TL/F/5982
CD4093BM/CD4093BC Quad 2-Input NAND Schmitt Trigger
February 1993
CD4093BM/CD4093BC Quad
2-Input NAND Schmitt Trigger
General Description
The CD4093B consists of four Schmitt-trigger circuits. Each
circuit functions as a 2-input NAND gate with Schmitt-trigger
action on both inputs. The gate switches at different points
for positive and negative-going signals. The difference be-
tween the positive (VTa) and the negative voltage (VTb)is
defined as hysteresis voltage (VH).
All outputs have equal source and sink currents and con-
form to standard B-series output drive (see Static Electrical
Characteristics).
Features
YWide supply voltage range 3.0V to 15V
YSchmitt-trigger on each input
with no external components
YNoise immunity greater than 50%
YEqual source and sink currents
YNo limit on input rise and fall time
YStandard B-series output drive
YHysteresis voltage (any input) TAe25§C
Typical VDD e5.0V VHe1.5V
VDD e10V VHe2.2V
VDD e15V VHe2.7V
Guaranteed VHe0.1 VDD
Applications
YWave and pulse shapers
YHigh-noise-environment systems
YMonostable multivibrators
YAstable multivibrators
YNAND logic
Connection Diagram
Dual-In-Line Package
TL/F/59821
Top View
Order Number CD4093B
C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Notes1&2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
DC Supply Voltage (VDD)b0.5 to a18 VDC
Input Voltage (VIN)b0.5 to VDD a0.5 VDC
Storage Temperature Range (TS)b65§Ctoa
150§C
Power Dissipation (PD)
Dual-In-Line 700 mW
Small Outline 500 mW
Lead Temperature (TL)
(Soldering, 10 seconds) 260§C
Recommended Operating
Conditions (Note 2)
DC Supply Voltage (VDD) 3 to 15 VDC
Input Voltage (VIN) 0 to VDD VDC
Operating Temperature Range (TA)
CD4093BM b55§Ctoa
125§C
CD4093BC b40§Ctoa
85§C
DC Electrical Characteristics CD4093BM (Note 2)
Symbol Parameter Conditions b55§Ca25§Ca125§CUnits
Min Max Min Typ Max Min Max
IDD Quiescent Device VDD e5V 0.25 0.25 7.5 mA
Current VDD e10V 0.5 0.5 15.0 mA
VDD e15V 1.0 1.0 30.0 mA
VOL Low Level VIN eVDD,
l
IO
l
k1mA
Output Voltage VDD e5V 0.05 0 0.05 0.05 V
VDD e10V 0.05 0 0.05 0.05 V
VDD e15V 0.05 0 0.05 0.05 V
VOH High Level VIN eVSS,
l
IO
l
k1mA
Output Voltage VDD e5V 4.95 4.95 5 4.95 V
VDD e10V 9.95 9.95 10 9.95 V
VDD e15V 14.95 14.95 15 14.95 V
VTbNegative-Going Threshold
l
IO
l
k1mA
Voltage (Any Input) VDD e5V, VOe4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V
VDD e10V, VOe9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V
VDD e15V, VOe13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V
VTaPositive-Going Threshold
l
IO
l
k1mA
Voltage (Any Input) VDD e5V, VOe0.5V 2.75 3.65 2.75 3.3 3.5 2.65 3.5 V
VDD e10V, VOe1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V
VDD e15V, VOe1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V
VHHysteresis (VTabVTb)V
DD e5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V
(Any Input) VDD e10V 1.0 4.30 1.0 2.2 4.0 0.70 4.0 V
VDD e15V 1.5 6.30 1.5 2.7 6.0 1.20 6.0 V
IOL Low Level Output VIN eVDD
Current (Note 3) VDD e5V, VOe0.4V 0.64 0.51 0.88 0.36 mA
VDD e10V, VOe0.5V 1.6 1.3 2.25 0.9 mA
VDD e15V, VOe1.5V 4.2 3.4 8.8 2.4 mA
IOH High Level Output VIN eVSS
Current (Note 3) VDD e5V, VOe4.6V b0.64 0.51 b0.88 b0.36 mA
VDD e10V, VOe9.5V b1.6 b1.3 b2.25 b0.9 mA
VDD e15V, VOe13.5V b4.2 b3.4 b8.8 b2.4 mA
IIN Input Current VDD e15V, VIN e0V b0.1 b10b5b0.1 b1.0 mA
VDD e15V, VIN e15V 0.1 10b50.1 1.0 mA
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed; they are not meant to imply that the devices
should be operated at these limits. The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: VSS e0V unless otherwise specified.
Note 3: IOH and IOL are tested one output at a time.
2
DC Electrical Characteristics CD4093BC (Note 2)
Symbol Parameter Conditions b40§Ca25§Ca85§CUnits
Min Max Min Typ Max Min Max
IDD Quiescent Device VDD e5V 1.0 1.0 7.5 mA
Current VDD e10V 2.0 2.0 15.0 mA
VDD e15V 4.0 4.0 30.0 mA
VOL Low Level VIN eVDD,
l
IO
l
k1mA
Output Voltage VDD e5V 0.05 0 0.05 0.05 V
VDD e10V 0.05 0 0.05 0.05 V
VDD e15V 0.05 0 0.05 0.05 V
VOH High Level VIN eVSS,
l
IO
l
k1mA
Output Voltage VDD e5V 4.95 4.95 5 4.95 V
VDD e10V 9.95 9.95 10 9.95 V
VDD e15V 14.95 14.95 15 14.95 V
VTbNegative-Going Threshold
l
IO
l
k1mA
Voltage (Any Input) VDD e5V, VOe4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V
VDD e10V, VOe9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V
VDD e15V, VOe13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V
VTaPositive-Going Threshold
l
IO
l
k1mA
Voltage (Any Input) VDD e5V, VOe0.5V 2.75 3.6 2.75 3.3 3.5 2.65 3.5 V
VDD e10V, VOe1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V
VDD e15V, VOe1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V
VHHysteresis (VTabVTb)V
DD e5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V
(Any Input) VDD e10V 1.0 4.3 1.0 2.2 4.0 0.70 4.0 V
VDD e15V 1.5 6.3 1.5 2.7 6.0 1.20 6.0 V
IOL Low Level Output VIN eVDD
Current (Note 3) VDD e5V, VOe0.4V 0.52 0.44 0.88 0.36 mA
VDD e10V, VOe0.5V 1.3 1.1 2.25 0.9 mA
VDD e15V, VOe1.5V 3.6 3.0 8.8 2.4 mA
IOH High Level Output VIN eVSS
Current (Note 3) VDD e5V, VOe4.6V b0.52 0.44 b0.88 b0.36 mA
VDD e10V, VOe9.5V b1.3 b1.1 b2.25 b0.9 mA
VDD e15V, VOe13.5V b3.6 b3.0 b8.8 b2.4 mA
IIN Input Current VDD e15V, VIN e0V b0.3 b10b5b0.3 b1.0 mA
VDD e15V, VIN e15V 0.3 10b50.3 1.0 mA
AC Electrical Characteristics*
TAe25§C, CLe50 pF, RLe200k, Input tr,t
fe20 ns, unless otherwise specified
Symbol Parameter Conditions Min Typ Max Units
tPHL,t
PLH Propagation Delay Time VDD e5V 300 450 ns
VDD e10V 120 210 ns
VDD e15V 80 160 ns
tTHL,t
TLH Transition Time VDD e5V 90 145 ns
VDD e10V 50 75 ns
VDD e15V 40 60 ns
CIN Input Capacitance (Any Input) 5.0 7.5 pF
CPD Power Dissipation Capacitance (Per Gate) 24 pF
*AC Parameters are guaranteed by DC correlated testing.
Note 2: VSS e0V unless otherwise specified.
Note 3: IOH and IOL are tested one output at a time.
3
Typical Applications
Gated Oscillator
TL/F/59822
Assume t1at2ll tPHL atPLH then:
t0eRC n[VDD/VTb]
t1eRC n[(VDD bVTb)/(VDD bVTa)]
t2eRC n[VTa/VTb]
fe1
t1at2
e1
RC n(VTa)(V
DD bVTb)
(VTb)(VDD bVTa)
TL/F/59823
Gated One-Shot
TL/F/59824
TL/F/59825
(a) Negative-Edge Triggered
TL/F/59826
TL/F/59827
(b) Positive-Edge Triggered
4
Typical Performance Characteristics
Typical Transfer
Characteristics
TL/F/59828
Guaranteed Hysteresis vs VDD
TL/F/59829
Guaranteed Trigger Threshold
Voltage vs VDD
TL/F/598210
Guaranteed Hysteresis vs VDD
TL/F/598211
Input and Output Characteristics
TL/F/598212
Output Characteristic Input Characteristic
TL/F/598213
VNML eVIH(MIN) bVOL jVIH(MIN) eVTa(MIN)
VNMH eVOH bVIL(MAX) jVDD bVIL(MAX) eVDD bVTb(MAX)
AC Test Circuits and Switching Time Waveforms
TL/F/598214
TL/F/598215
5
CD4093BM/CD4093BC Quad 2-Input NAND Schmitt Trigger
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4093BMJ or CD4093BCJ
NS Package Number J14A
Molded Dual-In-Line Package (N)
Order Number CD4093BM or CD4093BCN
NS Package Number N14A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: (
a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309
Arlington, TX 76017 Email: cnjwge
@
tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408
Tel: 1(800) 272-9959 Deutsch Tel: (
a
49) 0-180-530 85 85 Tsimshatsui, Kowloon
Fax: 1(800) 737-7018 English Tel: (
a
49) 0-180-532 78 32 Hong Kong
Fran3ais Tel: (
a
49) 0-180-532 93 58 Tel: (852) 2737-1600
Italiano Tel: (
a
49) 0-180-534 16 80 Fax: (852) 2736-9960
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.