SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A *Built-in Free wheeling Diode makes efficient anti saturation operation. C P *Low base drive requirement. B E SYMBOL RATING UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V DC IC 5 Pulse ICP 10 Base Current IB 2 A Collector Power Dissipation (Tc=25) PC 30 W Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range L L R J M D D A N N H M N P Q R S 0.5 Typ G H J K L 1. BASE 1 2 3 2. COLLECTOR Q Collector Current K CHARACTERISTIC G MAXIMUM RATING (Ta=25) MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S *Suitable for half bridge light ballast Applications. 3. EMITTER Equivalent Circuit C TO-220IS B ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC E SYMBOL IEBO VEB=9V, IC=0 MIN. TYP. MAX. UNIT - - 10 A hFE(1) VCE=5V, IC=1A 18 - 35 hFE(2) VCE=5V, IC=2A 8 - - IC=1A, IB=0.2A - - 0.5 IC=2A, IB=0.5A - - 0.6 IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - 1.2 IC=2A, IB=0.5A - - 1.6 Cob VCB=10V, f=1MHz - 65 - pF Transition Frequency fT VCE=10V, IC=0.5A 4 - - MHz Turn-On Time ton - - 0.15 S 150 Emitter Cut-off Current TEST CONDITION - - 5 S VCC =300V - - 0.8 S IF=2A - - 1.6 V IF=0.4A - 800 - nS IF=1A - 1.4 - S IF=2A - 1.9 - S DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance VCE(sat) VBE(sat) Storage Time tstg Fall Time tf Diode Forward Voltage VF *Reverse recovery tims (di/dt=10A/S) trr OUTPUT 300S IB1 INPUT IB2 IB1=0.4A, IB2=-1A DUTY CYCLE < = 2% V V I B1 I B2 *Pulse Test : Pulse Width = 5mS, Duty cycles10% Note : hFE Classification R : 18~27, O : 23~35 2010. 10. 11 Revision No : 2 1/3 MJE13005DF VBE(sat),VCE(sat) - IC DC CURRENT GAIN hFE 100 VCE=1V Ta=125 C -20 C 25 C 10 1 0.01 0.1 1 10 COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat),VCE(sat) (V) hFE - IC 10 IC/IB=4 VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 COLLECTOR CURRENT IC (A) 0.1 Cob - VCB VCE=5V Ta=125 C 25 C -20 C 10 0.1 1 10 COLLECTOR OUTPUT CAPACITANCE Cob (pF) DC CURRENT GAIN hFE 100 1k COMMON EMITTER f=1MHz Ta=25 C 500 300 100 50 30 10 5 3 1 1 3 5 4 IB=200mA 3 IB=100mA 2 IB=50mA 1 IB=0V 0 3 4 5 6 7 8 9 10 COLLECTOR EMITTER VOLTAGE VCE (V) 2010. 10. 11 100 300 1k 10 IB=500mA IB=400mA IB=300mA 2 30 SWITCHING CHARACTERISTIC Revision No : 2 SWITCHING TIME (S) COLLECTOR CURRENT IC (A) IC - VCE 1 10 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (A) 0 10 COLLECTOR CURRENT IC (A) hFE - IC 1 0.01 1 tstg 1 tf 0.1 VCC=300V 0.01 IC=5IB1,=-2.5IB2 0.1 1 10 COLLECTOR CURRENT IC (A) 2/3 MJE13005DF VF - IF 1.6 1.4 1.2 1.0 0.8 1.0 1.5 2.0 FORWARD DIODE VOLTAGE VF (V) REVERSE RECOVERY TIME trr (S) trr - IF 10 1 0.1 0.01 2010. 10. 11 50 Tc=Ta INFINITE HEAT SINK 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 10 REVERSE BIASED SAFE OPERATING AREA PC - Ta 45 1 FORWARD DIODE CURRENT IF (A) COLLECTOR CURRENT IC (A) COLLECTOR POWER DISSIPATION PC (W) FORWARD CURRENT IF (A) 0.1 150 175 AMBIENT TEMPERATURE Ta ( C) Revision No : 2 200 10 IB=2A VBE(off)=-5V L=100 H 8 6 4 2 0 0 100 200 300 400 500 600 700 800 900 COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V) 3/3