© 2016 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 250 V
VDGR TJ= 25C to 150C, RGS = 1M250 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C90 A
IDM TC= 25C, Pulse Width Limited by TJM 360 A
IATC= 25C45 A
EAS TC= 25C3 J
PDTC= 25C 960 W
TJ-55...+150 C
TJM 150 C
Tstg -55...+150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS(th) VDS = VGS, ID = 3mA 2.0 4.5 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 50A
TJ = 125C 2.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 36 m
LinearL2TM
Power MOSFET
w/ Extended FBSOA
IXTK90N25L2
IXTX90N25L2
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 250V
ID25 = 90A
RDS(on) < 36m
DS100080A(4/16)
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Guaranteed FBSOA at 75C
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
Tab
G
DS
TO-264 (IXTK)
S
G
D
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK90N25L2
IXTX90N25L2
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 35 50 65 S
Ciss 23 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2140 pF
Crss 360 pF
td(on) 50 ns
tr 175 ns
td(off) 40 ns
tf 160 ns
Qg(on) 640 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC
Qgd 385 nC
RthJC 0.13 C/W
RthCS 0.15 C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 250V, ID = 2.3A, TC = 75C, Tp = 5s 575 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 90 A
ISM Repetitive, Pulse Width Limited by TJM 360 A
VSD IF = 45A, VGS = 0V, Note 1 1.5 V
trr 266 ns
IRM 23 A
QRM 3.0 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t 300s, duty cycle, d  2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
IF = 45A, -di/dt = 100A/s,
VR = 80V, VGS = 0V
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
© 2016 IXYS CORPORATION, All Rights Reserved
IXTK90N25L2
IXTX90N25L2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5
VDS - Volts
ID - Amperes
V
GS
= 20V
12V
10V
7V
5V
6V
8V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25 30
VDS - Volts
ID - Amperes
V
GS
= 20V
14V
7V
6V
8V
9V
10V
12V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Volts
ID - Amperes
V
GS
= 20V
12V
10V
9V
5V
7V
6V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 45A Value vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
TJ - D egrees Centigr ade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 90A
I
D
= 45A
Fig. 5 . R
DS(on)
No rmalized to I
D
= 45A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 20 40 60 80 100 120 140 160 180 200 220 240
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 12 5ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current v s.
Case Temperature
0
10
20
30
40
50
60
70
80
90
100
-50 -25 0 25 50 75 100 125 150
T
C
- D eg rees Cent igra de
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK90N25L2
IXTX90N25L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGS - Volts
I
D
- Amperes
TJ
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140
ID - Amperes
g
f s
- Siem en s
TJ
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Volta ge Drop of Intrinsic Diode
0
40
80
120
160
200
240
280
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD - Volts
I
S
- Amperes
TJ
= 125ºC
TJ = 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800 900 1000
QG - NanoCoulombs
V
GS
- Volts
VDS
= 125V
I D = 45A
I G = 10m A
Fig. 11. Capa citance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maxim um Transient Therm a l Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Wi dth - Seconds
Z
(th)JC
- K / W
© 2016 IXYS CORPORATION, All Rights Reserved
IXTK90N25L2
IXTX90N25L2
IXYS REF: T_90N25L2(9R)12-01-08
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
1
10
100
1,000
10 100 1000
VDS - Volts
ID - Amperes
T
J
= 1 50º C
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75º C
1
10
100
1,000
10 100 1000
VDS - Volts
ID - Am peres
T
J
= 150 º C
T
C
= 75ºC
Si ngle Pu lse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms
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