KE C SEMICONDUCTOR BCW68 KOREA ELECTRONICS CO.LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. DIM MILLIMETERS A 2.93+0.20 B 1.30+0.20/-0.15 Cc 1.30 MAX 6 D 0.45+0.15/-0.05 MAXIMUM RATINGS (Ta=25T) E | 2.40+0.30/-0.20 G 1.90 CHARACTERISTIC SYMBOL | RATING | UNIT i -aer010/-005 K 0.00 0.10 Collector-Base Voltage Vero -60 V Uf. a i oa MIN [ N 1.00+0.20/-0.10 Collector-Emitter Voltage Vero -45 Vv YL ft 4 ; od out EF Emitter-Base Voltage Vepo -5 Vv 1. EMITTER Collector Current Te -800 mA 2 BASE 3. COLLECTOR Emitter Current I 800 mA Collector Power Dissipation Pe * 350 mW SOT23 Junction Temperature Tj 150 Cc Storage Temperature Range Tstg -55 ~ 150 Cc Pe * : Package mounted on 99.5% alumina 10*8X0.6mm. MARK SPEC Marking TYPE MARK hrz Rank H Lot No. BCW68F DF NL i type Name | [o} 0) BCW68G DG Lt Ld it 1998. 6. 15 Revision No : 1 KEC 1/2 BCW68 ELECTRICAL CHARACTERISTICS (Ta=25'C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.] UNIT Collector-Emitter __ _ _ - _ Breakdown Voltage Voesricco | Ic=-lOmA, Ip=0 45 Vv Emitter-Base Breakdown Voltage Vermeno | Ip=lOuA, Ic=0 -5.0 - - Vv Vies=0V, Vce=-45V - - -20 nA Collector Cut-off Current Icrs Ta=150C, Ven=0V, Vcr=-45V - - ~20 WA Emitter Cut-off Current Trno Tc=0, Ven=-4V - - -20 nA Group F 15 - - Ver=-1V, Ic=-10mA Group G 120 - - Group F 100 - 250 DC Current Gain hrr Vcr=-1V, Ic=-100mA Group G 160 - A400 Group F 35 - - Vor=-1V, Ic=-500mA Group G 60 - - Base-Emitter Ic=-100mA, Ip=-10mA - - -1.25 Saturation Voltage Vistisae Vv Ic=-500mA, In=-50mA - - -2.0 Collector-Emitter Ie="100mA, Is="10mA - - 0.8 Saturation Voltage Vettsat Vv Ic=-500mA, In=-50mA - - -0.7 oo Ic=-80mA, Vep=-10V, _ _ Transition Frequency fr f-100MHz 100 MHz Collector Output Capacitance Cob Vep=-10V, In=0, f=1MHz - - 18 pF Collector Input Capacitance Cip Ven=-0.5V, f=l1MHz - - 80 pF . . Tc=-0.2mA, Vor=-5V, _ Noise Figure NF Re-1kQ, f=1kEz 2.0 10 dB 1998. 6. 15 Revision No : 1 2/2 KEC