Dual IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
CM1200DB-34N
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
1
12/12 Rev. 1
Outline Drawing and Circuit Diagram
A
DD
F
E
C
42
3
E1 E2
G1 G2
C1 C2
1
B
GAB
AA
Z
H
N
T
R
4(E1)
3(C1)
2(C2)
1(E2)
C1
G1
E1
E2
G2
C2
P
Q
S
J
Q
U
W
V
Y
X
K (4 TYP)
M (3 TYP)
L
(6 PLACES)
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DB-34N is a 1700V
(VCES), 1200 Ampere Dual
IGBTMOD™ Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 1200 34
Dimensions Inches Millimeters
A 5.12±0.02 130.0±0.5
B 5.51±0.02 140.0±0.5
C 4.88±0.01 124.0±0.25
D 2.24±0.01 57.0±0.25
E 1.18±0.008 30.0±0.2
F 0.79±0.004 20.0±0.1
G 2.09±0.008 53.0±0.2
H 1.57±0.008 40.0±0.2
J 1.73±0.008 44.0±0.2
K M8 Metric M8
L 0.28 Dia. 7.0 Dia.
M M4 Metric M4
N 2.17±0.01 55.2±0.3
Dimensions Inches Millimeters
P 1.50+0.04/-0.0 38.0+1.0/-0.0
Q 0.2±0.008 5.0±0.2
R 0.65 Min. 16.5 Min.
S 0.30 Min. 7.7 Min.
T 0.47±0.008 11.85±0.2
U 1.16±0.02 29.5±0.5
V 0.45±0.008 11.5±0.2
W 0.55±0.008 14.0±0.2
X 1.10+0.04/-0.0 28.0+1.0/-0.0
Y 1.38±0.008 35.0±0.2
Z 0.63±0.008 16.0±0.2
AA 0.71±0.008 18.0±0.2
AB 2.24±0.008 57.0±0.2
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
212/12 Rev. 1
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM1200DB-34N Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Operating Temperature T
opr -40 to 125 °C
Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, Tc = 80°C) IC 1200 Amperes
Peak Collector Current (Pulse) ICM*1 2400 Amperes
Emitter Current (Tc = 25°C)*2 IE 1200 Amperes
Emitter Surge Current (Pulse)*2 IEM*1 2400 Amperes
Maximum Power Dissipation (Tc = 25°C, IGBT Part)*3 PC 6900 Watts
Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb
Module Weight (Typical) – 1.3 kg
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) Viso 4000 Volts
Maximum Short Circuit Pulse Width tpsc 10 µs
(VCC = 1200V, VCES ≤ 1700V, VGE = 15V, Tj = 125°C)
*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
opr(max) rating (125°C).
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (Tj) should not exceed Tj(max) rating (150°C).
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3
12/12 Rev. 1
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 4 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 120mA, VCE = 10V 6.0 7.0 8.0 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 1200A, VGE = 15V, Tj = 25°C*4 – 2.15 2.80 Volts
IC = 1200A, VGE = 15V, Tj = 125°C*4 – 2.40 – Volts
Input Capacitance Cies – 176 – nF
Output Capacitance Coes VCE = 10V, f = 100kHz, VGE = 0V – 9.6 – nF
Reverse Transfer Capacitance Cres – 2.8 – nF
Total Gate Charge QG VCC = 850V, IC = 1200A, VGE = 15V – 6.8 – µC
Emitter-Collector Voltage VEC*2 IE = 1200A, VGE = 0V, Tj = 25°C*4 – 2.60 3.30 Volts
IE = 1200A, VGE = 0V, Tj = 125°C*4 – 2.30 – Volts
Turn-On Delay Time td(on) VCC = 850V, IC = 1200A, – 1.00 – µs
Turn-On Rise Time tr VGE = ±15V, RG(on) = 1.3Ω, – 0.40 – µs
Turn-On Switching Energy Eon Tj = 125°C, Ls = 150nH, Inductive Load – 380 – mJ/P
Turn-Off Delay Time td(off) VCC = 850V, IC = 1200A, – 1.20 – µs
Turn-Off Fall Time tf VGE = ±15V, RG(off) = 3.3Ω, – 0.30 – µs
Turn-Off Switching Energy Eoff Tj = 125°C, Ls = 150nH, Inductive Load – 360 – mJ/P
Reverse Recovery Time trr*2 VCC = 850V, IC = 1200A, – 1.00 – µs
Reverse Recovery Current Irr*2 VGE = ±15V, RG(on) = 1.3Ω, – 560 – Amperes
Reverse Recovery Charge Qrr*2 Tj = 125°C, Ls = 150nH, – 300 – µC
Reverse Recovery Energy Erec*2 Inductive Load – 220 – mJ/P
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
412/12 Rev. 1
Thermal Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Q IGBT Part, 1/2 Module – – 0.018 °C/W
Thermal Resistance, Junction to Case Rth(j-c) D FWDi Part, 1/2 Module – – 0.040 °C/W
Contact Thermal Resistance, Case to Fin Rth(c-f) λgrease = 1W/m•K, 1/2 Module – 0.016 – °C/W
Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Comparative Tracking Index CTI – 600 – – –
Clearance Distance in Air da – 9.5 – – mm
Creepage Distance Along Surface ds – 15.0 – – mm
Internal Inductance LC-E(int) IGBT Part – 30 – nH
Internal Lead Resistance RC-E(int) TC = 25°C – 0.28 – mΩ
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
5
12/12 Rev. 1
Tj = 25°C
Tj = 125°C
VCE = 20V
VGE = 15V
f = 100kHz
Tj = 25°C
IC = 1200A
VCC = 850V
Tj = 25°C
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
400
800
0
2400
0635412
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
Tj = 125°C
1200
2000
1600
VGE = 20V
10V
12V
15V
8V
1
0
5
4
3
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
024001200 1600 2000400 800
Tj = 25°C
Tj = 125°C
Module
Chip
2
1
0
5
4
3
024001200 1600 2000400 800
024001200 1600 2000400 800
VGE = 15V
Tj = 25°C
Tj = 125°C
2
COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS)
EMITTER CURRENT, IE, (AMPERES)
100
200
300
0
500
VCC = 850V
VGE = ±15V
RG(on) = 1.3Ω
Tj = 125°C
400
400
800
0
2400
2000
01
2824
61
0
1200
1600
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARGE, Q
rr
, (μC)
EMITTER CURRENT, IE, (AMPERES)
0 20001500500 1000
1000
500
1500
2000
0
3000
VCC ≤ 1200V
VGE = ±15V
RG(off) ≥ 3.3Ω
Tj = 125°C
2500
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPA CITANCE, Cies, Coes, Cres, (pF)
10-1 100101102
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
103
101
100
102
Cies
Coes
Cres
GATE CHARGE, QG, (μC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0246810
16
12
8
4
0
COLLECTOR CURRENT, IC, (AMPERES)
101
102103
100
10-1
10-2
104
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on) tr
tf
VCC = 850V
VGE = ±15V
RG(on) = 1.3Ω
Tj = 125°C
Inductive Load
SWITCHING TIME, (µs)
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
612/12 Rev. 1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING ENERGIES, (mJ/PULSE)
1200
1000
800
0 400 800 1200 1600 2000
600
400
200
0
VCC = 850V
VGE = ±15V
RG(on) = 1.3Ω
RG(off) = 3.3Ω
Tj = 125°C
Inductive Load
2400
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
Eon
Eoff
Erec
GATE RESISTANCE, RG, (Ω) TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
1.0
10-1 100101
10-2
10-3
0.8
0.4
0.2
0.6
0
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.018°C/W
(IGBT)
Rth(j-c) =
0.040°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
SWITCHING ENERGIES, (mJ/PULSE)
2000
1200
1600
800
0246810
400
0
VCC = 850V
IC = 1200A
VGE = ±15V
Tj = 125°C
Inductive Load
12
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
Eon
Eoff
Erec