CM1200DB-34N Dual IGBTMODTM HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1200 Amperes/1700 Volts A D D U K (4 TYP) 4 2 Q F B C E 3 Y 1 Z E1 E2 AA G1 M (3 TYP) G2 V W C1 C2 L (6 PLACES) J H G AB N X 4(E1) T R S 2(C2) E1 C2 G1 G2 C1 E2 P Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Q 3(C1) 1(E2) Outline Drawing and Circuit Diagram Free-Wheel Diode Dimensions Inches Millimeters Dimensions A 5.120.02 130.00.5 P Inches Millimeters Isolated Baseplate for Easy Heat Sinking 1.50+0.04/-0.0 38.0+1.0/-0.0 B 5.510.02 140.00.5 Q 0.20.008 5.00.2 C 4.880.01 124.00.25 R 0.65 Min. 16.5 Min. D 2.240.01 57.00.25 S 0.30 Min. 7.7 Min. E 1.180.008 30.00.2 T 0.470.008 11.850.2 F 0.790.004 20.00.1 U 1.160.02 29.50.5 G 2.090.008 53.00.2 V 0.450.008 11.50.2 H 1.570.008 40.00.2 W 0.550.008 14.00.2 J 1.730.008 44.00.2 X K M8 Metric M8 Y 1.380.008 35.00.2 L 0.28 Dia. 7.0 Dia. Z 0.630.008 16.00.2 M M4 Metric M4 AA 0.710.008 18.00.2 N 2.170.01 55.20.3 AB 2.240.008 57.00.2 12/12 Rev. 1 Low Drive Power Low VCE(sat) Super-Fast Recovery 1.10+0.04/-0.0 28.0+1.0/-0.0 Applications: Traction Medium Voltage Drives High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1200DB-34N is a 1700V (VCES), 1200 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1200 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMODTM HVIGBT Module 1200 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol CM1200DB-34N Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Operating Temperature Topr -40 to 125 C Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES 20 Volts Collector Current (DC, Tc = 80C) IC 1200 Amperes Peak Collector Current (Pulse) ICM*1 2400 Amperes Emitter Current (Tc = 25C)*2 IE 1200 Amperes IEM*1 2400 Amperes PC 6900 Watts Max. Mounting Torque M8 Main Terminal Screws - 177 in-lb Max. Mounting Torque M6 Mounting Screws - 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws - 27 in-lb Module Weight (Typical) - 1.3 kg Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) Viso 4000 Volts Maximum Short Circuit Pulse Width (VCC = 1200V, VCES 1700V, VGE = 15V, Tj = 125C) tpsc 10 s Emitter Surge Current (Pulse)*2 Maximum Power Dissipation (Tc = 25C, IGBT Part)*3 *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Topr(max) rating (125C). *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Junction temperature (Tj) should not exceed Tj(max) rating (150C). 2 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMODTM HVIGBT Module 1200 Amperes/1700 Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V - - 4 mA VGE(th) IC = 120mA, VCE = 10V 6.0 7.0 8.0 Volts IGES VGE = VGES, VCE = 0V - - 0.5 A VCE(sat) IC = 1200A, VGE = 15V, Tj = 25C*4 - 2.15 2.80 Volts IC = 1200A, VGE = 15V, Tj = 125C*4 - 2.40 - Volts Input Capacitance Cies - 176 - nF Output Capacitance Coes Reverse Transfer Capacitance Cres Collector-Emitter Saturation Voltage Total Gate Charge VCE = 10V, f = 100kHz, VGE = 0V - 9.6 - nF - 2.8 - nF QG VCC = 850V, IC = 1200A, VGE = 15V - 6.8 - C VEC*2 IE = 1200A, VGE = 0V, Tj = 25C*4 - 2.60 3.30 Volts IE = 1200A, VGE = 0V, Tj = 125C*4 - 2.30 - Volts Turn-On Delay Time - 1.00 - s Emitter-Collector Voltage Turn-On Rise Time Turn-On Switching Energy td(on) VCC = 850V, IC = 1200A, tr VGE = 15V, RG(on) = 1.3, - 0.40 - s Eon Tj = 125C, Ls = 150nH, Inductive Load - 380 - mJ/P Turn-Off Delay Time td(off) VCC = 850V, IC = 1200A, - 1.20 - s Turn-Off Fall Time tf VGE = 15V, RG(off) = 3.3, - 0.30 - s Turn-Off Switching Energy Eoff Tj = 125C, Ls = 150nH, Inductive Load - 360 - mJ/P Reverse Recovery Time trr*2 VCC = 850V, IC = 1200A, - 1.00 - s VGE = 15V, RG(on) = 1.3, - 560 - Amperes Tj = 125C, Ls = 150nH, - 300 - C Inductive Load - 220 - mJ/P *2 Reverse Recovery Current Irr Reverse Recovery Charge Qrr*2 Reverse Recovery Energy *2 Erec *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *4 Pulse width and repetition rate should be such as to cause negligible temperature rise. 12/12 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMODTM HVIGBT Module 1200 Amperes/1700 Volts Thermal Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Q IGBT Part, 1/2 Module - - 0.018 C/W Thermal Resistance, Junction to Case Rth(j-c) D FWDi Part, 1/2 Module - - 0.040 C/W Rth(c-f) grease = 1W/m*K, 1/2 Module - 0.016 - C/W Contact Thermal Resistance, Case to Fin Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics 4 Symbol Test Conditions Min. Typ. Max. Units Comparative Tracking Index CTI - 600 - - - Clearance Distance in Air da - 9.5 - - mm Creepage Distance Along Surface ds - 15.0 - - mm Internal Inductance LC-E(int) IGBT Part - 30 - nH Internal Lead Resistance RC-E(int) TC = 25C - 0.28 - m 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMODTM HVIGBT Module 1200 Amperes/1700 Volts OUTPUT CHARACTERISTICS (TYPICAL) 2000 12V VGE = 20V 1600 10V 1200 800 400 0 1 2 3 4 5 6 3 2 1 0 0 400 1600 1200 800 400 0 800 1200 1600 2000 2400 VCE = 20V Tj = 25C Tj = 125C 2000 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 3 2 1 0 400 Cies 102 101 Coes VGE = 15V f = 100kHz Tj = 25C 100 10-1 800 1200 1600 2000 2400 100 101 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 100 0 400 800 1200 1600 2000 2400 EMITTER CURRENT, IE, (AMPERES) 12/12 Rev. 1 COLLECTOR CURRENT, IC, (AMPERES) 200 2000 1500 VCC 1200V VGE = 15V RG(off) 3.3 Tj = 125C Module Chip 1000 500 0 500 VCC = 850V VGE = 15V RG(on) = 1.3 Tj = 125C Inductive Load 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 104 GATE CHARGE, VGE 20 2500 0 10-1 COLLECTOR CURRENT, IC, (AMPERES) 3000 300 tr tf 10-2 102 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 400 td(off) td(on) 100 Cres COLLECTOR CURRENT, IC, (AMPERES) VCC = 850V VGE = 15V RG(on) = 1.3 Tj = 125C 12 101 SWITCHING TIME, (s) VGE = 15V Tj = 25C Tj = 125C 500 REVERSE RECOVERY CHARGE, Qrr, (C) 4 EMITTER CURRENT, IE, (AMPERES) 4 0 Tj = 25C Tj = 125C COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 5 0 2400 5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 0 8V TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 15V Tj = 125C CAPACITANCE, Cies, Coes, Cres, (pF) COLLECTOR CURRENT, IC, (AMPERES) 2400 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) IC = 1200A VCC = 850V Tj = 25C 16 12 8 4 0 0 2 4 6 8 10 GATE CHARGE, QG, (C) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V VGE = 15V RG(on) = 1.3 RG(off) = 3.3 Tj = 125C Inductive Load Eon Eoff Erec 1000 800 600 400 200 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT, IC, (AMPERES) 6 2000 SWITCHING ENERGIES, (mJ/PULSE) SWITCHING ENERGIES, (mJ/PULSE) 1200 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V IC = 1200A VGE = 15V Tj = 125C Inductive Load Eon Eoff Erec 1600 1200 800 400 0 0 2 4 6 8 GATE RESISTANCE, RG, () 10 12 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) CM1200DB-34N Dual IGBTMODTM HVIGBT Module 1200 Amperes/1700 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.018C/W (IGBT) Rth(j-c) = 0.040C/W (FWDi) 0.6 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) 12/12 Rev. 1