2010. 10. 11 1/3
SEMICONDUCTOR
TECHNICAL DATA
MJE13005DF
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
·Built-in Free wheeling Diode makes efficient anti saturation operation.
·Suitable for half bridge light ballast Applications.
·Low base drive requirement.
MAXIMUM RATING (Ta=25)
DIM MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
F
Q
123
L
P
N
B
G
J
M
D
NH
E
R
K
L
S0.5 Typ
S
D
AC
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Φ3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25)
E
C
B
Equivalent Circui
t
*Pulse Test : Pulse Width = 5mS, Duty cycles10%
Note : hFE Classification R : 18~27, O : 23~35
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 10 V
Collector Current DC IC5A
Pulse ICP 10
Base Current IB2 A
Collector Power Dissipation (Tc=25)PC30 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 μA
DC Current Gain
hFE(1) VCE=5V, IC=1A 18 - 35
hFE(2) VCE=5V, IC=2A 8 - -
Collector-Emitter Saturation Voltage VCE(sat)
IC=1A, IB=0.2A - - 0.5
V
IC=2A, IB=0.5A - - 0.6
IC=4A, IB=1A - - 1
Base-Emitter Saturation Voltage VBE(sat)
IC=1A, IB=0.2A - - 1.2 V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=1MHz - 65 - pF
Transition Frequency fTVCE=10V, IC=0.5A 4 - - MHz
Turn-On Time ton
IB1
150Ω
B1
I
CC
V =300V
IB2
IB2
300µS
IB1=0.4A, IB2=-1A
2%
OUTPUT
DUTY CYCLE
INPUT
<
=
- - 0.15 μS
Storage Time tstg - - 5 μS
Fall Time tf- - 0.8 μS
Diode Forward Voltage VFIF=2A - - 1.6 V
*Reverse recovery tims (di/dt=10A/μS) trr
IF=0.4A - 800 - nS
IF=1A - 1.4 - μS
IF=2A - 1.9 - μS
2010. 10. 11 2/3
MJE13005DF
Revision No : 2
COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
VOLTAGE VBE(sat),VCE(sat) (V)
SWITCHING CHARACTERISTIC
1
SWITCHING TIME (µS)
0.1
0.01
0.1
10
COLLECTOR CURRENT IC (A)
1
10
VCC=300V
IC=5IB1,=-2.5IB2
tf
tstg
Cob (pF)
COMMON
EMITTER
hFE - ICCob - VCB
VBE(sat),VCE(sat) - IC
0.01
1
0.1 1
100
hFE - IC
10
10
VCE=1V
0.01
1
0.1 1
100
10
10
VCE=5V
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
IC - VCE
0123456789
0
1
2
3
4
5
10
IB=0V
0.01
0.01
0.1 1
10
10
1
0.1
13
1
10 30 100 300 1
k
3
5
10
30
50
100
300
500
1k
f=1MHz
Ta=25 C
IC/IB=4
IB=500mA
IB=400mA
IB=300mA
IB=200mA
IB=100mA
IB=50mA
Ta=125 C
25 C
-20 C
Ta=125 C
25 C
-20 C
VCE(sat)
VBE(sat)
2010. 10. 11 3/3
MJE13005DF
Revision No : 2
0
COLLECTOR POWER DISSIPATION PC (W)
0
PC - Ta
25 50 75 100 125 150 175 200
10
5
15
25
35
45
20
30
40
50
Tc=Ta INFINITE HEAT SINK
AMBIENT TEMPERATURE Ta ( C)
FORWARD CURRENT IF (A)
REVERSE RECOVERY TIME trr (µS)
FORWARD DIODE CURRENT IF (A)
FORWARD DIODE VOLTAGE VF (V)
VF - IF
1.0
0.8
1.5 2.0
trr - IF
1.4
1.0
1.2
1.6
0.01 0.1 1
10
10
1
0.1
COLLECTOR CURRENT IC (A)
REVERSE BIASED SAFE
OPERATING AREA
COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V)
0
0 100 200 300 400 600 800700500 900
2
4
6
8
10
I
B
=2A
V
BE
(off)=-5V
L=100 H