K3010P, K3010PG Series
www.vishay.com Vishay Semiconductors
Rev. 2.2, 01-Jun-12 1Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototriac Output, Non-Zero Crossing, 250 VDRM
DESCRIPTION
The K3010P, K3010PG series consists of a photo-transistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 6-pin plastic dual inline package
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• BSI: BS EN60065:2002 and IEC 60065:2001, certificate
number 7955. An BS EN60950-1:2006 certificate number
7956
• DIN EN 60747-5-5
• CQC: GB8898-2001
FEATURES
• Isolation materials according to UL 94 V-0
• Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high
common mode rejection
•I
FT of 5 mA, 10 mA, and 15 mA
• Rated impulse voltage (transient overvoltage)
VIOTM = 8 kVpeak
• Isolation test voltage, 5300 VRMS, t = 1 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I to IV at mains voltage ≤ 300 V
• for appl. class I to IV at mains voltage ≤ 600 V
according to DIN EN60747-5-5 (VDE0884), suitable for:
- Monitors
- Air conditioners
- Line switches
- Solid state relay
- Microwave
Note
• G = leadform 10.16 mm; G is not marked on the body.
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
i179041-2
DIP
SMD
ORDERING INFORMATION
K3010P#X0##T
PART NUMBER TRIGGER
CURRENT
BIN
PACKAGE OPTION TAPE AND
REEL
AGENCY CERTIFIED/PACKAGE TRIGGER CURRENT, IFT
VDE, cUL, BSI 5 mA 10 mA 15 mA
DIP-6 K3012P K3011P K3010P
DIP-6, 400 mil K3012PG K3011PG K3010PG
SMD-6, option 7 K3012P-X007T - K3010P-X007T
10.16 mm
7.62 mm
DIP-6 G leadform
> 0.7 mm
Option 7
K3010P, K3010PG Series
www.vishay.com Vishay Semiconductors
Rev. 2.2, 01-Jun-12 2Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054)
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Test voltage must be applied within dV/dt ratings.
(2) IFT is defined as a minimum trigger current.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR5V
Forward current IF80 mA
Forward surge current tp ≤ 10 μs IFSM 3A
Power dissipation Pdiss 100 mW
Junction temperature Tj100 °C
OUTPUT
Off state output terminal voltage VDRM 250 V
On state RMS current ITRM 100 mA
Peak surge current, non-repetitive tp ≤ 10 ms ITMS 1.5 A
Power dissipation Pdiss 300 mW
Junction temperature Tj100 °C
COUPLER
Isolation test voltage (RMS) t = 1 s VISO 5300 VRMS
Total power dissipation Ptot 350 mW
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to + 100 °C
Soldering temperature (1) 2 mm from case, t ≤ 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OUTPUT
Forward peak off-state voltage
(repetitive) IRDM = 100 nA VDRM (1) 250 V
Peak on-state voltage ITM = 100 mA VTM 1.5 3 V
Critical rate of rise of off-state voltage IFT = 0, IFT = 30 mA dV/dtcr 10 V/μs
dV/dtcrq 0.1 0.2 V/μs
COUPLER (2)
Collector emitter trigger current VS = 3 V, RL = 150 Ω
K3010P IFT 815mA
K3010PG IFT 815mA
K3011P IFT 510mA
K3011PG IFT 510mA
K3012P IFT 25mA
K3012PG IFT 25mA
Holding current IF = 10 mA, VS ≥ 3 V IH100 μA
K3010P, K3010PG Series
www.vishay.com Vishay Semiconductors
Rev. 2.2, 01-Jun-12 3Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Test Circuit for dV/dtcr and dV/dtcrq
Fig. 2
Fig. 3 - Motor Control Circuit
V~
RS
95 10813
Test condition:
dV/dtcr
VS= 2/3 VDRM
(sine wave)
RL= 33 kΩ
dV/dt crq
Veff. = 30 V
(sine wave)
RL= 2 kΩ
IFT
RL
IF
≥
IFT
95 10814
dV/dt cr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off state to the on state
dV/dt crq Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from I
FT to zero
IF= 0
dV/dt cr
dV/dt crq
M
95 10815
270
TT L
+ 5 V
0.1 µF VAC ~
Galvanic seperation
K3010P, K3010PG Series
www.vishay.com Vishay Semiconductors
Rev. 2.2, 01-Jun-12 4Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• According to DIN EN60747-5-5 (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 4 - Safety Parameter Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to
DIN EN60747-5-5/DIN EN60747-; IEC 60747
SAFETY AND INSULATION RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Climatic classification (according to IEC 68 part 1) 55/100/21
Pollution degree (DIN VDE 0109) 2
Comparative tracking index CTI 175
Peak transient overvoltage VIOTM 8000 Vpeak
Peak working insulation voltage VIORM 890 Vpeak
Partial discharge test voltage (method a, Vpd = VIORM x 1.875) Vpd 1669 Vpeak
Isolation resistance at Tamb = 100 °C, VDC = 500 V RIO 1011 Ω
Isolation resistance at Tamb = 25 °C, VDC = 500 V RIO 1012 Ω
Safety rating - power PSO 265 mW
Safety rating - input current ISI 130 mA
Safety rating - temperature TSI 150 °C
Clearance distance (Standard DIP-6) 7 mm
Creepage distance (Standard DIP-6) 7 mm
Clearance distance (400 mil DIP-6) 8 mm
Creepage distance (400 mil DIP-6) 8 mm
0
50
100
150
200
250
300
0 25 50 75 100 125 150
Tamb - Ambient Temperature (°C)
Psi (mW)
Isi (mA)
Max. Safety Ratings
t
13930
t1
, t2 = 1 s to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
Vpd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
K3010P, K3010PG Series
www.vishay.com Vishay Semiconductors
Rev. 2.2, 01-Jun-12 5Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Threshold Forward Current vs.
Ambient Temperature
Fig. 9 - Relative On-State vs. Ambient Temperature
Fig. 10 - Off-State Current vs. Ambient Temperature
Fig. 11 - Collector Current vs. Forward Current
0
100
200
300
400
Phototransistor
IR-diode
Coupled device
020406080100
Tamb
- Ambient Temperature (°C)
P
tot
- Total Power Dissipation (mW)
9611701
0.1
1
10
100
1000
0
VF - Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4 2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 20 30 40 50 60 70 8010
Tamb - Ambient Temperature (°C)
96 11922
VS= 3 V
RL= 150 Ω
I - Relative Threshold Forward Current
FTrel
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 20 30 40 50 60 70 8010
Tamb - Ambient Temperature (°C)
96 11923
V - Relative On-State Voltage
TMrel
IFIFT
IT= 100 mA
=
1
10
100
20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
96 11924
VDR = 100 V
IF= 0
I - Off-State Current (nA)
DRM
- 250
- 200
- 150
- 100
- 50
0
50
100
150
200
250
- 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 2.0 2.5
VTM - On-State Voltage (V)
96 11925
I - On-State Current (mA)
TM
IFT = 15 mA
K3010P, K3010PG Series
www.vishay.com Vishay Semiconductors
Rev. 2.2, 01-Jun-12 6Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS millimeters
PACKAGE MARKING (example)
Notes
• The “G” of the 400 mil G leadform type is not marked on the body.
• The VDE logo is only marked on option1 parts.
i178004
0.25 typ.
2.95 ± 0.5
3.555 ± 0.255
0.8 min.
7.62 typ.
0.85 ± 0.05
2.54 typ.
1 min.
0.5 ± 0.05
6.4 ± 0.1
8.6 ± 0.1
Pin one ID
6
5
4
12
3
18°
3° to 9°
7.62 to 8.81
4° typ.
ISO method A
1.2 ± 0.1
0.35
0.25
10.16
10.92
7.8
7.4
10.36
9.96
G Series
18450-12
Option 7
8 min.
7.62 typ.
4.3 ± 0.3
0.6 min.
10.3 max.
0.7 min.
2.54 R 0.25
1.78
0.76
1.52
8 min.
11.05
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Revision: 12-Mar-12 1Document Number: 91000
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