1.9
0.950.95
2.9
0.4
1. 3
2. 4
1.0
@vic SOT-23 Plastic-Encapsulate Transistors
MMBT4403LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: -0.6 A
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO I
C= -1mA , IB=0 -40 V
E mitter-b ase break dow n vol t age V(BR)EBO I
E=-100µA, IC=0 -5 V
Collector cut-off current ICBO V
CB=-35V, IE=0 -0.1 µA
Collector cut-off current ICEO V
CE=-35V, IB=0 -0.1 µA
E mitte r cut-off current IEBO V
EB=-4V, IC=0 -0.1 µA
DC current gain hFE VCE=-2V, IC= -150mA 100 300
Collector-emitter saturat ion voltage VCE(sat) I
C=-1 50mA, IB=-15mA -0.4 V
Base-emitter satu ration voltage VBE(sat) I
C=- 150mA, IB=-15mA -0.95 V
Transition fre quency f T VCE= -10V, IC= -20mA
f = 100MHz 200 MHz
DEVICE MARKING MMBT4403LT1=2T
Unit: mm
SOT-23
1. BASE
2. E MITTER
3. COLLECTOR
