Dual Enhancement Mode MOSFET (N-and P-Channel)
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9932CK
Features
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
Ordering and Marking Information
APM9932C
H andling Code
T em p. Range
Package C ode
Package C ode
K : SOP-8
O perating Junction Temp. Range
C : - 5 5 to 15 0 ° C
H andling Code
T U : T ube T R : T ape & R eel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM9932C K : APM9932C
XXXXX XXXXX - Date Code
Lead Free Code
• N-Channel
20V/9A,
RDS(ON) =12mΩ(typ.) @ VGS = 4.5V
RDS(ON) =18mΩ(typ.) @ VGS = 2.5V
••
••
• P-Channel
-20V/-6A,
RDS(ON) =30mΩ(typ.) @ VGS =-4.5V
RDS(ON) =50mΩ(typ.) @ VGS =-2.5V
••
••
• Super High Dense Cell Design
••
••
• Reliable and Rugged
••
••
• Lead Free Available (RoHS Compliant)
G1
S1
S2G2
DDDD
Top View of SOP − 8
D2
(5)
G2
S2
D2
(6)
(4)
(3)
G1
S1
D1 D1
(8) (7)
(2)
(1)
N-P Channel MOSFET
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw2
APM9932CK
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter N Channel P Channel Unit
VDSS Drain-Source Voltage 20 -20
VGSS Gate-Source Voltage ±16 ±12
V
ID* Continuous Drain Current 9 -6
IDM* 300µs Pulsed Drain Current
9
30 30 -20
A
IS* Diode Continuous Forward Current 1.5 -1.2
A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Power Dissipation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM9932CK
Symbol Parameter Test Condition Min. Typ. Max.
Unit
Static Characteristics VGS=0V, IDS=250µA N-Ch 20
BVDSS Drain-Source Breakdown
Voltage VGS=0V, IDS=-250µA P-Ch -20 V
VDS=16V, VGS=0V N-Ch 1
IDSS Zero Gate Voltage Drain
Current VDS=-16V, VGS=0V P-Ch -1
µA
VDS=VGS, IDS=250µA N-Ch 0.55 0.7 1.5
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA P-Ch -0.45 -0.6 -1 V
VGS=±16V, VDS=0V N-Ch
±100
IGSS Gate Leakage Current VGS=±12V, VDS=0V P-Ch
±100
nA
VGS=4.5V, IDS=9A N-Ch 12 18
VGS=-4.5V, IDS=-6A P-Ch 30 45
VGS=2.5V, IDS=6A N-Ch 18 27
RDS(ON) a Drain-Source On-State
Resistance
VGS=-2.5V, IDS=-4A P-Ch 50 65
mΩ
ISD=1.5A, VGS=0V N-Ch 0.75 1.3
VSDa Diode Forward Voltage ISD=-1.2A, VGS=0V P-Ch -0.8 -1.3
V
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw3
APM9932CK
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9932CK
Symbol Parameter Test Condition Min. Typ. Max.
Unit
Dynami c Characterist ics b N-Ch 1205
Ciss Input Capacitance P-Ch 1210
N-Ch 310
Coss Output Capacitance P-Ch 310
N-Ch 210
Crss Reverse Tr ansfer
Capacitance
N-Channel
VGS=0V,
VDS=20V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-20V,
Frequency=1.0MHz P-Ch 205
pF
N-Ch 8 15
td(ON) Turn-on Delay Time P-Ch 7 13
N-Ch 10 17
Tr Turn-on Rise Tim e P-Ch 9 16
N-Ch 29 43
td(OFF) Turn-off Delay Time P-Ch 27 42
N-Ch 7 11
Tf Turn-off Fall Ti me
N-Channel
VDD=10V , RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
P-Channel
VDD=- 10V , RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω P-Ch 6 9
ns
Gate Charge Ch aract eristi cs b N-Ch 14 22
Qg Total Gate Charge P-Ch 17 25
N-Ch 5
Qgs Gate-Source Charge P-Ch 5.2
N-Ch 2.8
Qgd Gate-Drain Charge
N-Channel
VDS=10V, V GS=4.5V,
IDS=6A
P-Channel
VDS=-10V, VGS=-4.5V,
IDS=-5A
P-Ch 3.6
nC
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw4
APM9932CK
1E-4 1E-3 0.01 0.1 1 10 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
N-Channel
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
0.01 0.1 1 10 100
0.01
0.1
1
10
100
Rds(on) Limit
1s
TA=25OC
10ms
1ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw5
APM9932CK
RDS(ON) - On - Resistance (Ω)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain-Source V oltage (V)
ID - Drain Current (A)
Output Characteristics
T ransfer Characteristics
VGS - Gate - Source Voltage (V)
ID - Drain Current (A)
Normalized Threshold V oltage
Typical Characteristics (Cont.)
0246810
0
4
8
12
16
20
2.5V
2V
VGS= 3, 4, 5, 6, 7, 8, 9, 10V
0 5 10 15 20 25 30
0
5
10
15
20
25
30
VGS=4.5V
VGS=2.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
4
8
12
16
20
Tj=125oC
Tj=25oCTj=-55oC
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IDS=250µΑ
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw6
APM9932CK
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Characteristics (Cont.)
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RON@Tj=25oC: 12mΩ
VGS = 4.5V
IDS = 9A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
20
Tj=150oC
Tj=25oC
0 4 8 12 16 20
0
400
800
1200
1600
2000 Frequency=1MHz
Crss Coss
Ciss
0 5 10 15 20 25 30
0
2
4
6
8
10
VDS=10 V
ID = 6 A
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw7
APM9932CK
1E-4 1E-3 0.01 0.1 1 10 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics (Cont.)
Power Dissipation
Ptot - Power (W)
Tj - Junction T emperature (°C)
-ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
-VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
-ID - Drain Current (A)
P-Channel
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140 160
0
2
4
6
8
0.01 0.1 1 10 100
0.01
0.1
1
10
50
1ms
Rds(on) Limit
1s
TA=25OC
10ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw8
APM9932CK
Typical Characteristics (Cont.)
RDS(ON) - On - Resistance (Ω)
Drain-Source On Resistance
-ID - Drain Current (A)-VDS - Drain - Source V oltage (V)
-ID - Drain Current (A)
Output Characteristics
Tj - Junction Temperature (°C)
Gate Threshold VoltageT ransfer Characteristics
-VGS - Gate - Source Voltage (V)
-ID - Drain Current (A)
Normalized Threshold V oltage
02468
0
2
4
6
8
10
-2V
VGS= -2.5, -3, -4, -5, -6, -7, -8, -9, -10V
0246810
10
20
30
40
50
60
70
80
VGS= -2.5V
VGS= -4.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
Tj=125oC
Tj=25oCTj=-55oC
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IDS= -250µΑ
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw9
APM9932CK
Typical Characteristics (Cont.)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
-IS - Source Current (A)
-VDS - Drain - Source V oltage (V)
C - Capacitance (pF)
Capacitance Gate Charge
QG - Gate Charge (nC)
-VGS - Gate - source Voltage (V)
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RON@Tj=25oC: 30mΩ
VGS = -4.5V
IDS = -6A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
Tj=150oC
Tj=25oC
0 4 8 121620
0
400
800
1200
1600
2000
Ciss
Frequency=1MHz
Crss
Coss
0 5 10 15 20 25 30 35
0
2
4
6
8
10 VDS= -10V
ID= -5A
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw10
APM9932CK
Packaging Information
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
φ 18
°8°
HE
e1 e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw11
APM9932CK
Ter minal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 2 5 C to P ea k
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Z one
TL to TP
°
Reflow Condition (IR/Convection or VPR Reflow)
Classificatin Reflow Profiles
Physical Specifications
Sn-Pb Eutectic Assembly Pb-Free Assembly
Profile Feature Large Body Small Body Large Body Small Body
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Mix (Tsmax)
- Ti me (min to max)(ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Tsmax to TL
- Ramp-up Rate 3°C/second max
Tsmax to TL
- Temperature(TL)
- Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C 245 +0/-5°C 250 +0/-5°C
Time within 5°C of actual Peak
Temperature(tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw12
APM9932CK
Carrier Tape & Reel Dimensions
A
J
B
T2
T1
C
t
Ao
E
W
Po P
Ko
Bo
D1
D
F
P1
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Reliability Test Program
Application A B C J T1 T2 W P E
330±1 62 ± 1.5 12.75 +
0.1 5 2 + 0.5 12.4 +0.2 2± 0.2 12 + 0.3
- 0.1 8± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko t
SOP-8 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
(mm)
Copyright ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
www.anpec.com.tw13
APM9932CK
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin T ien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8 12 9.3 2500
