(3) 0.175(3) 1 13 typ 25
3 100
MJF31C MJF32C
10 min 1 0.6 0.3 1 3 28
5100
MJF122
(2)
MJF127
(2) 2000 min 3 1.5 typ 1.5 typ 3 4(1) 28
400 700
BUL45F
14/34 0.3 1.7(3) 0.15(3) 1 12 typ 35
450 1000
BUT11AF
10 min .005 4 0.8 2.5 40
1000
MJF18004
14/34 0.3 1.7(3) 0.15(3) 1 13 typ 35
550 1200
MJF18204
18/35 0.5 2.75(3) 0.2(3) 2 12 35
6 400 700
BUL146F
14/34 0.5 2.5(3) 0.15(3) 3 14 typ 40
450 1000
MJF18006
14/34 0.5 3.2(3) 0.15(3) 3 14 typ 40
880
MJF6107
30/90 2 0.5 typ 0.13 typ 2 4 35
150
MJF15030 MJF15031
40 min 3 1 typ 0.15 typ 3 30 35
400 700
MJF13007
5/30 5 3 0.7 5 4 40
BUL147F
14/34 1 2.5(3) 0.18(3) 2 14 typ 45
450 1000
MJF18008
16/34 1 2.75(3) 0.18(3) 2 13 typ 45
10 60
MJF3055 MJF2955
20/100 4 2 40
80
MJF44H11 MJF45H11
40/100 4 0.5 typ 0.14 typ 5 40 35
100
MJF6388
(2)
MJF6668
(2) 3k/20k 3 1.5 typ 1.5 typ 20(1) 40
450 1000
MJF18009
14/34 1.5 2.75(3) 0.2(3) 3 12 50
12 400 700
MJF13009
6/30 8 3 0.7 8 8 40
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
1
3
2
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
Selector Guide
2–4 Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min(8) NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
0.5 350 MJE2360T 15 min 0.1 10 typ 30
MJE2361T
40 min 0.1 10 typ 30
1 100 TIP29C TIP30C 15/75 1 0.6 typ 0.3 typ 1 3 30
250 TIP47 30/150 0.3 2 typ 0.18 typ 0.3 10 40
300 TIP48 MJE5730 30/150 0.3 2 typ 0.18 typ 0.3 10 40
350
TIP49 MJE5731
30/150 0.3 2 typ 0.18 typ 0.3 10 40
400
TIP50 MJE5731A
(7) 30/150 0.3 2 typ 0.18 typ 0.3 10 40
2 100
TIP112
(2)
TIP117
(2) 500 min 2 1.7 typ 1.3 typ 2 25(1) 50
400/700
BUL44
14/36 0.4 2.75(3) 0.175(3) 1 13 typ 50
450/1000
BUX85
30 0.1 3.5 1.4 1 4 50
450/1000
MJE18002
14/34 0.2 3(3) 0.17(3) 1 12 typ 40
900/1800
MJE1320
3 min 1 4 typ 0.8 typ 1 80
3 80 BD241B BD242B 25 min 1 3 40
100 BD241C BD242C 25 min 1 3 40
TIP31C TIP32C
25 min 1 0.6 typ 0.3 typ 1 3 40
150
MJE9780
50/200 0.5 5 typ 40
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)VCEO = 375 V
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
(TO–220AB)
123
4
2–5
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
4 40
MJE1123
45/100 4 5 75
60
MJE800
(2)
MJE700
(2) 750 min 1.5 1(1) 40
80
D44C12 D45C12
40/120 0.2 1 40 typ 30
400/700
MJE13005
6/30 3 3 0.7 3 4 60
5 100
TIP122
(2)
TIP127
(2) 1k min 3 1.5 typ 1.5 typ 4 4(1) 75
250 2N6497 10/75 2.5 1.8 0.8 2.5 5 80
300
2N6498
10/75 2.5 1.8 0.8 2.5 5 80
400/700
BUL45
14/34 0.3 1.7(3) 0.15(3) 1 12 typ 75
450/1000 MJE16002 5 min 5 3 0.3 3 80
450/850
MJE16004
7 min 5 2.7 0.35 3 80
450/1000
MJE18004
14/34 0.3 1.7 0.15 1.0 13 75
550/1200
MJE18204
18/35 0.5 2.75(3) 0.2(3) 2 12 75
6 80
BD243B BD244B
15 min 3 0.4 typ 0.15 typ 3 3 65
100
BD243C BD244C
15 min 30.4 typ 0.15 typ 3 3 65
TIP41C TIP42C
15/75 3 0.4 typ 0.15 typ 3 3 65
250/550
MJE16204
5 min 6 1.5(2) 0.15(2) 1 10 80
400/700
BUL146
14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100
450/1000
MJE18006
14/34 0.5 3.2(3) 0.13(3) 3 14 typ 100
730 2N6288 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40
50 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40
70
2N6292 2N6107
30/150 2 0.4 typ 0.15 typ 3 4 40
100
BD801 BD802
15 min 3 3 65
150 BU407 30 min 1.5 0.75 5 10 60
200
BU406
30 min 1.5 0.75 5 10 60
450
BU522B
(2) 250 min 2.5 7.5 75
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)VCEO = 375 V
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide
2–6 Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
8 60 2N6043(2) 2N6040(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75
80
2N6044
(2)
2N6041
(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75
BDX53B
(2)
BDX54B
(2) 750 min 3 4(1) 60
100
2N6045
(2)
2N6042
(2) 1k/10k 3 1.5 typ 1.5 typ 3 4(1) 75
BDX53C
(2)
BDX54C
(2) 750 min 3
TIP102
(2)
TIP107
(2) 1k/20k 3 1.5 typ 1.5 typ 3 4(1) 80
120 MJE15028 MJE15029 20 min 4 30 50
150
MJE15030 MJE15031
20 min 4 30 50
200
BU806
(2) 100 min 5 0.55 typ 0.2 typ 5 60
300/600 MJE5740(2) 200 min 4 8 typ 2 typ 6 4 80
MJE5850 15 min 2 2 0.5 4 80
350
MJE5741
(2) 200 min 4 8 typ 2 typ 6 80
MJE5851
15 min 2 2 0.5 4 80
MJE5742
(2) 200 min 4 8 typ 2 typ 6 80
MJE13007
5/30 5 3 0.7 5 80
MJE5852
15 min 2 2 0.5 4 80
400/650
MJE16106
6/22 8 2 typ 0.1 typ 5 100
400/700
BUL147
14/34 1 2.5(3) 0.18(3) 2 14 typ 125
450/1000
MJE18008
16/34 1 2.75(3) 0.18(3) 2 13 typ 125
10 20
BD808
15 min 4 1.5 90
60 D44H8 D45H8 40 min 4 50
MJE3055T MJE2955T
20/70 4 75
2N6387
(2)
2N6667
(2) 1k/20k 5 20(1) 65
80
BDX33B
(2)
BDX34B
(2) 750 min 3 3 70
BD809 BD810
15 min 4 1.5 90
2N6388
(2)
2N6668
(2) 1k/20k 5 20(1) 65
D44H10 D45H10 20 min 4 0.5 typ 0.14 typ 5 50 typ 50
D44H11 D45H11
40 min 4 0.5 typ 0.14 typ 5 50 typ 50
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)VCEO = 375 V
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
(9)Self protected Darlington
Devices listed in bold, italic are Motorola preferred devices.
2–7
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
10 100
BDX33C
(2)
BDX34C
(2) 750 min 3 3 70
450/1000
MJE18009
14/34 1.5 2.75(3) 0.2(3) 3 12 150
12 400/700
MJE13009
6/30 8 3 0.7 8 4 100
15 80
2N6488 2N6491
20/150 5 0.6 typ 0.3 typ 5 5 75
D44VH10 D45VH10
20 min 4 0.5 0.09 8 50 typ 83
100
BDW42
(2)
BDW47
(2) 1k min 5 1 typ 1.5 typ 5 4 85
Table 3. Plastic TO–218 Type
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min(8) NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
8 500/1000
MJH16006A
5 min 8 2.5 0.25 5 125
10 60 TIP140(2) TIP145(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125
TIP141(2) TIP146(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125
100
BDV65B
(2)
BDV64B
(2) 1k min 5 125
TIP33C TIP34C 20/100 3 3 80
TIP142
(2)
TIP147
(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125
400
BU323AP
(2) 150/100 6 15 15 6 125
MJH10012
(2) 100/2k 6 15 15 6 118
(1)|hFE| @ 1 MHz
(2)Darlington
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 340D
(TO–218 Type,
SOT–93)
1
3
2
4