SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS www.onsemi.com C The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337. G E COLLECTOR (FLANGE) GC E COLLECTOR (FLANGE) Features * * * * * * * * >100 kHz Operation 390 V, 12 A 200 kHz Operation 390 V, 9A 600 V Switching SOA Capability Typical Fall Time 70 ns at TJ = 125C Low Conduction Loss Temperature Compensating SaberTM Model Related Literature TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" These are Pb-Free Devices TO-220-3LD CASE 340AT JEDEC ALTERNATE VERSION G D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ JEDEC STYLE E EC G COLLECTOR (FLANGE) TO-247-3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K 12N60A4D $Y &Z &3 &K 12N60A4D $Y&Z&3&K 12N60A4D $Y&Z&3&K 12N60A4D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. (c) Semiconductor Components Industries, LLC, 2001 April, 2020 - Rev. 3 1 Publication Order Number: HGT1S12N60A4DS/D HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified) Symbol HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Unit BVCES 600 V IC25 IC110 54 23 A A ICM 96 A Gate to Emitter Voltage Continuous VGES 20 V Gate to Emitter Voltage Pulsed VGEM 30 V Switching Safe Operating Area at TJ = 150C, Figure 2 SSOA 60 A at 600 V Parameter Collector to Emitter Voltage Collector Current Continuous At TC = 25C At TC = 110C Collector Current Pulsed (Note 1) Power Dissipation Total at TC = 25C PD 167 W 1.33 W/C TJ, TSTG -55 to 150 C TL Tpkg 300 260 C C Power Dissipation Derating TC > 25C Operating and Storage Junction Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Package Body for 10 s, see Tech Brief 334. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Collector to Emitter Breakdown Voltage Symbol Min Typ Max Unit 600 - - V TJ = 25C - - 250 mA TJ = 125C - - 2.0 mA TJ = 25C - 2.0 2.7 V TJ = 125C - 1.6 2.0 V IC = 250 mA, VCE = 600 V - 5.6 - V VGE = 20 V - - 250 nA SSOA TJ = 150C, RG = 10 W, VGE = 15 V, L = 100 mH, VCE = 600 V 60 - - A Gate to Emitter Plateau Voltage VGEP IC = 12 A, VCE = 300 V On-State Gate Charge Qg(ON) IC = 12 A, VCE = 300 V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time BVCES Test Condition ICES VCE(SAT) VGE(TH) IGES td(ON)I trI td(OFF)I tfI IC = 250 mA, VGE = 0 V VCE = 600 V IC = 12 A, VGE = 15 V - 8 - V VGE = 15 V - 78 96 nC VGE = 20 V - 97 120 nC - 17 - ns - 8 - ns - 96 - ns - 18 - ns - 55 - mJ IGBT and Diode at TJ = 25C, ICE = 12 A, VCE = 390 V, VGE = 15 V, RG = 10 W, L = 500 mH, Test Circuit (Figure 24) Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 160 - mJ Turn-Off Energy (Note 2) EOFF - 50 - mJ Current Turn-On Delay Time td(ON)I - 17 - ns - 16 - ns - 110 170 ns - 70 95 ns - 55 - mJ Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I tfI IGBT and Diode at TJ = 125C, ICE = 12 A, VCE = 390 V, VGE = 15 V, RG = 10 W, L = 500 mH, Test Circuit (Figure 24) Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 250 350 mJ Turn-Off Energy (Note 2) EOFF - 175 285 mJ www.onsemi.com 2 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) (continued) Parameter Symbol Diode Forward Voltage Test Condition VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RqJC Min Typ Max Unit IEC = 12 A - 2.2 - V IEC = 12 A, dIEC/dt = 200 A/ms - 30 - ns IEC = 1 A, dIEC/dt = 200 A/ms - 18 - ns IGBT - - 0.75 C/W Diode - - 2.0 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 70 VGE = 15 V 50 40 30 20 10 0 25 50 75 100 125 TJ = 150C, RG = 10 W, VGE = 15 V, L = 200 mH 60 50 40 30 20 10 0 150 0 TC, CASE TEMPERATURE (C) TC 75C 300 VGE 15 V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.75C/W, SEE NOTES TJ = 125C, RG = 10 W, L = 500 mH, VCE = 390 V 10 1 3 10 200 300 400 500 600 700 Figure 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC, SHORT CIRCUIT WITHSTAND TIME (ms) fMAX, OPERATING FREQUENCY (kHz) Figure 1. DC COLLECTOR CURRENT vs. CASE TEMPERATURE 500 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 20 300 VCE = 390 V, RG = 10 W, TJ = 125C 18 275 16 250 14 225 I SC 12 200 175 10 8 150 6 125 t SC 4 30 ICE, COLLECTOR TO EMITTER CURRENT (A) 100 2 75 0 50 15 9 10 11 12 13 14 VGE, GATE TO EMITTER VOLTAGE (V) Figure 3. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT Figure 4. SHORT CIRCUIT WITHSTAND TIME www.onsemi.com 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) 60 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, DC COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES (unless otherwise specified) HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 24 DUTY CYCLE < 0.5%, VGE = 12 V PULSE DURATION = 250 ms 20 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 24 16 TJ = 150C 12 TJ = 125C 8 4 0 TJ = 25C 0 0.5 1 1.5 2 DUTY CYCLE < 0.5%, VGE = 15 V PULSE DURATION = 250 ms 20 16 TJ = 150C 12 TJ = 125C 8 4 TJ = 25C 0 2.5 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) RG = 10 W, L = 500 mH, VCE = 390 V 600 TJ = 125C, VGE = 12 V, VGE = 15 V 500 400 300 200 TJ = 25C, VGE = 12 V, VGE = 15 V 100 0 2 4 6 8 10 12 14 16 18 20 22 24 400 300 150 100 50 0 TJ = 25C, VGE = 12 V or 15 V 2 13 12 TJ = 25C or TJ = 125C, VGE = 15 V 4 6 8 10 12 14 16 18 20 8 10 12 14 16 18 20 22 24 RG = 10 W, L = 500 mH, VCE = 390 V 28 trI, RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 32 TJ = 25C or TJ = 125C, VGE = 12 V 2 6 Figure 8. TURN-OFF ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 14 10 4 ICE, COLLECTOR TO EMITTER CURRENT (A) 16 11 2.5 200 RG = 10 W, L = 500 mH VCE = 390 V 15 2 TJ = 125C, VGE = 12 V or 15 V 250 Figure 7. TURN-ON ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 17 1.5 RG = 10 W, L = 500 mH, VCE = 390 V 350 ICE, COLLECTOR TO EMITTER CURRENT (A) 18 1 Figure 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (mJ) EON2, TURN-ON ENERGY LOSS (mJ) Figure 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 700 0.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 22 24 TJ = 125C or TJ = 25C, VGE = 12 V 20 16 12 8 TJ = 25C or TJ = 125C, VGE = 15 V 4 0 24 ICE, COLLECTOR TO EMITTER CURRENT (A) 2 4 6 8 10 12 14 16 18 20 22 24 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN-ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT Figure 10. TURN-ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT www.onsemi.com 4 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS 115 90 RG = 10 W, L = 500 mH, VCE = 390 V 110 VGE = 12 V, VGE = 15 V, TJ = 125C 105 100 95 VGE = 12 V, VGE = 15 V, TJ = 25C 90 85 RG = 10 W, L = 500 mH, VCE = 390 V 80 tfI, FALL TIME (ns) td(OFF)I, TURN-OFF DELAY TIME (ns) TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 70 TJ = 125C, VGE = 12 V or 15 V 60 50 40 30 TJ = 25C, VGE = 12 V or 15 V 20 2 4 6 8 10 12 14 16 18 20 22 10 24 4 2 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 250 DUTY CYCLE < 0.5%, VCE = 10 V PULSE DURATION = 250 ms TJ = 25C 150 TJ = -55C 100 TJ = 125C 50 0 6 7 8 9 10 11 12 13 14 8 15 16 16 12 VCE = 600 V 10 6 25 ICE = 6 A 50 75 100 22 24 125 VCE = 400 V VCE = 200 V 2 0 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 0.4 0 20 4 0 10 ICE = 12 A 0.2 18 10 20 30 40 50 60 70 80 Figure 14. GATE CHARGE WAVEFORMS ICE = 24 A 0.6 16 QG, GATE CHARGE (nC) RG = 10 W, L = 500 mH, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF 0.8 14 8 Figure 13. TRANSFER CHARACTERISTIC 1.0 12 IG(REF) = 1 mA, RL = 25 W, TC = 25C 14 VGE, GATE TO EMITTER VOLTAGE (V) 1.2 10 Figure 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) Figure 11. TURN-OFF DELAY TIME vs. COLLECTOR TO EMITTER CURRENT 200 6 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE = 24 A 1 ICE = 12 A ICE = 6 A 0.1 150 TJ = 125C L = 500 mH, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF TC, CASE TEMPERATURE (C) 5 10 100 RG, GATE RESISTANCE (W) Figure 15. TOTAL SWITCHING LOSS vs. CASE TEMPERATURE Figure 16. TOTAL SWITCHING LOSS vs. GATE RESISTANCE www.onsemi.com 5 1000 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) C, CAPACITANCE (nF) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.4 3.0 FREQUENCY 1 MHz 2.5 2.0 CIES 1.5 COES 1.0 0.5 CRES 0 0 5 10 15 20 DUTY CYCLE < 0.5%, VGE = 15 V PULSE DURATION = 250 ms, TJ = 25C 2.3 2.2 ICE = 18 A 2.1 ICE = 12 A 2.0 ICE = 6 A 1.9 8 25 5 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 90 DUTY CYCLE < 0.5% PULSE DURATION = 250 ms 12 10 8 125C 25C 6 4 2 0 0 0.5 1.0 1.5 2.0 50 40 125C ta 30 25C trr 20 25C tb 10 2.5 25C ta 1 2 Qrr, REVERSE RECOVERY CHARGE (nc) trr, RECOVERY TIMES (ns) 400 25C ta 25C tb 300 400 500 600 700 800 4 5 6 7 8 9 10 11 12 Figure 20. RECOVERYTIMES vs. FORWARD CURRENT 125C ta 15 10 5 200 3 IEC, FORWARD CURRENT (A) 125C tb 25 20 16 125C tb 60 0 IEC/dt = 12 A, VCE = 390 V 40 35 30 15 125C trr 70 Figure 19. DIODE FORWARD CURRENT vs. FORWARD VOLTAGE DROP 50 45 14 13 dIEC/dt = 200 A/ms 80 VEC, FORWARD VOLTAGE (V) 65 60 55 12 Figure 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs. GATE TO EMITTER VOLTAGE trr, RECOVERY TIMES (ns) IEC, FORWARD CURRENT (A) Figure 17. CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE 14 11 10 VGE, GATE TO EMITTER VOLTAGE (V) 900 VCE = 390 V 350 300 125C ICE = 12 A 125C ICE = 6 A 250 200 25C ICE = 12 A 150 100 25C ICE = 6 A 50 0 200 1000 300 400 500 600 700 800 900 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/ms) diEC/dt, RATE OF CHANGE OF CURRENT (A/ms) Figure 21. RECOVERY TIMES vs. RATE OF CHANGE OF CURRENT Figure 22. STORED CHARGE vs. RATE OF CHANGE OF CURRENT www.onsemi.com 6 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS ZqJC, NORMALIZED THERMAL RESPONSE TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 100 0.50 0.20 10-1 t1 0.10 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZqJC x RqJC) + TC SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1, RECTANGULAR PULSE DURATION (s) Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE TEST CIRCUIT AND WAVEFORMS HGTP12N60A4D DIODE TA49371 90% 10% VGE EOFF L = 500 mH RG = 10 W EON2 VCE 90% DUT + - VDD = 390 V 10% ICE Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT t d(OFF)I t fI t rI t d(ON)I Figure 25. SWITCHING TEST WAVEFORMS www.onsemi.com 7 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HANDLING PRECAUTIONS FOR IGBTS Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDt LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC) / RqJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ORDERING INFORMATION Package Brand Shipping HGTG12N60A4D TO-247 12N60A4D 450 Units / Tube HGTP12N60A4D TO-220AB 12N60A4D 800 Units / Tube HGT1S12N60A4DS TO-263AB 12N60A4D 800 Units / Tube Part Number For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60A4DS9A. Saber is a registered trademark of Sabremark Limited Partnership. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220-3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO-220-3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE E SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 25 OCT 2019 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb-Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. D2PAK-3 (TO-263, 3-LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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