2010. 10. 11 1/3
SEMICONDUCTOR
TECHNICAL DATA
MJE13005DF
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
·Built-in Free wheeling Diode makes efficient anti saturation operation.
·Suitable for half bridge light ballast Applications.
·Low base drive requirement.
MAXIMUM RATING (Ta=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
*Pulse Test : Pulse Width = 5mS, Duty cycles≤10%
Note : hFE Classification R : 18~27, O : 23~35
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 10 V
Collector Current DC IC5A
Pulse ICP 10
Base Current IB2 A
Collector Power Dissipation (Tc=25℃)PC30 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55~150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 μA
DC Current Gain
hFE(1) VCE=5V, IC=1A 18 - 35
hFE(2) VCE=5V, IC=2A 8 - -
Collector-Emitter Saturation Voltage VCE(sat)
IC=1A, IB=0.2A - - 0.5
V
IC=2A, IB=0.5A - - 0.6
IC=4A, IB=1A - - 1
Base-Emitter Saturation Voltage VBE(sat)
IC=1A, IB=0.2A - - 1.2 V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=1MHz - 65 - pF
Transition Frequency fTVCE=10V, IC=0.5A 4 - - MHz
Turn-On Time ton
- - 0.15 μS
Storage Time tstg - - 5 μS
Fall Time tf- - 0.8 μS
Diode Forward Voltage VFIF=2A - - 1.6 V
*Reverse recovery tims (di/dt=10A/μS) trr
IF=0.4A - 800 - nS
IF=1A - 1.4 - μS
IF=2A - 1.9 - μS