BZX55C2V0-
BZX55C75
VB 2007-4
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Power Dissipation
SYMBOL
PD
VALUE UNITS
500 mW
Storage Temperature Range
Note: "Fully RoHS Compliant", "100% Sn Plating (Pb-free)".
Tstg OC
OC
-65to+200
Junction Temperature TJ200
SILICON PLANAR ZENER DIODE
FEATURES
*Zener Voltage Range 2.0 to 75 Volts
*DO-35 Package (JEDEC)
*
*
*
*
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads
are readily solderable
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
DO-35
MAX.
.165 (4.2)
1.02 (26.0)
MIN.
1.02 (26.0)
MIN.
.079 (2.0)
MAX. DIA.
.022 (0.56)
.018 (0.46)DIA.
6001
1.88
2.08
2.28
2.51
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32
35
38
37 41
2.11
2.33 5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
5
5
5
5
5
5
5
5
5
5
5
5
20
26
30
40
50
55
55
80
80
80
80
80
590
100 1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
1
1
1
1
1
1
1
1
1
1
1
1
90
110
110
170
170
220
220
220
220
220
220
220
0.5 500
600 100
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
9.1
10
11
12
13
15
16
18
20
22
24
27
0.1 28
1
1005
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise specified)
MAX MAXMIN
VZT@IZT
IZT
(Volts)
ZZT@IZT
(W)
MAX
ZZT@IZT
(W)
MAX
IR@VR
(uA)
TYPE
100 1
BZX55C2V0
BZX55C2V2
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
(mA)
VR
(Volts) (mA)
IZT
6000.5
40
44
48
52
58
64
70
54
60
66
72
80
46
50 2.5
2.5
2.5
2.5
2.5
2.5
125
135
150
160
170
110 0.5
0.5
0.5
0.5
0.5
0.5
700
1000
1000
1000
1000
700 0.1
0.1
0.1
0.1
0.1
0.1
38
42
47
51
56
35
902.5
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise specified)
MAX MAXMIN
VZT@IZT
IZT
(Volts)
ZZT@IZT
(W)
MAX
ZZT@IZT
(W)
MAX
IR@VR
(uA)
TYPE
0.1 32
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
(mA)
VR
(Volts) (mA)
IZT
I,LEAD LENGTH(mm)
RqJA,THERMAL RESISTANCE JUNCTION TO AMBIENT(K/W)
TA, AMBIENT TEMPERATURE
0 5 10 20
0
100
200
300
400
500
PD, TOTAL POWER DISSIPATION (mW)
0
100
200
300
500
400
1520016012080400
RATING AND CHARACTERISTICS CURVES ( BZX55C2V0-BZX55C75)
Figure1 Power Dissipation vs Ambient Temperature Figure2 Thermal Resistance vs Lead Length
VZ, ZENER VOLTAGE(V)
DIFFERENTIAL ZENER RESISTANCE(W)
VZ, ZENER VOLTAGE(V)
0
1
10
100
1000
CJ,DIODE CAPACITANCE(pF)
0
50
100
150
200
5 1510 20 25
2520151050
Figure3 Diode Capacitance vs Zener Voltage Figure4 Differential Zener Impedance
TJ=25OC
VR=2V T
J
=25OC
I
Z
=1mA
5mA
10mA
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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