ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB(R) Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. Dimensions in inches and (millimeters) * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * 1500W peak pulse power capabililty with a 10/1000s waveform, repetition rate (duty cycle): 0.05% * Excellent clamping capability * Low incremental surge resistance * Very fast response time * Ideal for data and bus line applications * High temperature soldering guaranteed: 265OC/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension * Includes 1N6373 thru 1N6386 Mechanical Data Case: Molded plastic body over passivated junction Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: For unidirectional types the color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.045 oz., 1.2 g Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 10K/carton 54 - 1.4K per 13" paper Reel (52mm horiz. tape), 4.2K/carton 73 - 1K per horiz. tape & Ammo box, 10K/carton Maximum Ratings and Thermal Characteristics (T Parameter Stand Off Voltage 5.0 to 18V Peak Pulse Power 1500W A = 25C unless otherwise noted) Symbol Limit Unit Peak pulse power dissipation with a 10/1000s waveform(1) (Fig. 1) PPPM Minimum 1500 W Peak pulse current wih a 10/1000s waveform(1) (Fig. 3) IPPM See Table 1 & 2 A PM(AV) 6.5 W IFSM 200 A VF 3.5 V TJ, TSTG -55 to +175 Steady state power dissipation, TL = 75OC, at lead lengths 0.375" (9.5mm) Peak forward surge current, 8.3ms single half sine-wave unidirectional only (2) Maximum instantaneous forward voltage at 100A for unidirectional only Operating junction and storage temperature range C O Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2 (2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum Document Number 88356 23-May-03 www.vishay.com 1 ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (JEDEC Registered Data) Table 1 - Unidirectional Types Ratings at 25C ambient temperature unless otherwise specified. VWM (V) Minimum(3) Breakdown Voltage at 1.0mA V(BR) (V) Maximum Reverse Leakage at VWM ID (A) Maximum Clamping Voltage at lPP = 1.0A Vc (V) Maximum Clamping Voltage at lPP = 10A Vc (V) Maximum Peak Pulse Current IPP (A) Stand-Off Voltage JEDEC Type Number General Semiconductor Part Number 1N6373(2) ICTE-5(2) 5.0 6.0 300 7.1 7.5 160 1N6374 ICTE-8 8.0 9.4 25.0 11.3 11.5 100 1N6375 ICTE-10 10.0 11.7 2.0 13.7 14.1 90 1N6376 ICTE-12 12.0 14.1 2.0 16.1 16.5 70 1N6377 ICTE-15 15.0 17.6 2.0 20.1 20.6 60 1N6378 ICTE-18 18.0 21.2 2.0 24.2 25.2 50 Electrical Characteristics (JEDEC Registered Data) Table 2 - Bidirectional Types Ratings at 25C ambient temperature unless otherwise specified. VWM (V) Minimum(3) Breakdown Voltage at 1.0mA V(BR) (V) Maximum Reverse Leakage at VWM ID (A) Maximum Clamping Voltage at lPP = 1.0A Vc (V) Maximum Clamping Voltage at lPP = 10A Vc (V) Maximum Peak Pulse Current IPP (A) Stand-Off Voltage JEDEC Type Number General Semiconductor Part Number 1N6382 ICTE-8C 8.0 9.4 50.0 11.4 11.6 100 1N6383 ICTE-10C 10.0 11.7 2.0 14.1 14.5 90 1N6384 ICTE-12C 12.0 14.1 2.0 16.7 17.1 70 1N6385 ICTE-15C 15.0 17.6 2.0 20.8 21.4 60 1N6386 ICTE-18C 18.0 21.2 2.0 24.8 25.5 50 Notes: (1) " C " Suffix indicates bi-directional (2) ICTE-5 and 1N6373 are not available as bi-directional (3) The minimum breakdown voltage as shown takes into consideration the 1 Volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages are employed. (4) Clamping Factor: 1.33 at full rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V(BR) (Breakdown Voltage) as measured on a specific device. www.vishay.com 2 Document Number 88356 23-May-03 ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 -- Pulse Derating Curve 10 1 0.1s 1.0s 100s 10s 1.0ms 10ms td -- Pulse Width (sec.) Fig. 3 -- Pulse Waveform IPPM -- Peak Pulse Current, % IRSM 150 Peak Value IPPM 100 Half Value - IPPM 2 td 0 1.0 0 3.0 2.0 4.0 t -- Time (ms) Fig. 5 -- Typical Junction Capacitance CJ -- Junction Capacitance (pF) 100,000 Measured at Zero Bias Bidirectional Type Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10,000 50 25 0 0 50 75 100 125 150 175 200 Fig. 4 -- Typical Junction Capacitance Uni-Directional Measured at Zero Bias 10,000 TJ = 25C f = 1.0MHz Vsig = 50mVp-p Measured at Stand-Off Voltage, VWM 1000 100 1.0 10 100 200 V(BR) -- Breakdown Voltage (V) Measured at Stand-Off Voltage, VWM 1 Fig. 6 -- Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 10 100 200 V(BR) -- Breakdown Voltage (V) Fig. 7 -- Typical Characteristics Clamping Voltage 50 Uni-Directional Only TA = 25C 6 8 10 12 14 16 18 20 ICTE-18 ICTE-15 ICTE-12 ICTE-10 ICTE-8 ICTE-5 10 1 25 TA -- Ambient Temperature (C) 1,000 100 IPP -- Peak Pulse Current (A) 75 100,000 10/1000sec. Waveform as defined by R.E.A. 50 100 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. CJ -- Junction Capacitance (pF) 0.1 Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 22 VC -- Clamping Voltage (V) Document Number 88356 23-May-03 24 26 28 IFSM -- Peak Forward Surge Current (A) PPPM -- Peak Pulse Power (kW) Fig. 1 -- Peak Pulse Power Rating Curve 100 200 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 100 50 10 1 5 10 50 100 Number of Cycles at 60 Hz www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1