BAS86
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88132 www.vishay.com
10-May-02 1
New Product
Schottky Diode
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Continuous Reverse Voltage VR50 V
Forward Continuous Current at Tamb = 25°CI
F200(1) mA
Repetitive Forward Current at tp < 1s, υ≤0.5,Tamb = 25°CI
FRM 500(1) mA
Power Dissipation at Tamb = 25°CP
tot 200(1) mW
Thermal Resistance Junction to Ambiant Air RθJA 300(1) °C/W
Junction Temper ature Tj125 °C
Ambient Operating Temperature Range Tamb –65 to +125 °C
Storage Temperature Range TS–65 to +150 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Features
• For general pur pose applications
• This diode features low tur n-on voltage.The
devices are protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• This diode is also available in a DO-35 case with
type designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13”reel (8mm tape), 20K/box
D2/2.5K per 7”reel (8mm tape), 20K/box
.146 ( 3.7) .019 (0.48)
Ca thode Band
.130 ( 3.3)
.051 ( 1.3)
.011 (0.28)
.063 (1.6)Dia.
MiniMELF (SOD-80C)
Dimensions in inches and (millimeters)
BAS86
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88132
210-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = 10µA (pulsed) 50 ——V
Leakage Current IRVR = 25V —0.2 0.5 µA
PulseTest tp< 300µs,δ<2%
IF = 0.1mA —0.200 0.300
F orward Voltage VFIF = 1mA —0.275 0.380 V
IF = 10mA —0.365 0.450
IF = 30mA —0.460 0.600
IF= 100mA —0.700 0.900
Capacitance Ctot VR= 1V, f = 1MHz —— 8pF
Reverse Recover y Time trr IF= 10mA, IR = 10mA —— 5ns
IR =1mA
